DOI: 10.1007/bf02659681. The effects of N+ dose in implantation into 6h-sic epilayers

The effects of N+ dose in implantation into 6h-sic epilayers

10.1007/bf02659681

Crossref journal-article

Springer Science and Business Media LLC

Journal of Electronic Materials (297)

Bibliography

Kimoto, T., Itoh, A., Matsunami, H., Nakata, T., & Watanabe, M. (1995). The effects of N+ dose in implantation into 6h-sic epilayers. Journal of Electronic Materials, 24(4), 235â240.

Authors 5

Tsunenobu Kimoto (first)
Akira Itoh (additional)
Hiroyuki Matsunami (additional)
Toshitake Nakata (additional)
Masanori Watanabe (additional)

References 24 Referenced 70

Silicon Carbide and Related Materials, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan and M.M. Rahman, (London: Institute of Physics, 1994).
Yu.M. Tairov and V.F. Tsvetkov,J. Cryst. Growth 52, 146 (1981). (10.1016/0022-0248(81)90184-6) / J. Cryst. Growth by Yu.M. Tairov (1981)
N. Kuroda, K. Shibahara, W.S. Yoo, S. Nishino and H. Matsunami,Ext. Abstr. 19th Conf. on Solid State Devices and Materials, Tokyo (Tokyo: Business Center for Academic Soci- eties Japan, 1987), p. 227. / Ext. Abstr. 19th Conf. on Solid State Devices and Materials by N. Kuroda (1987)
H.S. Kong, J.T. Glass and R.F. Davis,J. Appl. Phys. 64,2672 (1988). (10.1063/1.341608) / J. Appl. Phys. by H.S. Kong (1988)
J.W. Palmour, J.A. Edmond, H.S. Kong and C.H. Carter, Jr.,Physica B 185, 461 (1993). (10.1016/0921-4526(93)90278-E) / Physica B by J.W. Palmour (1993)
H.M. Hobgood, D.L. Barrett, J.P. McHugh, R.C. Clarke, S. Sriram, A.A. Burk, J. Greggi, CD. Brandt, R.H. Hopkins and W.J. Choyke,J. Cryst. Growth 137, 181 (1994). (10.1016/0022-0248(94)91269-6) / J. Cryst. Growth by H.M. Hobgood (1994)
D.M. Brown, E.T. Downey, M. Ghezzo, J.W. Kretchmer, R.J. Saia, Y.S. Liu, J.A. Edmond, G. Gati, J.M. Pimbley and W.E. Schneider,IEEE Trans. Electron Devices ED-40, 325 (1993). (10.1109/16.182509) / IEEE Trans. Electron Devices by D.M. Brown (1993)
W. Xie, J.A. Cooper, Jr., M.R. Melloch, J.W. Palmour and C.H. Carter, Jr.,IEEE Electron Device Lett. 15, 212 (1994). (10.1109/55.286695) / IEEE Electron Device Lett. by W. Xie (1994)
T. Ouisse, N. Becourt, C. Jaussaud and F. Templier,J. Appl. Phys. 75,604(1994). (10.1063/1.355846) / J. Appl. Phys. by T. Ouisse (1994)
P. Neudeck, S. Kang, J. Petit and M. Tabib-Azar,J. Appl. Phys. 75, 7949 (1994). (10.1063/1.356583) / J. Appl. Phys. by P. Neudeck (1994)
O.J. Marsh,Silicon Carbide 1973, eds. R.C. Marshall, J.W. Faust, Jr. and CE. Ryan, (University of South Carolina Press, 1974), p. 471.
H.G. Bohn, J.M. Williams, C.J. McHargue and G.M. Begun,J. Mat. Res. 2, 107 (1987). (10.1557/JMR.1987.0107) / J. Mat. Res. by H.G. Bohn (1987)
J.A. Edmond, K. Das and R.F. Davis,J. Appl. Phys. 63, 922 (1988). (10.1063/1.340034) / J. Appl. Phys. by J.A. Edmond (1988)
K. Shibahara, T. Takeuchi, S. Nishino and H. Matsunami,Jpn. J. Appl. Phys. 28, 1341 (1989). (10.1143/JJAP.28.1341) / Jpn. J. Appl. Phys. by K. Shibahara (1989)
G. Pensl, R. Helbig, H. Zhang, G. Ziegler and P. Lanig,Mat. Res. Soc. Symp. Proc. 97, 195 (1987). (10.1557/PROC-97-195) / Mat. Res. Soc. Symp. Proc. by G. Pensl (1987)
M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla and H. Bakhru,IEEE Electron Device Lett. 12,639(1992). (10.1109/55.192870) / IEEE Electron Device Lett. by M. Ghezzo (1992)
S. Yaguchi, N. Ohyama, S. Kobayashi, T. Kimoto and H. Matsunami, to be submitted.
L.T. Kroko and A.G. Milnes,Solid State Electron. 9, 1129 (1966). (10.1016/0038-1101(66)90137-7) / Solid State Electron. by L.T. Kroko (1966)
D.W. Feldman, J.H. Parker, Jr., W.J. Choyke and L. Patrick,Phys. Rev. 170, 698 (1968). (10.1103/PhysRev.170.698) / Phys. Rev. by D.W. Feldman (1968)
J.F. Morhange, R. Beserman and M. Balkanski,Phys. Status Solidi (a) 23, 383(1974). (10.1002/pssa.2210230206) / Phys. Status Solidi by J.F. Morhange (1974)
S. Nakashima and M. Hangyo,IEEE J. Quantum Electron. 25, 965 (1989). (10.1109/3.27987) / IEEE J. Quantum Electron. by S. Nakashima (1989)
H. Ryssel and I. Ruge,Ion Implantation, (John Wiley & Sons, 1986).
Yu.A. Vodakov and E.N. Mokhov,Silicon Carbide 1973, eds. R.C. Marshall, J.W. Faust, Jr. and C.E. Ryan, (University of South Carolina Press, 1974), p. 508.
W. Suttrop, G. Pensl, W. J. Choyke, R. Stein and S. Leibenzeder,J. Appl. Phys. 72, 3708 (1992). (10.1063/1.352318) / J. Appl. Phys. by W. Suttrop (1992)

