DOI: 10.1007/bf02660375. Effect of electron trapping on IGFET characteristics

Effect of electron trapping on IGFET characteristics

10.1007/bf02660375

Crossref journal-article

Springer Science and Business Media LLC

Journal of Electronic Materials (297)

Bibliography

Ning, T. H., Osburn, C. M., & Yu, H. N. (1977). Effect of electron trapping on IGFET characteristics. Journal of Electronic Materials, 6(2), 65â76.

Authors 3

T. H. Ning (first)
C. M. Osburn (additional)
H. N. Yu (additional)

References 16 Referenced 74

H. Hara, Y. Okamoto, and H. Ohnuma, Jpn. J. Appl. Phys.9, 1103 (1970). (10.1143/JJAP.9.1103) / Jpn. J. Appl. Phys. by H. Hara (1970)
M. Pepper, J. Phys. D6, 2124 (1973). (10.1088/0022-3727/6/17/319) / J. Phys. D by M. Pepper (1973)
J. F. Verwey and B. J. de Maagt, Solid-State Electron.17, 963 (1974). (10.1016/0038-1101(74)90048-3) / Solid-State Electron by J. F. Verwey (1974)
C. Bulucea, Solid-State Electron.18, 363 (1975). (10.1016/0038-1101(75)90092-1) / Solid-State Electron by C. Bulucea (1975)
C. Bulucea, Solid-State Electron.18., 381 (1975). (10.1016/0038-1101(75)90039-8) / Solid-State Electron by C. Bulucea (1975)
D. M. Erb, H. G. Dill, and T. N. Toombs, IEEE Trans. Electron DevicesED-18, 105 (1971). (10.1109/T-ED.1971.17157) / IEEE Trans. Electron Devices by D. M. Erb (1971)
S. A. Abbas and R. C. Dockerty, Appl. Phys. Lett.27, 147 (1975). (10.1063/1.88387) / Appl. Phys. Lett. by S. A. Abbas (1975)
T. H. Ning, C. M. Osburn, and H. N. Yu, Appl. Phys. Lett.29, 198 (1976). (10.1063/1.88991) / Appl. Phys. Lett. by T. H. Ning (1976)
P. C. Arnett and B. H. Yun, Appl. Phys. Lett.26, 94 (1975). (10.1063/1.88093) / Appl. Phys. Lett. by P. C. Arnett (1975)
E. H. Nicollian, A. Goetzberger, and C. N. Berglund, Appl. Phys. Lett.15, 174 (1969). (10.1063/1.1652955) / Appl. Phys. Lett. by E. H. Nicollian (1969)
E. H. Nicollian, C. N. Berglund, P. F. Schmidt, and J. M. Andrews, J. Appl. Phys.42, 5654 (1971). (10.1063/1.1659996) / J. Appl. Phys. by E. H. Nicollian (1971)
R. A. Gdula, J. Electrochem. Soc.123, 42 (1976). (10.1149/1.2132762) / J. Electrochem. Soc. by R. A. Gdula (1976)
D. R. Young and E. A. Irene (unpublished).
T. H. Ning, C. M. Osburn, and H. N. Yu, Appl. Phys. Lett.26, 248 (1975). (10.1063/1.88138) / Appl. Phys. Lett. by T. H. Ning (1975)
T. H. Ning, J. Appl. Phys.47, 3203 (1976). (10.1063/1.323116) / J. Appl. Phys. by T. H. Ning (1976)
T. H. Ning and H. N. Yu, J. Appl. Phys.45, 5373 (1974). (10.1063/1.1663246) / J. Appl. Phys. by T. H. Ning (1974)

Dates

Type	When
Created	18 years, 1 month ago (July 16, 2007, 1:22 p.m.)
Deposited	6 years, 3 months ago (May 20, 2019, 5:24 p.m.)
Indexed	1 month, 1 week ago (July 27, 2025, 3:16 a.m.)
Issued	48 years, 6 months ago (March 1, 1977)
Published	48 years, 6 months ago (March 1, 1977)
Published Print	48 years, 6 months ago (March 1, 1977)

Funders 0

None

BibTeX

@article{Ning_1977, title={Effect of electron trapping on IGFET characteristics}, volume={6}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/bf02660375}, DOI={10.1007/bf02660375}, number={2}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Ning, T. H. and Osburn, C. M. and Yu, H. N.}, year={1977}, month=mar, pages={65–76} }

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