Crossref book-chapter
Springer US
Phase Change Materials (297)
Bibliography

Yamada, N. (2009). Development of Materials for Third Generation Optical Storage Media. Phase Change Materials, 199–226.

Authors 1
  1. Noboru Yamada (first)
References 48 Referenced 9
  1. Ovshinsky, S. R.: Reversible Electrical Switching Phenomena in Disordered Structures. Phys. Rev. Lett. 21, 1450–1453 (1968) (10.1103/PhysRevLett.21.1450) / Phys. Rev. Lett. by S. R. Ovshinsky (1968)
  2. Yamada, N.: Phase-chase-change optical materials. Mater. Res. Soc. Bulletin 21, 48–50 (1996) (10.1557/S0883769400036368) / Mater. Res. Soc. Bulletin by N. Yamada (1996)
  3. Wuttig, M, Yamada, N.: Phase-change materials for rewriteable data storage. Nature Mater.6, 824-832 (2007) (10.1038/nmat2009) / Nature Mater. by M Wuttig (2007)
  4. Nishio, K., Kōga, J., Yamaguchi, T., Yonezawa, F.: Molecular dynamics study on freezing of Lennard-Jones argon in an open-ended cylindrical pore. J. Non-Cryst. Solids 345-346, 694-697 (2004) (10.1016/j.jnoncrysol.2004.08.250) / J. Non-Cryst. Solids 345- by K. Nishio (2004)
  5. Feinleib, J., deNeufville, J., Moss, S. C., Ovshinsky, S. R.: Rapid reversible light-induced crystallization of amorphous semiconductors, Appl. Phys. Lett. 18, 254-257 (1971) (10.1063/1.1653653) / Appl. Phys. Lett. by J. Feinleib (1971)
  6. Bichara, C, Raty, J.-Y., Gaspard, J.-P.: Structure and bonding in liquid tellurium. Phys. Rev. B 53, 206 - 211 (1996) (10.1103/PhysRevB.53.206) / Phys. Rev. B by C Bichara (1996)
  7. Yamada, N.: Phase Change materials in optical storage application. Mater. Res. Soc. Spring Meeting, San Francisco, March 2008, Phase Change Materials: Science and Applications, tutorial notes.
  8. Yamada, N.: Research relating to phase change materials and their applications. PhD thesis, Kyoto University, Japan, 2000 / Research relating to phase change materials and their applications. PhD thesis by N. Yamada (2000)
  9. Sakka, S., Mackenzie, J. D.: High pressure effects on glass, J. Non-Cryst. Solids 1, 107-142 (1969) (10.1016/0022-3093(69)90012-X) / J. Non-Cryst. Solids by S. Sakka (1969)
  10. Ohta, T., Inoue, K., Uchida, M., Yoshioka, K., Akiyama, T., Furukawa, S., Nagata, K., Nakamura, S.: Phase change disk media having rapid cooling structure. Jpn. J. Appl. Phys. 28, Supplement 28-3, 123-128 (1989) (10.7567/JJAPS.28S3.123) / Jpn. J. Appl. Phys. by T. Ohta (1989)
  11. Nishiuchi, K., Yamada, N., Akahira, N., Takenaga, M., Akutagawa, R.: Laser diode beam exposure instrument for rapid quenching of thin-film material. Rev. Sci. Instrum. 63, 3425–3430 (1992) (10.1063/1.1143747) / Rev. Sci. Instrum. by K. Nishiuchi (1992)
  12. Hansen, M., Anderko, K.: Constitution of Binary Alloys. McGraw-Hill, New York (1958) / Constitution of Binary Alloys by M. Hansen (1958)
  13. Chen, M., Rubin, K. A., Barton, R. W.: Compound materials for reversible, phase-change optical data storage. Appl. Phys. Lett. 49, 502-504 (1986) (10.1063/1.97617) / Appl. Phys. Lett. by M. Chen (1986)
  14. Yamada, N., Takao, M., Takenaga, M.: Te-Ge-Sn-Au Phase change recording film for optical disk. Proc. SPIE 695, Optical Data Storage II, San Diego, 79-85 (1986) (10.1117/12.936820) / Proc. SPIE by N. Yamada (1986)
  15. Ohno, E., Yamada, N., Kurumizawa, T., Kimura, K., Takao, M.: TeGeSnAu alloys for phase change type optical disk memories. Jpn. J. Appl. Phys. 28, 1235-1240 (1989) (10.1143/JJAP.28.1235) / Jpn. J. Appl. Phys. by E. Ohno (1989)
  16. Yamada, N., Ohno, E., Akahira, N., Nishiuchi, K., Nagata, K., Takao, M.: Jpn. J. Appl. Phys. 26, Suppl. 26–4, 61-66 (1987) (10.7567/JJAPS.26S4.61) / Jpn. J. Appl. Phys. by N. Yamada (1987)
  17. Strand, D., Tsu, D.V., Miller, R., Hennessey, M., Jablonski, D.: Optical Routers Based on Ovonic Phase Change Materials. Proc. E\PCOS06 (2006), Grenoble ; available at http://www.epcos.org>.
