DOI: 10.1007/978-3-642-74751-9_7. Resonant Tunnelling and Superlattice Devices: Physics and Circuits

Resonant Tunnelling and Superlattice Devices: Physics and Circuits

10.1007/978-3-642-74751-9_7

Crossref book-chapter

Springer Berlin Heidelberg

Springer Series in Electronics and Photonics (297)

Bibliography

Capasso, F., Sen, S., Beltram, F., & Cho, A. Y. (1990). Resonant Tunnelling and Superlattice Devices: Physics and Circuits. Physics of Quantum Electron Devices, 181â252.

Authors 4

F. Capasso (first)
S. Sen (additional)
F. Beltram (additional)
A. Y. Cho (additional)

References 99 Referenced 18

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It should be noted that while the exposed portion of the channel is depleted, the portion under the emitter is not. This follows unambiguously from the identification of the current peaks with resonant tunnelling. At the bias conditions corresponding to the resonances in the range Vo 0, the field drop associated with charge in the quantum well is always 2 x 105 V/cm corresponding to n Z, 2 x 1012 cm-2.

Dates

Type	When
Created	13 years, 9 months ago (Nov. 24, 2011, 12:18 p.m.)
Deposited	4 years, 9 months ago (Nov. 24, 2020, 9:39 p.m.)
Indexed	4 months, 3 weeks ago (April 4, 2025, 5:24 p.m.)
Issued	35 years, 7 months ago (Jan. 1, 1990)
Published	35 years, 7 months ago (Jan. 1, 1990)
Published Print	35 years, 7 months ago (Jan. 1, 1990)

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BibTeX

@inbook{Capasso_1990, title={Resonant Tunnelling and Superlattice Devices: Physics and Circuits}, ISBN={9783642747519}, ISSN={0172-5734}, url={http://dx.doi.org/10.1007/978-3-642-74751-9_7}, DOI={10.1007/978-3-642-74751-9_7}, booktitle={Physics of Quantum Electron Devices}, publisher={Springer Berlin Heidelberg}, author={Capasso, F. and Sen, S. and Beltram, F. and Cho, A. Y.}, year={1990}, pages={181–252} }

