DOI: 10.1002/pssr.201004185. Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

10.1002/pssr.201004185

Crossref journal-article

Wiley

physica status solidi (RRL) – Rapid Research Letters (311)

Abstract

AbstractSelf‐standing III–V nanowires (NWs) are promising building blocks for future optoelectronic devices such as LEDs, lasers, photodetectors and solar cells. In this work, we present the results of low temperature photoluminescence (PL) characterization of GaAs NWs grown by Au‐assisted molecular beam epitaxy (MBE), coupled with the transmission electron microscopy (TEM) structural analysis. PL spectra contain exci‐ ton peaks from zincblende (ZB) and wurtzite (WZ) crystal structures of GaAs. The peaks are influenced by the quantum confinement effects. PL bands corresponding to the exciton emission from ZB and WZ crystal phases are identified, relating to the PL peaks at 1.519 eV and 1.478 eV, respectively. The obtained red shift of 41 meV for WZ GaAs should persist in thin NWs as well as in bulk materials. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Bibliography

Novikov, B. V., Serov, S. Yu., Filosofov, N. G., Shtrom, I. V., Talalaev, V. G., Vyvenko, O. F., Ubyivovk, E. V., Samsonenko, Yu. B., Bouravleuv, A. D., Soshnikov, I. P., Sibirev, N. V., Cirlin, G. E., & Dubrovskii, V. G. (2010). Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure. Physica Status Solidi (RRL) â Rapid Research Letters, 4(7), 175â177. Portico.

Authors 13

B. V. Novikov (first)
S. Yu. Serov (additional)
N. G. Filosofov (additional)
I. V. