DOI: 10.1007/bf02652949. Properties of Ge-doped GaAs and Alx Ga1−xAs, Sn-doped Alx Ga1−xAs and Si-Te-doped GaAs

Properties of Ge-doped GaAs and Alx Ga1−xAs, Sn-doped Alx Ga1−xAs and Si-Te-doped GaAs

10.1007/bf02652949

Crossref journal-article

Springer Science and Business Media LLC

Journal of Electronic Materials (297)

Bibliography

Shih, K. K., & Pettit, G. D. (1974). Properties of Ge-doped GaAs and Alx Ga1âxAs, Sn-doped Alx Ga1âxAs and Si-Te-doped GaAs. Journal of Electronic Materials, 3(2), 391â408.

Authors 2

K. K. Shih (first)
G. D. Pettit (additional)

References 25 Referenced 30

I. Hayashi, M. B. Panish, P. W. Foy and S. Sumski, Appl. Phys. Letters17, 109 (1970). (10.1063/1.1653326) / Appl. Phys. Letters by I. Hayashi (1970)
Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Yu. V. Zhilyaev, E. P. Morozov, E. L. Portnoi and V. G. Trofim, Sov. Phys. -Semicon.4, 1573 (1971). / Sov. Phys. -Semicon. by Zh. I. Alferov (1971)
H. Kressel, H. F. Lockwood and F. Z. Hawrylo, J. Appl. Phys.43, 561 (1972). (10.1063/1.1661156) / J. Appl. Phys. by H. Kressel (1972)
F. E. Rosztoczy, F. Ermanis, I. Hayashi and B. Schwartz, J. Appl. Phys.41, 264 (1970). (10.1063/1.1658332) / J. Appl. Phys. by F. E. Rosztoczy (1970)
C. Constantinesn and Petresn-Prahova, J. Phys. Chem. Solids28, 2397 (1967). (10.1016/0022-3697(67)90025-X) / J. Phys. Chem. Solids by C. Constantinesn (1967)
J. Vilms and J. P. Garrett, Solid State Electron.15, 443 (1972). (10.1016/0038-1101(72)90115-3) / Solid State Electron. by J. Vilms (1972)
H. Kressel, F. Z. Hawrylo and P. LeFur, J. Appl. Phys.39, 4059 (1968). (10.1063/1.1656924) / J. Appl. Phys. by H. Kressel (1968)
Zh. I. Alferov, D. Z. Garbuzov, O. A. Niune and V. G. Trofim, Sov. Phys. -Semicon.6, 987 (1971). / Sov. Phys. -Semicon. by Zh. I. Alferov (1971)
K. Sugiyame and H. Saito, Japan J. Appl. Phys.10, 395 (1971). (10.1143/JJAP.10.395) / Japan J. Appl. Phys. by K. Sugiyame (1971)
M. B. Panish, J. Appl. Phys.44, 2667 (1973). (10.1063/1.1662631) / J. Appl. Phys. by M. B. Panish (1973)
K. Sugiyame and T. Kawakami, Japan J. Appl. Phys.8, 1007 (1971). (10.1143/JJAP.10.1007) / Japan J. Appl. Phys. by K. Sugiyame (1971)
H. Rupprecht, J. M. Woodall, K. Konnerth and D. G. Pettit, Appl. Phys. Letters9, 221 (1966). (10.1063/1.1754721) / Appl. Phys. Letters by H. Rupprecht (1966)
W. G. Spitzer and M. B. Panish, J. Appl. Phys.40, 4200 (1969). (10.1063/1.1657165) / J. Appl. Phys. by W. G. Spitzer (1969)
W. G. Spitzer and W. Alfred, Appl. Phys. Letters,12, 5 (1968). (10.1063/1.1651837) / Appl. Phys. Letters by W. G. Spitzer (1968)
H. Kressel, J. U. Dunse, H. Nelson and F. Z. Hawrylo, J. Appl. Phys.39, 2006 (1968). (10.1063/1.1656480) / J. Appl. Phys. by H. Kressel (1968)
F. E. Rosztoczy, J. Electrochem. Soc.115, 244c (1966). / J. Electrochem. Soc. by F. E. Rosztoczy (1966)
B. H. Ahn, R. R. Shurtz and C. W. Trussell, J. Appl. Phys.42, 4512 (1971). (10.1063/1.1659807) / J. Appl. Phys. by B. H. Ahn (1971)
F. Stern, J. Quantum Electron.QE-9, 290 (1973). (10.1109/JQE.1973.1077478) / J. Quantum Electron. by F. Stern (1973)
J. M. Blum and K. K. Shih, J. Appl. Phys.43, 1939 (1972). (10.1063/1.1661330) / J. Appl. Phys. by J. M. Blum (1972)
M. I. Nathan and G. Burns, Phys. Rev.129, 125 (1963). (10.1103/PhysRev.129.125) / Phys. Rev. by M. I. Nathan (1963)
D. A. Cusano, Solid State Comm.2, 353 (1964). (10.1016/0038-1098(64)90259-5) / Solid State Comm. by D. A. Cusano (1964)
J. S. Harris and W. L. Snyder, Solid State Electron.12, 37 (1969). (10.1016/0038-1101(69)90088-4) / Solid State Electron. by J. S. Harris (1969)
M. B. Panish, J. Appl. Phys.44, 2659 (1973). (10.1063/1.1662630) / J. Appl. Phys. by M. B. Panish (1973)
H. Kressel, H. Nelson and F. Z. Hawrylo, J. Appl. Phys.39, 5647 (1968). (10.1063/1.1656028) / J. Appl. Phys. by H. Kressel (1968)
J. Nishizawa, S. Shinozaki and K. Ishida, J. Appl. Phys.44, 1638 (1973). (10.1063/1.1662424) / J. Appl. Phys. by J. Nishizawa (1973)

Dates

Type	When
Created	18 years, 1 month ago (July 6, 2007, 4:01 a.m.)
Deposited	3 years, 3 months ago (May 15, 2022, 11:27 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 12:04 p.m.)
Issued	51 years, 3 months ago (May 1, 1974)
Published	51 years, 3 months ago (May 1, 1974)
Published Print	51 years, 3 months ago (May 1, 1974)

Funders 0

None

BibTeX

@article{Shih_1974, title={Properties of Ge-doped GaAs and Alx Ga1‚àíxAs, Sn-doped Alx Ga1‚àíxAs and Si-Te-doped GaAs}, volume={3}, ISSN={1543-186X}, url={http://dx.doi.org/10.1007/bf02652949}, DOI={10.1007/bf02652949}, number={2}, journal={Journal of Electronic Materials}, publisher={Springer Science and Business Media LLC}, author={Shih, K. K. and Pettit, G. D.}, year={1974}, month=may, pages={391‚Äì408} }

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