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    },
    {
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    {
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      "volume-title": "Resonant Tunnelling Device with Multiple Negative Differential Resistance",
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    },
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      "year": "1987",
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    {
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      "unstructured": "M. Jonson, A. Grincwajg: \u201cEffect of Inelastic Scattering on Resonant and Sequential Tunnelling in Double Barrier Heterostructures\u201d, Appl. Phys. Lett., 1729, 51 (1987)",
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      "year": "1988",
      "unstructured": "S. Luryi: \u201cCoherent Versus Incoherent Resonant Tunnelling and Implications for Fast Devices\u201d, to appear in Superlattices and Microstructures (1988)"
    },
    {
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      "journal-title": "Phys. Rev. Lett."
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    {
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      "journal-title": "Phys. Rev. Lett."
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    {
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    },
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      "journal-title": "Appl. Phys. Lett."
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    {
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    },
    {
      "key": "7_CR53",
      "volume-title": "MA (20-24 July",
      "author": "N Yokoyama",
      "year": "1987",
      "unstructured": "N. Yokoyama, K. Imamura, H. Ohnishi, T. Mori, S. Muto, A. Shibatomi: \u201cResonant Tunnelling Hot Electron Transistor (RHET)\u201d, 5th Int. Conf. on Hot Carriers in Semiconductors, Boston, MA (20\u201324 July, 1987 )"
    },
    {
      "key": "7_CR54",
      "first-page": "174",
      "volume": "131",
      "author": "AC Gossard",
      "year": "1986",
      "unstructured": "A. C. Gossard, R. C. Miller, W. Wiegmann: \u201cMBE Growth and Energy Levels of Quantum Wells with Special Shapes\u201d, Surf. Sci., 131, 174 (1986)",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "7_CR55",
      "unstructured": "Recent systematic studies in [7.10] have shown that electron RT through GaAs/Al\u201eGa1 \u201eAs diodes with thin barriers (30 A) is dominated by the barrier height at the I\u2019 point also in the indirect gap region (0.45 x 1)"
    },
    {
      "key": "7_CR56",
      "first-page": "58",
      "volume": "816",
      "author": "M Heiblum",
      "year": "1987",
      "unstructured": "M. Heiblum, M. V. Fischetti, W. P. Dumke, D. J. Frank, I. M. Anderson, C. M. Knoedler, L. Osterling: \u201cElectron Interference Effects in Quantum Wells: Observation of Bound and Resonant States\u201d, Phys. Rev. Lett., 816, 58 (1987)",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "7_CR57",
      "first-page": "539",
      "volume-title": "Gallium Arsenide and Related Compounds 1986",
      "author": "F Capasso",
      "year": "1986",
      "unstructured": "F. Capasso, S. Sen, A. Y. Cho, A. L. Hutchinson: \u201cHot Electron Resonant Tunnelling Through a Quantum Well: A New Electron Spectroscopy\u201d, in Gallium Arsenide and Related Compounds 1986, 539 (1986)"
    },
    {
      "key": "7_CR58",
      "first-page": "23",
      "volume": "28",
      "author": "F Capasso",
      "year": "1987",
      "unstructured": "F. Capasso, S. Sen, A. Y. Cho, A. L. Hutchinson: \u201cResonant Tunnelling Electron Spectroscopy\u201d, Electron. Lett., 28, 23 (1987)",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "7_CR59",
      "first-page": "50",
      "volume": "930",
      "author": "F Capasso",
      "year": "1987",
      "unstructured": "F. Capasso, S. Sen, A. Y. Cho, A. L. Hutchinson: \u201cResdnant Tunnelling Spectroscopy of Hot Minority Electrons Injected in Gallium Arsenide Quantum Wells\u201d, Appl. Phys. Lett., 930, 50 (1987)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR60",
      "first-page": "20",
      "volume": "851",
      "author": "JR Hayes",
      "year": "1984",
      "unstructured": "J. R. Hayes, A. F. J. Levi, W. Wiegmann: \u201cHot Electron Spectroscopy\u201d, Electron. Lett., 851, 20 (1984)",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "7_CR61",
      "first-page": "9",
      "volume-title": "IEEE International Electron Device Meeting Technical Digest, 532, IEDM-84, San Francisco, CA (Dec",
