DOI: 10.1006/spmi.2000.0954. Subthreshold and scaling of PtSi Schottky barrier MOSFETs

Subthreshold and scaling of PtSi Schottky barrier MOSFETs

10.1006/spmi.2000.0954

Crossref journal-article

Elsevier BV

Superlattices and Microstructures (78)

Bibliography

Calvet, L. E., Luebben, H., Reed, M. A., Wang, C., Snyder, J. P., & Tucker, J. R. (2000). Subthreshold and scaling of PtSi Schottky barrier MOSFETs. Superlattices and Microstructures, 28(5â6), 501â506.

Authors 6

L.E Calvet (first)
H Luebben (additional)
M.A Reed (additional)
C Wang (additional)
J.P Snyder (additional)
J.R Tucker (additional)

References 16 Referenced 28

10.1063/1.114513 / Appl. Phys. Lett. by Tucker (1995)
10.1109/16.662789 / IEEE Trans. Electron Devices by Huang (1998)
10.1049/el:19931261 / Electron. Lett. by Hareland (1993)
{'key': '10.1006/spmi.2000.0954_RF4', 'series-title': 'IEDM-98', 'author': 'Ieong', 'year': '1998'} / IEDM-98 by Ieong (1998)
C. Wang, μ, 1998
{'key': '10.1006/spmi.2000.0954_RF6', 'series-title': 'Proc. IEEE 56', 'author': 'Lepselter', 'year': '1968'} / Proc. IEEE 56 by Lepselter (1968)
{'key': '10.1006/spmi.2000.0954_RF7', 'series-title': 'IEDM', 'author': 'Koeneke', 'year': '1981'} / IEDM by Koeneke (1981)
10.1063/1.114513 / Appl. Phys. Lett. by Snyder (1995)
{'key': '10.1006/spmi.2000.0954_RF9', 'volume': '74', 'author': 'Wang', 'year': '1999', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. by Wang (1999)
{'key': '10.1006/spmi.2000.0954_RF10', 'volume': '74', 'author': 'Zhao', 'year': '1999', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. by Zhao (1999)
10.1016/S0167-9317(96)00195-5 / Microelectron. Eng. by Rishton (1997)
10.1143/JJAP.38.L629 / Jpn. J. Appl. Phys. by Saitoh (1999)
J. Kedzierski, P. Xuan, V. Subramanian, E. Anderson, J. Bokor, T. J. King, C. Hu
L. E. Calvet, H. Leubben, M. A. Reed, C. Wang, J. P. Snyder, J. R. Tucker
{'key': '10.1006/spmi.2000.0954_RF15', 'series-title': 'The Physics of Semiconductor Devices', 'author': 'Sze', 'year': '1981'} / The Physics of Semiconductor Devices by Sze (1981)
10.1109/55.817436 / IEEE Electron Device Lett. by Kang (2000)

Dates

Type	When
Created	22 years, 11 months ago (Sept. 18, 2002, 5:49 p.m.)
Deposited	6 years, 3 months ago (May 8, 2019, 5:20 a.m.)
Indexed	5 months, 1 week ago (March 22, 2025, 4:26 a.m.)
Issued	24 years, 10 months ago (Nov. 1, 2000)
Published	24 years, 10 months ago (Nov. 1, 2000)
Published Print	24 years, 10 months ago (Nov. 1, 2000)

Funders 0

None

BibTeX

@article{Calvet_2000, title={Subthreshold and scaling of PtSi Schottky barrier MOSFETs}, volume={28}, ISSN={0749-6036}, url={http://dx.doi.org/10.1006/spmi.2000.0954}, DOI={10.1006/spmi.2000.0954}, number={5–6}, journal={Superlattices and Microstructures}, publisher={Elsevier BV}, author={Calvet, L.E and Luebben, H and Reed, M.A and Wang, C and Snyder, J.P and Tucker, J.R}, year={2000}, month=nov, pages={501–506} }

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