Crossref journal-article
Wiley
physica status solidi (RRL) – Rapid Research Letters (311)
Abstract

Abstractmagnified imageThe effect of the top electrode (TE) on the ferroelectric properties and switching endurance of thin Hf0.5Zr0.5O2 films was examined. The TiN/Hf0.5Zr0.5O2/TiN capacitor can endure electric cycling up to 109 times, which is promising for the next‐generation memory. RuO2 TE was reduced during annealing due to the reactive TiN bottom electrode, resulting in the degradation of the ferroelectric properties and endurance. In addition, the endurance of the TiN/Hf0.5Zr0.5O2/TiN capacitors was optimized by changing the film thickness and the postannealing temperature. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Bibliography

Park, M. H., Kim, H. J., Kim, Y. J., Jeon, W., Moon, T., & Hwang, C. S. (2014). Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes. Physica Status Solidi (RRL) – Rapid Research Letters, 8(6), 532–535. Portico.

Authors 6
  1. Min Hyuk Park (first)
  2. Han Joon Kim (additional)
  3. Yu Jin Kim (additional)
  4. Woojin Jeon (additional)
  5. Taehwan Moon (additional)
  6. Cheol Seong Hwang (additional)
References 20 Referenced 139
  1. 10.1146/annurev.matsci.30.1.263
  2. 10.1063/1.110436
  3. 10.1063/1.126786
  4. 10.1002/pssa.2211330242
  5. 10.1063/1.359737
  6. 10.1063/1.3636417
  7. 10.1063/1.4798265
  8. 10.1116/1.1914815
  9. 10.1016/j.ccr.2013.04.010
  10. 10.1016/0040-6031(88)87197-1
  11. {'key': 'e_1_2_6_12_2', 'first-page': '1', 'volume': '9', 'author': 'Chase M. W.', 'year': '1998', 'journal-title': 'J. Phys. Chem. Ref. Data, Monograph'} / J. Phys. Chem. Ref. Data, Monograph by Chase M. W. (1998)
  12. 10.1038/nnano.2009.456
  13. 10.1021/am302604e
  14. 10.1080/10584589708221681
  15. 10.1063/1.108438
  16. 10.1063/1.113234
  17. 10.1063/1.121610
  18. 10.1063/1.4811483
  19. 10.1002/adma.200701085
  20. 10.1109/TDMR.2012.2216269
Dates
Type When
Created 11 years, 6 months ago (Feb. 17, 2014, 7:06 a.m.)
Deposited 1 year, 11 months ago (Sept. 11, 2023, 7:01 p.m.)
Indexed 2 days, 18 hours ago (Aug. 19, 2025, 6:55 a.m.)
Issued 11 years, 6 months ago (Feb. 17, 2014)
Published 11 years, 6 months ago (Feb. 17, 2014)
Published Online 11 years, 6 months ago (Feb. 17, 2014)
Published Print 11 years, 2 months ago (June 1, 2014)
Funders 0

None

@article{Park_2014, title={Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes}, volume={8}, ISSN={1862-6270}, url={http://dx.doi.org/10.1002/pssr.201409017}, DOI={10.1002/pssr.201409017}, number={6}, journal={physica status solidi (RRL) – Rapid Research Letters}, publisher={Wiley}, author={Park, Min Hyuk and Kim, Han Joon and Kim, Yu Jin and Jeon, Woojin and Moon, Taehwan and Hwang, Cheol Seong}, year={2014}, month=feb, pages={532–535} }