      "author": "N Yokoyama",
      "year": "1984",
      "unstructured": "N. Yokoyama, K. Imamura, T. Oshima, H. Nishi, S. Muto, K. Kondo, S. Hiyamizu: \u201cCharacterization of Double Heterojunction GaAs/A1GaAs Hot Electron Transistor\u201d in IEEE International Electron Device Meeting Technical Digest, 532, IEDM-84, San Francisco, CA (Dec. 9\u201312, 1984 )"
    },
    {
      "key": "7_CR62",
      "volume-title": "Dynamics of Extreme Nonequilibrium Electron Transport in Ga As",
      "author": "JR Hayes",
      "year": "1986",
      "unstructured": "J. R. Hayes, A. F. J. Levi: \u201cDynamics of Extreme Nonequilibrium Electron Transport in GaAs\u201d, IEEE J. of Quantum Electron., 1744, QE-22 (1986)"
    },
    {
      "key": "7_CR63",
      "first-page": "49",
      "volume": "1481",
      "author": "JR Hayes",
      "year": "1986",
      "unstructured": "J. R. Hayes, A. F. J. Levi, A. C. Gossard, J. H. English: \u201cBase Transport Dynamics in a Heterojunction Bipolar Transistor\u201d, Appl. Phys. Lett., 1481, 49 (1986)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR64",
      "first-page": "52",
      "volume": "2247",
      "author": "K Berthold",
      "year": "1988",
      "unstructured": "K. Berthold, A. F. J. Levi, J. Walker, R. J. Malik: \u201cExtreme Nonequilibrium Transport in Heterojunction Bipolar Transistors\u201d, Appl. Phys. Lett., 2247, 52 (1988)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR65",
      "volume-title": "Resonant Tunnelling Devices with Multiple Negative Differential Resistance",
      "author": "F Capasso",
      "year": "1987",
      "unstructured": "F. Capasso, S. Sen, A. Y. Cho, D. Sivco: \u201cResonant Tunnelling Devices with Multiple Negative Differential Resistance and Demonstration of a Three-State Memory Cell for Multiple-Valued Logic Applications\u201d, IEEE Electron Dev. Lett., 297, EDL-8 (1987)"
    },
    {
      "key": "7_CR66",
      "first-page": "52",
      "volume": "2163",
      "author": "RC Potter",
      "year": "1988",
      "unstructured": "R. C. Potter, A. A. Lakhani, D. Beyea, H. Hier, E. Hempfling A. Fathimulla: \u201cThree-Dimensional Integration of Resonant Tunnelling Structures for Signal Processing and Three-State Logic\u201d, Appl. Phys. Lett., 2163, 52 (1988)",
      "journal-title": "Phys. Lett."
    },
    {
      "key": "7_CR67",
      "first-page": "24",
      "volume": "681",
      "author": "AA Lakhani",
      "year": "1988",
      "unstructured": "A. A. Lakhani, R. C. Potter, H. S. Hier: \u201cEleven-Bit Parity Generator with a Single, Vertically Integrated Resonant Tunnelling Device\u201d, Electron. Lett., 681, 24 (1988)",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "7_CR68",
      "first-page": "9",
      "volume": "402",
      "author": "S Sen",
      "year": "1988",
      "unstructured": "S. Sen, F. Capasso, D. Sivco, A. Y. Cho: \u201cNew Resonant Tunnelling Devices with Multiple Negative Resistance Regions and High Room Temperature Peak to Valley Ratio\u201d, IEEE Electron Dev. Lett., 402, 9 (1988)",
      "journal-title": "IEEE Electron Dev. Lett."
    },
    {
      "key": "7_CR69",
      "volume-title": "Charge Injection Transistor Based on Real-Space Hot-Electron",
      "author": "S Luryi",
      "year": "1984",
      "unstructured": "S. Luryi, A. Kastalsky, A. C. Gossard, R. H. Hendel: \u201cCharge Injection Transistor Based on Real-Space Hot-Electron Transfer\u201d, IEEE Trans. Electron Dev., 832, ED-31 (1984)"
    },
    {
      "volume-title": "Computer Science and Multiple Valued Logic",
      "year": "1977",
      "key": "7_CR70",
      "unstructured": "C. Rine, Ed.: Computer Science and Multiple Valued Logic. Amsterdam: North-Holland (1977)"
    },
    {
      "key": "7_CR71",
      "first-page": "20",
      "volume": "221",
      "author": "A Heung",
      "year": "1984",
      "unstructured": "A. Heung, H. T. Mouftah: \u201cAn All-CMOS Ternary Identity Cell for VLSI Implementation\u201d, Electron. Lett., 221, 20 (1984)",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "7_CR72",
      "unstructured": "General Electric Tunnel Diode Manual, First Ed., 66 (1961)"
    },
    {
      "key": "7_CR73",
      "volume-title": "(May",
      "author": "J S\u00f6derstr\u00f6m",
      "year": "1988",
      "unstructured": "J. S\u00f6derstr\u00f6m, T. G. Andersson: \u201cA Multiple-State Memory Cell Based on the Resonant Tunnelling Diode\u201d, to be published in IEEE Electron Dev. Lett., (May, 1988 )"
    },
    {
      "key": "7_CR74",
      "first-page": "35",
      "volume": "4172",