  18. Yamada, N., Otoba, M., Kawahara, K., Miyagawa, N., Ohta, H., Akahira, N., Matsunaga, T.: Phase-Change Optical Disk Having a Nitride Interface Layer, Jpn. J. Appl. Phys. 37, 2104-2110 (1998) (10.1143/JJAP.37.2104) / Jpn. J. Appl. Phys. by N. Yamada (1998)
  19. Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N., Takao, M.: Rapid-phase transition of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory. J. Appl. Phys. 69, 2849–2856 (1991) (10.1063/1.348620) / J. Appl. Phys. by N. Yamada (1991)
  20. Yamada, N., Matsunaga, T.: Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory. J. Appl. Phys. 88, 7020-7028 (2000) (10.1063/1.1314323) / J. Appl. Phys. by N. Yamada (2000)
  21. Nonaka, T., Ohbayashi, G., Toriumi, Y., Mori, Y., Hashimoto, H.: Crystal structure of GeTe and Ge2Sb25 meta-stable phase. Thin Solid Films 370, 258-261 (2000) (10.1016/S0040-6090(99)01090-1) / Thin Solid Films by T. Nonaka (2000)
  22. Kolobov, A.V., Fons, P., Frenkel, A.I., Ankudinov, A.L., Tominaga J., Tomoya, U.: Understanding the phase-change mechanism of rewritable optical media. Nature Mater. 3, (2004), 703–708 (2004) (10.1038/nmat1215) / Nature Mater. by A.V. Kolobov (2004)
  23. Shamoto, S., Yamada, N., Matsunaga, T.: Large displacement of germanium atoms in crystalline Ge2Sb2Te5. Appl. Phys. Lett. 86, 081904 (2005) (10.1063/1.1861976) / Appl. Phys. Lett. by S. Shamoto (2005)
  24. Kohara S., Kimura S., Tanada H., Yasuda N., Fukuyama Y., Murayama H., Kim J., Takata M., Kato K., Tanaka Y., Usuki T., Suzuyu K., Tanaka H., Moritomo Y., Matsunaga T., Kojima R. and Yamada N., Structural basis for fast phase change of DVD-RAM -Topological order in the amorphous phase. Proc. European Phase Change and Ovonic Science Symp., Zermatt, Switzerland, 2007 / Structural basis for fast phase change of DVD-RAM -Topological order in the amorphous phase by S. Kohara (2007)
  25. Matsunaga, T., Yamada, N., Kubota, Y.: Structures of stable and metastable Ge2Sb2Te5, an intermetallic compound in GeTe-Sb2Te3 pseudobinary systems. Acta Cryst. B60, 685-691 (2004) (10.1107/S0108768104022906) / Acta Cryst. by T. Matsunaga (2004)
  26. Private communication, Kohara, S. (JASRI) (2006)
  27. Matsunaga, T., Yamada, N.: A Study of highly symmetrical crystal structures, commonly seen in high-speed phase-change materials, using synchrotron radiation. Jpn. J. Appl. Phys. 41, 1674-1678 (2002) (10.1143/JJAP.41.1674) / Jpn. J. Appl. Phys. by T. Matsunaga (2002)
  28. Matsunaga, T., Umetani, Y., Yamada, N.: Structural study of a Ag3.4In3.7Sb76.4Te16.5 quadruple compound utilized for phase-change optical disks. Phys. Rev. B 64, 184116 (2001) (10.1103/PhysRevB.64.184116) / Phys. Rev. by T. Matsunaga (2001)
