Abstract
AbstractA new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free‐standing ZnO nanorod (ZnONR) array with a layer of transparent monolayer graphene (MLG) film. The single‐crystalline [0001]‐oriented ZnONR array has a length of about 8–11 μm, and a diameter of 100∼600 nm. Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs. By studying the I–V characteristics in the temperature range of 80–300 K, the barrier heights of the MLG film/ZnONR array Schottky barrier are estimated at different temperatures. Interestingly, the heterojunction diode with typical rectifying characteristics exhibits a high sensitivity to UV light illumination and a quick response of millisecond rise time/fall times with excellent reproducibility, whereas it is weakly sensitive to visible light irradiation. It is also observed that this UV photodetector (PD) is capable of monitoring a fast switching light with a frequency as high as 2250 Hz. The generality of the above results suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices.
References
43
Referenced
287
10.1063/1.3040054
{'key': 'e_1_2_7_2_2', 'first-page': '1461', 'volume': '21', 'author': 'Lu Z. H.', 'year': '2011', 'journal-title': 'J. Mater. Chem.'}
/ J. Mater. Chem. by Lu Z. H. (2011)10.1063/1.2190459
{'key': 'e_1_2_7_4_2', 'first-page': '5771', 'volume': '312', 'author': 'Wang Z. L.', 'year': '2006', 'journal-title': 'Science'}
/ Science by Wang Z. L. (2006)10.1021/nl035198a
10.1063/1.3653835
{'key': 'e_1_2_7_7_2', 'first-page': '112101', 'volume': '4', 'author': 'Lee Y. S.', 'year': '2011', 'journal-title': 'Appl. Phys. Lett.'}
/ Appl. Phys. Lett. by Lee Y. S. (2011)10.1126/science.1060367
10.1021/am100746c
10.1063/1.1836870
10.1021/nl070430o
10.1021/nl070111x
10.1063/1.3299269
10.1016/j.cplett.2009.09.024
10.1088/0268-1242/18/4/201
10.1088/0957-4484/22/48/485701
10.1002/smll.200901968
10.1016/j.snb.2010.12.033
10.1039/C0JM01495H
10.1063/1.3629789
10.1039/c1cc12419f
10.1021/nl902623y
10.1039/c2jm34869a
10.1063/1.4711205
10.1016/j.apsusc.2005.01.009
10.1016/0039-6028(69)90245-3
{'key': 'e_1_2_7_27_2', 'volume-title': 'Semiconductor Electronic Devices: Physics and Fabrication Technology', 'author': 'Sze S. M.', 'year': '1986'}
/ Semiconductor Electronic Devices: Physics and Fabrication Technology by Sze S. M. (1986)10.1063/1.1756205
10.1021/la902171j
10.1021/nl0803702
10.1021/nn203357e
10.1088/0957-4484/22/26/265506
10.1002/adma.201102585
10.1002/smll.200600134
10.1063/1.368295
{'key': 'e_1_2_7_36_2', 'author': 'Li X. D.', 'year': '2013', 'journal-title': 'Small'}
/ Small by Li X. D. (2013)10.1016/j.jpowsour.2012.04.042
10.1016/j.nanoen.2012.05.003
10.1021/nn203506n
10.1063/1.3643473
10.1016/S0040-6090(99)00390-9
- The dielectric constant (2.3013 + 0.0014i) of PMMA is obtained from the 495 PMMA product data sheet (Microchem).
10.1063/1.373461
Dates
Type | When |
---|---|
Created | 12 years, 5 months ago (March 14, 2013, 4:14 a.m.) |
Deposited | 1 year, 10 months ago (Oct. 8, 2023, 4:21 a.m.) |
Indexed | 1 week, 6 days ago (Aug. 19, 2025, 6:41 a.m.) |
Issued | 12 years, 5 months ago (March 13, 2013) |
Published | 12 years, 5 months ago (March 13, 2013) |
Published Online | 12 years, 5 months ago (March 13, 2013) |
Published Print | 11 years, 11 months ago (Sept. 9, 2013) |
@article{Nie_2013, title={Monolayer Graphene Film on ZnO Nanorod Array for High‐Performance Schottky Junction Ultraviolet Photodetectors}, volume={9}, ISSN={1613-6829}, url={http://dx.doi.org/10.1002/smll.201203188}, DOI={10.1002/smll.201203188}, number={17}, journal={Small}, publisher={Wiley}, author={Nie, Biao and Hu, Ji‐Gang and Luo, Lin‐Bao and Xie, Chao and Zeng, Long‐Hui and Lv, Peng and Li, Fang‐Ze and Jie, Jian‐Sheng and Feng, Mei and Wu, Chun‐Yan and Yu, Yong‐Qiang and Yu, Shu‐Hong}, year={2013}, month=mar, pages={2872–2879} }