      "author": "KK Choi",
      "year": "1987",
      "unstructured": "K. K. Choi, B. F. Levine, R. J. Malik, J. Walker, C. G. Bethea: \u201cPeriodic Negative Conductance by Sequential Resonant Tunnelling Through an Expanding High-Field Superlattice Domain\u201d, Phys. Rev. B, 4172, 35 (1987)",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "7_CR75",
      "unstructured": "S. P. Gentile: Basic Theory and Application of Tunnel Diodes, Princeton: Van Nostrand, 156 (1962)"
    },
    {
      "key": "7_CR76",
      "first-page": "55",
      "volume": "2529",
      "author": "AS Vengurlekar",
      "year": "1989",
      "unstructured": "A. S. Vengurlekar, F. Capasso, S. Sen, A. L. Hutchinson, S. N. G. Chu, D. Sivco, A. Y. Cho: \u201cQuasiballistic Resonant Tunneling of Minority Electrons into the Excited States of a Quantum Well\u201d, Appl. Phys. Lett., 2529, 55 (1989)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR77",
      "first-page": "25",
      "volume": "1117",
      "author": "F Capasso",
      "year": "1989",
      "unstructured": "F. Capasso, A. S. Vengurlekar, A. Hutchinson, W. T. Tsang: \u201cNegative Transconductance Superlattice Base Bipolar Transistor\u201d, Electron. Lett. 1117, 25 (1989)",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "7_CR78",
      "first-page": "25",
      "volume": "1219",
      "author": "F Beltram",
      "year": "1989",
      "unstructured": "F. Beltram, F. Capasso, A. L. Hutchinson, R. J. Malik: \u201cContinuum Mini-band Superlattice Base Transistor with Graded Gap Electron Inject\u201d, Electron. Lett. 1219, 25 (1989)",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "7_CR79",
      "first-page": "46",
      "volume": "600",
      "author": "RJ Malik",
      "year": "1985",
      "unstructured": "R. J. Malik, F. Capasso, R. A. Stall, R. A. Kiehl, R. W. Ryan, R. Wunder, C. G. Bethea: High Gain, High Frequency AlGaAs/GaAs Graded Band-Gap Base Bipolar Transistors with a Be Diffusion Setback Layer in the Base\u201c, Appl. Phys. Lett., 600, 46 (1985)",
      "journal-title": "Phys. Lett."
    },
    {
      "key": "7_CR80",
      "first-page": "29",
      "volume": "141",
      "author": "D Ankri",
      "year": "1986",
      "unstructured": "D. Ankri, R. A. Zoulay, E. Caquot, J. Dangal, C. Dubon, J. Palmier: \u201cAnalysis of D. C. Characteristics of GaAlAs/GaAs Double Heterojunction Bipolar Transistors\u201d, Solid-State Electron., 141, 29 (1986)",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "7_CR81",
      "doi-asserted-by": "crossref",
      "unstructured": "T. Futatsugi, Y. Yamaguchi, S. Muto, N. Yokoyama, A. Shibatomi: \u201cInAlAs/InGaAs Resonant Tunnelling Bipolar Transistor (RBTs) Operating at Room Temperature with High Current Gains\u201d, IEEE International Electron Device Meeting Technical Digest, 877, IEDM-87, Washington, DC (Dec. 6\u20139, 1987 )",
      "DOI": "10.1109/IEDM.1987.191579"
    },
    {
      "key": "7_CR82",
      "first-page": "96",
      "volume": "605",
      "author": "S Sen",
      "year": "1988",
      "unstructured": "S. Sen, F. Capasso, A. Y. Cho, D. L. Sivco: \u201cStacked Double Barriers and their Application in Novel Multi-State Resonant Tunnelling Bipolar Transistor\u201d, Inst. Phys. Conf. Ser. 605, 96 (1988)",
      "journal-title": "Inst. Phys. Conf. Ser."
    },
    {
      "key": "7_CR83",
      "first-page": "9",
      "volume": "533",
      "author": "S Sen",
      "year": "1988",
      "unstructured": "S. Sen, F. Capasso, A. Y. Cho, D. L. Sivco: \u201cMultiple State Resonant Tunnelling Bipolar Transistor Operating at Room Temperature and its Application as a Frequency Multiplier\u201d, IEEE Electron Dev. Lett., 533, 9 (1988)",
      "journal-title": "IEEE Electron Dev. Lett."
    },
    {
      "key": "7_CR84",
      "first-page": "53",
      "volume": "1056",
      "author": "F Capasso",
      "year": "1988",
      "unstructured": "F. Capasso, S. Sen, A. Y. Cho, D. L. Sivco: \u201cMultiple Negative Transconductance and Differential Conductance in a Bipolar Transistor by Sequential Quenching of Resonant Tunnelling\u201d, Appl. Phys. Lett., 1056, 53 (1988)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR85",
      "first-page": "36",
      "volume": "580",
      "author": "SR Forrest",
      "year": "1980",
      "unstructured": "S. R. Forrest, M. DiDomenico, Jr, R. G. Smith, H. J. Stocker: \u201cEvidence for Tunnelling in Reverse-Biased III\u2014V Photodetector Diodes\u201d, Appl. Phys. Lett. 580, 36 (1980)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR86",