  29. Matsunaga. T, Yamada, N.: Crystal structure and bonding nature of Ge8Sb2Te11, a suitable matee material for high-speed, high-density phase-change recording. Proc. PCOS2004, 1-4(2004)
  30. H. M. Rietveld: A profile refinement method for nuclear and magnetic structures, J. Appl. Cryst. 2, 65-71 (1969) (10.1107/S0021889869006558) / J. Appl. Cryst. by H. M. Rietveld (1969)
  31. Clegg, W., Blake, A.J., Gould, R.O., Main, P., Edited by Clegg, W.: Crystal Structure Analysis Principles and Practice. IUCr Texts on Crystallography 6, International Union of Crystallography / Oxford University Press, 164 (2001) / IUCr Texts on Crystallography by W. Clegg (2001)
  32. Baker, D. A., Paesler, M. A., Lucovsky, G., Agarwal, S. C., Taylor, P. C.: Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5. Phys. Rev. Lett. 96, 255501 (2006) (10.1103/PhysRevLett.96.255501) / Phys. Rev. Lett. by D. A. Baker (2006)
  33. Kojima, R., Okabayashi, S., Kashihara, T., Horai, K., Matsunaga, T., Ohno, E., Yamada, N., Ohta, T.: Nitrogen doping effect on phase change optical disks. Jpn. J. Appl. Phys. Part 1 37, 2098–2103 (1998) (10.1143/JJAP.37.2098) / Jpn. J. Appl. Phys. Part 1 by R. Kojima (1998)
  34. Kojima, R., Yamada, N: Acceleration of crystallization speed by Sn addition to Ge–Sb–Te phase-change recording material. Jpn. J. Appl. Phys. Part 1 40, 5930–5937 (2001) (10.1143/JJAP.40.5930) / Jpn. J. Appl. Phys. Part 1 by R. Kojima (2001)
  35. Yusu, K., Nakai, T., Ashida, S., Ohmachi, N., Morishita, N. & Nakamura, N.: Highspeed crystallization characteristics of Ge–Sb–Te–Bi materials used for next generation rewritable DVD with blue laser and NA = 0.65. Proc. E\PCOS05 (2005); available at http://www.epcos.org
  36. Kusada, H., Hosaka, T., Kojima R., Yamada, N.: Effect of excess Sb on GeTe–Sb2Te3–Bi2Te3 recording films. Proc. 18th Symp. PCOS2005 32–35 (2006)
  37. Iwasaki, H., Ide, Y., Harigaya, M., Kageyama., Y., Fujimura, I.: Completely erasable phase-change optical disk. Jpn. J. Appl. Phys. Part 1 31, 461–465 (1992) (10.1143/JJAP.31.461) / Jpn. J. Appl. Phys. Part 1 by H. Iwasaki (1992)
  38. Horie, M., Nobukuni, N., Kiyono, K. & Ohno, T. High-speed rewritable DVD up to 20 m/s with nucleation-free eutectic phase-change material of Ge(Sb70Te30)+Sb. Proc. SPIE 4090, 135–143 (2000) (10.1117/12.399373) / Proc. SPIE by M. Horie (2000)
  39. Kato, T., Hirata, H., Komaki, T., Inoue, H., Shingai, H., Hayashida, N., Utsunomiya, H., The phase change optical disc with the data recording rate of 140 Mbps. Jpn. J. Appl. Phys. Part 1 41, 1664–1667 (2002) (10.1143/JJAP.41.1664) / Jpn. J. Appl. Phys. Part 1 by T. Kato (2002)
