Abstract
AbstractA method is reported to pattern monolayer graphene nanoconstriction field‐effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback‐controlled electromigration (FCE) to form a constriction in a gold etch mask that is first patterned using conventional lithographic techniques. The use of FCE allows the etch mask to be patterned on size scales below the limit of conventional nanolithography. The opening of a confinement‐induced energy gap is observed as the NCFET width is reduced, as evidenced by a sharp increase in the NCFET on/off ratio. The on/off ratios obtained with this procedure can be larger than 1000 at room temperature for the narrowest devices; this is the first report of such large room‐temperature on/off ratios for patterned graphene FETs.
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Dates
Type | When |
---|---|
Created | 14 years, 9 months ago (Oct. 27, 2010, 7:52 a.m.) |
Deposited | 1 year, 10 months ago (Oct. 8, 2023, 3:42 a.m.) |
Indexed | 1 month, 1 week ago (July 12, 2025, 6:46 p.m.) |
Issued | 14 years, 9 months ago (Oct. 27, 2010) |
Published | 14 years, 9 months ago (Oct. 27, 2010) |
Published Online | 14 years, 9 months ago (Oct. 27, 2010) |
Published Print | 14 years, 8 months ago (Dec. 6, 2010) |
@article{Lu_2010, title={High‐On/Off‐Ratio Graphene Nanoconstriction Field‐Effect Transistor}, volume={6}, ISSN={1613-6829}, url={http://dx.doi.org/10.1002/smll.201001324}, DOI={10.1002/smll.201001324}, number={23}, journal={Small}, publisher={Wiley}, author={Lu, Ye and Goldsmith, Brett and Strachan, Douglas R. and Lim, Jong Hsien and Luo, Zhengtang and Johnson, A. T. Charlie}, year={2010}, month=oct, pages={2748–2754} }