Dates

Type	When
Created	18 years, 1 month ago (July 16, 2007, 4:41 p.m.)
Deposited	6 years, 3 months ago (May 20, 2019, 9:24 p.m.)
Indexed	4 months, 2 weeks ago (April 11, 2025, 1:47 a.m.)
Issued	30 years, 4 months ago (April 1, 1995)
Published	30 years, 4 months ago (April 1, 1995)
Published Print	30 years, 4 months ago (April 1, 1995)

Funders 0

None

BibTeX

@article{Kimoto_1995, title={The effects of N+ dose in implantation into 6h-sic epilayers}, volume={24}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/bf02659681}, DOI={10.1007/bf02659681}, number={4}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Kimoto, Tsunenobu and Itoh, Akira and Matsunami, Hiroyuki and Nakata, Toshitake and Watanabe, Masanori}, year={1995}, month=apr, pages={235–240} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        11
      ]
    ],
    "date-time": "2025-04-11T05:47:34Z",
    "timestamp": 1744350454184
  },
  "reference-count": 24,
  "publisher": "Springer Science and Business Media LLC",
  "issue": "4",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1995,
            4,
            1
          ]
        ],
        "date-time": "1995-04-01T00:00:00Z",
        "timestamp": 796694400000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "http://www.springer.com/tdm"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1995,
        4
      ]
    ]
  },
  "DOI": "10.1007/bf02659681",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        7,
        16
      ]
    ],
    "date-time": "2007-07-16T20:41:30Z",
    "timestamp": 1184618490000
  },
  "page": "235-240",
  "source": "Crossref",
  "is-referenced-by-count": 70,
  "title": "The effects of N+ dose in implantation into 6h-sic epilayers",
  "prefix": "10.1007",
  "volume": "24",
  "author": [
    {
      "given": "Tsunenobu",
      "family": "Kimoto",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Akira",
      "family": "Itoh",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Hiroyuki",
      "family": "Matsunami",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Toshitake",
      "family": "Nakata",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Masanori",
      "family": "Watanabe",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "297",
  "reference": [
    {
      "key": "BF02659681_CR1",
      "unstructured": "Silicon Carbide and Related Materials, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan and M.M. Rahman, (London: Institute of Physics, 1994)."
    },
    {
      "key": "BF02659681_CR2",
      "doi-asserted-by": "crossref",
      "first-page": "146",
      "DOI": "10.1016/0022-0248(81)90184-6",
      "volume": "52",
      "author": "Yu.M. Tairov",
      "year": "1981",
      "unstructured": "Yu.M. Tairov and V.F. Tsvetkov,J. Cryst. Growth 52, 146 (1981).",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "BF02659681_CR3",
      "first-page": "227",
      "volume-title": "Ext. Abstr. 19th Conf. on Solid State Devices and Materials",
      "author": "N. Kuroda",
      "year": "1987",
      "unstructured": "N. Kuroda, K. Shibahara, W.S. Yoo, S. Nishino and H. Matsunami,Ext. Abstr. 19th Conf. on Solid State Devices and Materials, Tokyo (Tokyo: Business Center for Academic Soci- eties Japan, 1987), p. 227."
    },
    {
      "key": "BF02659681_CR4",
      "doi-asserted-by": "crossref",
      "first-page": "2672",
      "DOI": "10.1063/1.341608",
      "volume": "64",
      "author": "H.S. Kong",
      "year": "1988",
      "unstructured": "H.S. Kong, J.T. Glass and R.F. Davis,J. Appl. Phys. 64,2672 (1988).",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "BF02659681_CR5",
      "doi-asserted-by": "crossref",
      "first-page": "461",
      "DOI": "10.1016/0921-4526(93)90278-E",
      "volume": "185",
      "author": "J.W. Palmour",
      "year": "1993",
