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Journal of Electronic Materials (297)
Bibliography

Volkert, C. A., Fitzgerald, E. A., Hull, R., Xie, Y. H., & Mii, Y. J. (1991). Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature. Journal of Electronic Materials, 20(7), 833–837.

Authors 5
  1. C. A. Volkert (first)
  2. E. A. Fitzgerald (additional)
  3. R. Hull (additional)
  4. Y. H. Xie (additional)
  5. Y. J. Mii (additional)
References 17 Referenced 11
  1. There are many papers on this subject, several reviews are: J. H. van der Merwe and C. A. Ball (p. 491) and J. W. Matthews (p. 559), in “Epitaxial Growth,” ed. J. W. Matthews (Academic, NY, 1975); R. Hull and J. C. Bean, in “Semiconductors and Semimetals,” Vol. 33; E. A. Fitzgerald, submitted to Mat. Sci. Rep.
  2. C. Truesdell, “The Elements of Continuum Mechanics,” (Springer-Verlag, NY, 1965). / “The Elements of Continuum Mechanics by C. Truesdell (1965)
  3. W. A. Brantley, J. Appl. Phys.44, 534 (1973). (10.1063/1.1661935) / J. Appl. Phys. by W. A. Brantley (1973)
  4. J. W. Matthews, A. E. Blakeslee and S. Mader, Thin Solid Films33, 253 (1976). (10.1016/0040-6090(76)90085-7) / Thin Solid Films by J. W. Matthews (1976)
  5. L. B. Freund, A. Bower and J. C. Ramirez, MRS Symp. Proa, (1988).
  6. H. Alexander and P. Haasen, in “Solid State Physics” (Academic, NY, 1968), Vol. 22. / Solid State Physics by H. Alexander (1968)
  7. B. W. Dodson and J. Y. Tsao, Appl. Phys. Lett.51,1325 (1987). (10.1063/1.98667) / Appl. Phys. Lett. by B. W. Dodson (1987)
  8. M. Imai and K. Sumino, Philos. Mag. A47, 599 (1983). (10.1080/01418618308245248) / Philos. Mag. A by M. Imai (1983)
  9. J. P. Hirth and J. Lothe, “Theory of Dislocations” (McGraw-Hill, NY, 1968). / Theory of Dislocations by J. P. Hirth (1968)
  10. B. W. Dodson and J. Y. Tsao, Appl. Phys. Lett.53, 2498 (1988). (10.1063/1.100223) / Appl. Phys. Lett. by B. W. Dodson (1988)
  11. W. Hagen and H. Strunk, Appl. Phys.17, 85 (1978); H. Strunk, W. Hagen and E. Bauser, Appl. Phys.18, 67 (1979). (10.1007/BF00885035) / Appl. Phys. by W. Hagen (1978)
  12. R. Hull and J. C. Bean, Appl. Phys. Lett.54, 925 (1989). (10.1063/1.100810) / Appl. Phys. Lett. by R. Hull (1989)
  13. B. W. Dodson, Appl. Phys. Lett.53, 37 (1988). (10.1063/1.100115) / Appl. Phys. Lett. by B. W. Dodson (1988)
  14. Wafers were obtained from Virginia Semiconductor, Inc., Po-whatan, VA.
  15. C. A. Volkert, to be published in J. Appl. Phys.
  16. J. W. Christian, “The Theory of Transformations in Metals and Alloys,” (Pergamon, Oxford, 1975). / The Theory of Transformations in Metals and Alloys by J. W. Christian (1975)
  17. Y. Beers, “Theory of Error,” (Addison-Wesley, MA, 1953). / Theory of Error by Y. Beers (1953)
Dates
Type When
Created 18 years, 1 month ago (July 16, 2007, 5:52 p.m.)
Deposited 6 years, 3 months ago (May 20, 2019, 9:36 p.m.)
Indexed 1 year, 7 months ago (Feb. 3, 2024, 2:08 p.m.)
Issued 34 years, 2 months ago (July 1, 1991)
Published 34 years, 2 months ago (July 1, 1991)
Published Print 34 years, 2 months ago (July 1, 1991)
Funders 0

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@article{Volkert_1991, title={Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature}, volume={20}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/bf02665972}, DOI={10.1007/bf02665972}, number={7}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Volkert, C. A. and Fitzgerald, E. A. and Hull, R. and Xie, Y. H. and Mii, Y. J.}, year={1991}, month=jul, pages={833–837} }