DOI: 10.1002/sia.2597. Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

10.1002/sia.2597

Crossref journal-article

Wiley

Surface and Interface Analysis (311)

Abstract

AbstractThe accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si3N4/SiO2 stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 1015 cm−2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O2+ and Cs+ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O2+ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As+‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs+ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O2+ primary ions was found to be effective, and 0.25 keV O2+ at normal incidence provided a more reliable result than Cs+ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.

Bibliography

Kataoka, Y., & Itani, T. (2007). Ultrashallow depth profiling using SIMS and ion scattering spectroscopy. Surface and Interface Analysis, 39(10), 826â831. Portico.

Authors 2

Y. Kataoka (first)
T. Itani (additional)

References 16 Referenced 17

10.1063/1.341381
10.1016/0168-1176(90)80015-U
10.1016/0168-583X(92)95545-3
10.1016/0168-583X(94)95847-5
10.1116/1.1447250
10.1016/S0169-4332(02)00650-5
WittmaackK LoiblN.Abstracts of the 13th International Conference on Secondary Ion Mass Spectrometry November2001; Nara 131.
KataokaY ShigenoM.Abstracts of the 14th International Conference on Secondary Ion Mass Spectrometry and Related Topics September2003; San Diego 92.
10.1116/1.589794
10.1116/1.590116
10.1116/1.591241
{'key': 'e_1_2_1_13_2', 'first-page': '489', 'volume-title': 'Secondary Ion Mass Spectrometry SIMS XII', 'author': 'Tomita M', 'year': '2000'} / Secondary Ion Mass Spectrometry SIMS XII by Tomita M (2000)
10.1016/S0169-4332(02)00670-0
10.1063/1.111653
10.1016/0168-583X(91)95454-L
10.1016/0168-583X(85)90463-X

Dates

Type	When
Created	17 years, 11 months ago (Sept. 11, 2007, 8:18 a.m.)
Deposited	1 year, 9 months ago (Nov. 14, 2023, 11:22 a.m.)
Indexed	1 year, 8 months ago (Dec. 8, 2023, 9:03 a.m.)
Issued	17 years, 11 months ago (Sept. 11, 2007)
Published	17 years, 11 months ago (Sept. 11, 2007)
Published Online	17 years, 11 months ago (Sept. 11, 2007)
Published Print	17 years, 10 months ago (Oct. 1, 2007)

Funders 0

None

BibTeX

@article{Kataoka_2007, title={Ultrashallow depth profiling using SIMS and ion scattering spectroscopy}, volume={39}, ISSN={1096-9918}, url={http://dx.doi.org/10.1002/sia.2597}, DOI={10.1002/sia.2597}, number={10}, journal={Surface and Interface Analysis}, publisher={Wiley}, author={Kataoka, Y. and Itani, T.}, year={2007}, month=sep, pages={826–831} }

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