      "unstructured": "J.W. Palmour, J.A. Edmond, H.S. Kong and C.H. Carter, Jr.,Physica B 185, 461 (1993).",
      "journal-title": "Physica B"
    },
    {
      "key": "BF02659681_CR6",
      "doi-asserted-by": "crossref",
      "first-page": "181",
      "DOI": "10.1016/0022-0248(94)91269-6",
      "volume": "137",
      "author": "H.M. Hobgood",
      "year": "1994",
      "unstructured": "H.M. Hobgood, D.L. Barrett, J.P. McHugh, R.C. Clarke, S. Sriram, A.A. Burk, J. Greggi, CD. Brandt, R.H. Hopkins and W.J. Choyke,J. Cryst. Growth 137, 181 (1994).",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "BF02659681_CR7",
      "doi-asserted-by": "crossref",
      "first-page": "325",
      "DOI": "10.1109/16.182509",
      "volume": "ED-40",
      "author": "D.M. Brown",
      "year": "1993",
      "unstructured": "D.M. Brown, E.T. Downey, M. Ghezzo, J.W. Kretchmer, R.J. Saia, Y.S. Liu, J.A. Edmond, G. Gati, J.M. Pimbley and W.E. Schneider,IEEE Trans. Electron Devices ED-40, 325 (1993).",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "BF02659681_CR8",
      "doi-asserted-by": "crossref",
      "first-page": "212",
      "DOI": "10.1109/55.286695",
      "volume": "15",
      "author": "W. Xie",
      "year": "1994",
      "unstructured": "W. Xie, J.A. Cooper, Jr., M.R. Melloch, J.W. Palmour and C.H. Carter, Jr.,IEEE Electron Device Lett. 15, 212 (1994).",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "BF02659681_CR9",
      "doi-asserted-by": "crossref",
      "first-page": "604",
      "DOI": "10.1063/1.355846",
      "volume": "75",
      "author": "T. Ouisse",
      "year": "1994",
      "unstructured": "T. Ouisse, N. Becourt, C. Jaussaud and F. Templier,J. Appl. Phys. 75,604(1994).",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "BF02659681_CR10",
      "doi-asserted-by": "crossref",
      "first-page": "7949",
      "DOI": "10.1063/1.356583",
      "volume": "75",
      "author": "P. Neudeck",
      "year": "1994",
      "unstructured": "P. Neudeck, S. Kang, J. Petit and M. Tabib-Azar,J. Appl. Phys. 75, 7949 (1994).",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "BF02659681_CR11",
      "unstructured": "O.J. Marsh,Silicon Carbide 1973, eds. R.C. Marshall, J.W. Faust, Jr. and CE. Ryan, (University of South Carolina Press, 1974), p. 471."
    },
    {
      "key": "BF02659681_CR12",
      "doi-asserted-by": "crossref",
      "first-page": "107",
      "DOI": "10.1557/JMR.1987.0107",
      "volume": "2",
      "author": "H.G. Bohn",
      "year": "1987",
      "unstructured": "H.G. Bohn, J.M. Williams, C.J. McHargue and G.M. Begun,J. Mat. Res. 2, 107 (1987).",
      "journal-title": "J. Mat. Res."
    },
    {
      "key": "BF02659681_CR13",
      "doi-asserted-by": "crossref",
      "first-page": "922",
      "DOI": "10.1063/1.340034",
      "volume": "63",
      "author": "J.A. Edmond",
      "year": "1988",
      "unstructured": "J.A. Edmond, K. Das and R.F. Davis,J. Appl. Phys. 63, 922 (1988).",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "BF02659681_CR14",
      "doi-asserted-by": "crossref",
      "first-page": "1341",
      "DOI": "10.1143/JJAP.28.1341",
      "volume": "28",
      "author": "K. Shibahara",
      "year": "1989",
      "unstructured": "K. Shibahara, T. Takeuchi, S. Nishino and H. Matsunami,Jpn. J. Appl. Phys. 28, 1341 (1989).",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "BF02659681_CR15",
      "doi-asserted-by": "crossref",
      "first-page": "195",
      "DOI": "10.1557/PROC-97-195",
      "volume": "97",
      "author": "G. Pensl",
      "year": "1987",
      "unstructured": "G. Pensl, R. Helbig, H. Zhang, G. Ziegler and P. Lanig,Mat. Res. Soc. Symp. Proc. 97, 195 (1987).",
      "journal-title": "Mat. Res. Soc. Symp. Proc."
    },
    {
      "key": "BF02659681_CR16",