  40. Iwasaki, H., Harigaya, M., Nonoyama, O., Kageyama, Y., Takahashi, M., Yamada, K., Deguchi, H., Ide, Y.: Completely erasable phase-change optical disc. II. Application of Ag–In–Sb–Te mixed-phase system for rewritable compact disc compatible with CD-velocity and double CD-velocity. Jpn. J. Appl. Phys. Part 1 32, 5241–5247 (1993) (10.1143/JJAP.32.5241) / Jpn. J. Appl. Phys. Part 1 by H. Iwasaki (1993)
  41. Afonso, C. N., Solis, J., Catalina, F. & Kalpouzos, C. Ultrafast reversible phase-change in GeSb films for erasable optical storage. Appl. Phys. Lett. 60, 3123–3125 (1992) (10.1063/1.106772) / Appl. Phys. Lett. by C. N. Afonso (1992)
  42. Yuzurihara, H., Iwasa, H. & Kaneko, Y. GeSbSnMn for high speed BD-RE media. Proc. 17th Symp. PCOS2005 19–22 (2005)
  43. Yamada, N., Kojima, R., Uno, M., Akiyama, T., Kitaura, H., Narumi, K., Nishiuchi, K.: Phase-change material for use in rewritable dual-layer optical disk. Proc. SPIE 4342, 55–63 (2002) (10.1117/12.453428) / Proc. SPIE by N. Yamada (2002)
  44. Nishiuchi, K., Yamada, N., Kawahara, K., Kojima, R.: Effect of dielectric material films on crystallization characteristics of Ge2Sb2Te5 phase-change memory film. Jpn. J. Appl. Phys. 46, 7421-7423 (2007) (10.1143/JJAP.46.7421) / Jpn. J. Appl. Phys. by K. Nishiuchi (2007)
  45. Private communication, Matsunaga, T. (Panasonic), from EPCOS2007 Presentation (2007)
  46. Abrikosov, N. Kh., Danilova-Dobryakova, G. T.: Study of the Sb2Te3-GeTe phase diagram. Izv. Akademii Nauk SSSR, Neorg. Mater. 1, 204-209 (1965) / Izv. Akademii Nauk SSSR, Neorg. Mater. by N. Kh. Abrikosov (1965)
  47. Shelimova, L.E., Karpinskii, O.G., Konstantinov, P.P., Kretova. M.A., Avilov, E.S., Zemskov, V.S.: Composition and properties of layered compounds in the GeTe–Sb2Te3 System. Inorganic Materials 37, 342-348 (2001) (10.1023/A:1017519625907) / Inorganic Materials by L.E. Shelimova (2001)
  48. Kifune, K., Kubota, Y., Matsunaga, T, Yamada. N.: Extremely long period-stacking structure in the Sb-Te binary system. Acta Cryst. B61, 492-497 (2005) (10.1107/S0108768105017714) / Acta Cryst. B by K. Kifune (2005)
Dates
Type When
Created 15 years, 2 months ago (June 10, 2010, 6:06 a.m.)
Deposited 4 years, 4 months ago (April 29, 2021, 12:15 a.m.)
Indexed 3 months ago (May 31, 2025, 2:03 a.m.)
Issued 16 years, 8 months ago (Jan. 1, 2009)
Published 16 years, 8 months ago (Jan. 1, 2009)
Published Print 16 years, 8 months ago (Jan. 1, 2009)
Funders 0

None

@inbook{Yamada_2009, title={Development of Materials for Third Generation Optical Storage Media}, ISBN={9780387848747}, url={http://dx.doi.org/10.1007/978-0-387-84874-7_10}, DOI={10.1007/978-0-387-84874-7_10}, booktitle={Phase Change Materials}, publisher={Springer US}, author={Yamada, Noboru}, year={2009}, pages={199–226} }