      "first-page": "24",
      "volume": "1506",
      "author": "S Sen",
      "year": "1988",
      "unstructured": "S. Sen, F. Capasso, A. Y. Cho, D. L. Sivco: \u201cParity Generator Circuit Using a Multi-State Resonant Tunnelling Bipolar Transistor\u201d, Electron. Lett., 1506, 24 (1988)",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "7_CR87",
      "first-page": "53",
      "volume": "2173",
      "author": "DAB Miller",
      "year": "1984",
      "unstructured": "D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, C. A. Burrus: \u201cBand-Edge Electroabsorption in Quantum Well Structures\u201d, Phys. Rev. Lett., 2173, 53 (1984)",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "7_CR88",
      "first-page": "52",
      "volume": "501",
      "author": "S Luryi",
      "year": "1988",
      "unstructured": "S. Luryi: \u201cQuantum Capacitance Devices\u201d, Appl. Phys. Lett., 501, 52 (1988)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR89",
      "first-page": "51",
      "volume": "1542",
      "author": "TK Woodward",
      "year": "1987",
      "unstructured": "T. K. Woodward, T. C. McGill, H. F. Chung, R. D. Burnham: \u201cIntegration of a Resonant-Tunnelling Structure with a Metal-Semiconductor Field-Effect Transistor\u201d, Appl. Phys. Lett., 1542, 51 (1987)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR90",
      "volume-title": "Applications of Resonant-Tunnelling Field-Effect Transistors",
      "author": "TK Woodward",
      "year": "1988",
      "unstructured": "T. K. Woodward, T. C. McGill, H. F. Chung, R. D. Burnham: \u201cApplications of Resonant-Tunnelling Field-Effect Transistors\u201d, IEEE Electron Dev. Lett., 122, EDL-9 (1988)"
    },
    {
      "key": "7_CR91",
      "doi-asserted-by": "crossref",
      "unstructured": "V. J. Goldman, D. C. Tsui, J. E. Cunningham: \u201cResonant Tunnelling in a Magnetic Field: Evidence for Space-Charge Build-Up\u201d, Phys. Rev., 9387, B 35 (1987)",
      "DOI": "10.1103/PhysRevB.35.9387"
    },
    {
      "key": "7_CR92",
      "doi-asserted-by": "crossref",
      "unstructured": "H. Sakaki: \u201cScattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures\u201d, Jpn. J. Appl. Phys., L-735, 19 (1980)",
      "DOI": "10.1143/JJAP.19.L735"
    },
    {
      "key": "7_CR93",
      "first-page": "47",
      "volume": "1324",
      "author": "Y Chang",
      "year": "1985",
      "unstructured": "Yia-Chung Chang, L. L. Chang, L. Esaki: \u201cA New One-Dimensional Quantum Well Structure\u201d, Appl. Phys. Lett., 1324, 47 (1985)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR94",
      "first-page": "41",
      "volume": "636",
      "author": "PM Petroff",
      "year": "1982",
      "unstructured": "P. M. Petroff, A. C. Gossard, R. A. Logan, W. Wiegmann: \u201cToward Quantum Well Wires: Fabrication and Optical Properties\u201d, Appl. Phys. Lett., 636, 41 (1982)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR95",
      "first-page": "49",
      "volume": "1275",
      "author": "J Cibert",
      "year": "1986",
      "unstructured": "J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, J. H. English: \u201cOptically Detected Carrier Confinement to One and Zero Dimensions in GaAs Quantum Well Wires and Boxes\u201d, Appl. Phys. Lett., 1275, 49 (1986)",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "7_CR96",
      "first-page": "4",
      "volume": "358",
      "author": "M. A. Reed",
      "year": "1986",
      "unstructured": "M. A. Reed, R. T. Bate, K. Bradshaw, W. M. Duncan, W. R. Frensley, J. W. Lee, H. D. Shih: \u201cSpatial Quantization in GaAs-AIGaAs Multiple Quantum Dots\u201d, J. Vac. Sci. Technol., 358, B 4 (1986)",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "7_CR97",
      "doi-asserted-by": "publisher",
      "first-page": "816",
      "DOI": "10.1103/PhysRev.163.816",
      "volume": "163",
      "author": "F Stern",
      "year": "1967",
      "unstructured": "F. Stern, W. E. Howard: Phys. Rev. 163, 816 (1967)",
      "journal-title": "Phys. Rev"
    },
    {
      "key": "7_CR98",
      "unstructured": "It should be noted that while the exposed portion of the channel is depleted, the portion under the emitter is not. This follows unambiguously from the identification of the current peaks with resonant tunnelling. At the bias conditions corresponding to the resonances in the range Vo 0, the field drop associated with charge in the quantum well is always 2 x 105 V/cm corresponding to n Z, 2 x 1012 cm-2."
    }
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