      "doi-asserted-by": "crossref",
      "first-page": "639",
      "DOI": "10.1109/55.192870",
      "volume": "12",
      "author": "M. Ghezzo",
      "year": "1992",
      "unstructured": "M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla and H. Bakhru,IEEE Electron Device Lett. 12,639(1992).",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "BF02659681_CR17",
      "unstructured": "S. Yaguchi, N. Ohyama, S. Kobayashi, T. Kimoto and H. Matsunami, to be submitted."
    },
    {
      "key": "BF02659681_CR18",
      "doi-asserted-by": "crossref",
      "first-page": "1129",
      "DOI": "10.1016/0038-1101(66)90137-7",
      "volume": "9",
      "author": "L.T. Kroko",
      "year": "1966",
      "unstructured": "L.T. Kroko and A.G. Milnes,Solid State Electron. 9, 1129 (1966).",
      "journal-title": "Solid State Electron."
    },
    {
      "key": "BF02659681_CR19",
      "doi-asserted-by": "crossref",
      "first-page": "698",
      "DOI": "10.1103/PhysRev.170.698",
      "volume": "170",
      "author": "D.W. Feldman",
      "year": "1968",
      "unstructured": "D.W. Feldman, J.H. Parker, Jr., W.J. Choyke and L. Patrick,Phys. Rev. 170, 698 (1968).",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "BF02659681_CR20",
      "doi-asserted-by": "crossref",
      "first-page": "383",
      "DOI": "10.1002/pssa.2210230206",
      "volume": "23",
      "author": "J.F. Morhange",
      "year": "1974",
      "unstructured": "J.F. Morhange, R. Beserman and M. Balkanski,Phys. Status Solidi (a) 23, 383(1974).",
      "journal-title": "Phys. Status Solidi"
    },
    {
      "key": "BF02659681_CR21",
      "doi-asserted-by": "crossref",
      "first-page": "965",
      "DOI": "10.1109/3.27987",
      "volume": "25",
      "author": "S. Nakashima",
      "year": "1989",
      "unstructured": "S. Nakashima and M. Hangyo,IEEE J. Quantum Electron. 25, 965 (1989).",
      "journal-title": "IEEE J. Quantum Electron."
    },
    {
      "key": "BF02659681_CR22",
      "unstructured": "H. Ryssel and I. Ruge,Ion Implantation, (John Wiley & Sons, 1986)."
    },
    {
      "key": "BF02659681_CR23",
      "unstructured": "Yu.A. Vodakov and E.N. Mokhov,Silicon Carbide 1973, eds. R.C. Marshall, J.W. Faust, Jr. and C.E. Ryan, (University of South Carolina Press, 1974), p. 508."
    },
    {
      "key": "BF02659681_CR24",
      "doi-asserted-by": "crossref",
      "first-page": "3708",
      "DOI": "10.1063/1.352318",
      "volume": "72",
      "author": "W. Suttrop",
      "year": "1992",
      "unstructured": "W. Suttrop, G. Pensl, W. J. Choyke, R. Stein and S. Leibenzeder,J. Appl. Phys. 72, 3708 (1992).",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Journal of Electronic Materials",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "http://link.springer.com/content/pdf/10.1007/BF02659681.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "http://link.springer.com/article/10.1007/BF02659681/fulltext.html",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "http://link.springer.com/content/pdf/10.1007/BF02659681",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2019,
        5,
        21
      ]
    ],
    "date-time": "2019-05-21T01:24:13Z",
    "timestamp": 1558401853000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1007/BF02659681"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1995,
        4
      ]
    ]
  },
  "references-count": 24,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          1995,
          4
        ]
      ]
    }
  },
  "alternative-id": [
    "BF02659681"
  ],
  "URL": "http://dx.doi.org/10.1007/BF02659681",
  "relation": {},
  "ISSN": [
    "0361-5235",
    "1543-186X"
  ],
  "subject": [],
  "container-title-short": "JEM",
  "published": {
    "date-parts": [
      [
        1995,
        4
      ]
    ]
  }
}