Abstract
The photoresponse characteristics of In2Se3 nanowire photodetectors with the κ‐phase and α‐phase structures are investigated. The as‐grown κ‐phase In2Se3 nanowires by the vapor‐liquid‐solid technique are phase‐transformed to the α‐phase nanowires by thermal annealing. The photoresponse performances of the κ‐phase and α‐phase In2Se3 nanowire photodetectors are characterized over a wide range of wavelengths (300–900 nm). The phase of the nanowires is analyzed using a high‐resolution transmission microscopy equipped with energy dispersive X‐ray spectroscopy and X‐ray diffraction. The electrical conductivity and photoresponse characteristics are significantly enhanced in the α‐phase due to smaller bandgap structure compared to the κ‐phase nanowires. The spectral responsivities of the α‐phase devices are 200 times larger than those of the κ‐phase devices. The superior performance of the thermally phase‐transformed In2Se3 nanowire devices offers an avenue to develop highly sensitive photodetector applications.
References
47
Referenced
40
{'key': 'e_1_2_6_1_1', 'volume-title': 'Inorganic Nanowires: Application, Properties and Characterization', 'author': 'Meyyappan M.', 'year': '2010'}
/ Inorganic Nanowires: Application, Properties and Characterization by Meyyappan M. (2010)10.1109/TED.2008.2008011
10.1002/adma.200900860
10.1002/adma.200502194
10.1038/nature06381
10.1038/nature06458
10.1038/nphoton.2009.184
10.1038/nnano.2010.78
10.1039/c0cs00126k
10.1002/adfm.201001259
10.1021/nn9012466
10.1039/c0jm01013h
10.1021/nl080524d
10.1063/1.2388890
10.1063/1.4802672
10.1021/nn101467p
10.1016/0927-0248(94)90251-8
10.1016/0025-5408(85)90185-0
10.1063/1.3669513
10.1016/0038-1098(86)90679-4
10.1016/j.solmat.2005.09.013
10.1021/nl400888p
10.1088/0022-3727/25/7/015
10.1016/0022-4596(88)90361-1
10.1063/1.1622117
10.1016/S0169-4332(99)00300-1
10.1016/0040-6090(87)90340-3
10.1143/JJAP.37.4264
10.1063/1.1526925
10.1039/c1jm10419e
10.1016/j.ssc.2013.03.012
10.1063/1.1592631
10.1063/1.1355287
10.1016/j.sse.2012.10.007
10.1002/adfm.201202739
10.1021/nl062228b
10.1021/ja9072386
{'key': 'e_1_2_6_38_1', 'first-page': '405', 'volume': '38', 'author': 'Kim N.‐O.', 'year': '2001', 'journal-title': 'J. Kor. Phys. Soc.'}
/ J. Kor. Phys. Soc. by Kim N.‐O. (2001)10.1103/PhysRevB.40.3133
10.1016/S0254-0584(99)00145-5
10.1016/j.cej.2013.03.066
10.1021/am4026505
10.1063/1.3491212
10.1002/adma.200802441
10.1002/adma.200902126
10.1063/1.2424653
10.1002/adma.201002097
Dates
Type | When |
---|---|
Created | 11 years, 3 months ago (May 15, 2014, 5:37 a.m.) |
Deposited | 1 year, 9 months ago (Oct. 27, 2023, 7:41 p.m.) |
Indexed | 1 year, 4 months ago (April 6, 2024, 8:35 a.m.) |
Issued | 11 years, 3 months ago (May 15, 2014) |
Published | 11 years, 3 months ago (May 15, 2014) |
Published Online | 11 years, 3 months ago (May 15, 2014) |
Published Print | 10 years, 11 months ago (Sept. 1, 2014) |
@article{Kang_2014, title={Thermally Phase‐Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors}, volume={10}, ISSN={1613-6829}, url={http://dx.doi.org/10.1002/smll.201400373}, DOI={10.1002/smll.201400373}, number={18}, journal={Small}, publisher={Wiley}, author={Kang, Daegun and Rim, Taiuk and Baek, Chang‐Ki and Meyyappan, M. and Lee, Jeong‐Soo}, year={2014}, month=may, pages={3795–3802} }