DOI: 10.1002/pssr.201307015. Screening and interlayer coupling in multilayer MoS<sub>2</sub>

Screening and interlayer coupling in multilayer MoS2

10.1002/pssr.201307015

Crossref journal-article

Wiley

physica status solidi (RRL) – Rapid Research Letters (311)

Abstract

AbstractThe two‐dimensional layered semiconducting di‐chalcogenides are emerging as promising candidates for post‐Si‐CMOS applications owing to their excellent electrostatic integrity and the presence of a finite energy bandgap, unlike graphene. However, in order to unravel the ultimate potential of these materials, one needs to investigate different aspects of carrier transport. In this Letter, we present the first comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back‐gated multilayer MoS2field‐effect transistors. We observe a non‐monotonic trend in the extracted effective field‐effect mobility with layer thickness which is of relevance for the design of high‐performance devices. We also discuss a detailed theoretical model based on Thomas–Fermi charge screening and interlayer coupling in order to explain our experimental observations. Our model is generic and, therefore, is believed to be applicable to any two‐dimensional layered system.magnified imageA model explaining the experimental findings related to screening and interlayer coupling in multilayer MoS2.(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Bibliography

Das, S., & Appenzeller, J. (2013). Screening and interlayer coupling in multilayer MoS2. Physica Status Solidi (RRL) â Rapid Research Letters, 7(4), 268â273. Portico.

Authors 2

Saptarshi Das (first)
Joerg Appenzeller (additional)

References 18 Referenced 155

Dates

Type	When
Created	12 years, 5 months ago (March 6, 2013, 12:19 p.m.)
Deposited	4 months ago (April 29, 2025, 7:22 p.m.)
Indexed	2 weeks ago (Aug. 19, 2025, 6:58 a.m.)
Issued	12 years, 5 months ago (March 6, 2013)
Published	12 years, 5 months ago (March 6, 2013)
Published Online	12 years, 5 months ago (March 6, 2013)
Published Print	12 years, 5 months ago (April 1, 2013)

Funders 1

Nanotechnology Research Initiative (NRI) through a supplement to the Network for Computational Nanotechnology (NCN), supported by National Science Foundation
Awards1
1. EEC-0634750

BibTeX

@article{Das_2013, title={Screening and interlayer coupling in multilayer MoS2}, volume={7}, ISSN={1862-6270}, url={http://dx.doi.org/10.1002/pssr.201307015}, DOI={10.1002/pssr.201307015}, number={4}, journal={physica status solidi (RRL) – Rapid Research Letters}, publisher={Wiley}, author={Das, Saptarshi and Appenzeller, Joerg}, year={2013}, month=mar, pages={268–273} }

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  "abstract": "<jats:title>Abstract</jats:title><jats:p>The two\u2010dimensional layered semiconducting di\u2010chalcogenides are emerging as promising candidates for post\u2010Si\u2010CMOS applications owing to their excellent electrostatic integrity and the presence of a finite energy bandgap, unlike graphene. However, in order to unravel the ultimate potential of these materials, one needs to investigate different aspects of carrier transport. In this Letter, we present the first comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back\u2010gated multilayer MoS<jats:sub>2</jats:sub>field\u2010effect transistors. We observe a non\u2010monotonic trend in the extracted effective field\u2010effect mobility with layer thickness which is of relevance for the design of high\u2010performance devices. We also discuss a detailed theoretical model based on Thomas\u2013Fermi charge screening and interlayer coupling in order to explain our experimental observations. Our model is generic and, therefore, is believed to be applicable to any two\u2010dimensional layered system.</jats:p><jats:p><jats:boxed-text content-type=\"graphic\" position=\"anchor\"><jats:graphic xmlns:xlink=\"http://www.w3.org/1999/xlink\" mimetype=\"image/gif\" position=\"anchor\" specific-use=\"enlarged-web-image\" xlink:href=\"graphic/mrrl0701504.gif\"><jats:alt-text>magnified image</jats:alt-text></jats:graphic></jats:boxed-text></jats:p><jats:p>A model explaining the experimental findings related to screening and interlayer coupling in multilayer MoS<jats:sub>2</jats:sub>.</jats:p><jats:p>(\u00a9 2013 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</jats:p>",
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