Abstract
Abstractmagnified imageThe effect of the top electrode (TE) on the ferroelectric properties and switching endurance of thin Hf0.5Zr0.5O2 films was examined. The TiN/Hf0.5Zr0.5O2/TiN capacitor can endure electric cycling up to 109 times, which is promising for the next‐generation memory. RuO2 TE was reduced during annealing due to the reactive TiN bottom electrode, resulting in the degradation of the ferroelectric properties and endurance. In addition, the endurance of the TiN/Hf0.5Zr0.5O2/TiN capacitors was optimized by changing the film thickness and the postannealing temperature. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Dates
Type | When |
---|---|
Created | 11 years, 6 months ago (Feb. 17, 2014, 7:06 a.m.) |
Deposited | 1 year, 11 months ago (Sept. 11, 2023, 7:01 p.m.) |
Indexed | 2 days, 18 hours ago (Aug. 19, 2025, 6:55 a.m.) |
Issued | 11 years, 6 months ago (Feb. 17, 2014) |
Published | 11 years, 6 months ago (Feb. 17, 2014) |
Published Online | 11 years, 6 months ago (Feb. 17, 2014) |
Published Print | 11 years, 2 months ago (June 1, 2014) |
@article{Park_2014, title={Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes}, volume={8}, ISSN={1862-6270}, url={http://dx.doi.org/10.1002/pssr.201409017}, DOI={10.1002/pssr.201409017}, number={6}, journal={physica status solidi (RRL) – Rapid Research Letters}, publisher={Wiley}, author={Park, Min Hyuk and Kim, Han Joon and Kim, Yu Jin and Jeon, Woojin and Moon, Taehwan and Hwang, Cheol Seong}, year={2014}, month=feb, pages={532–535} }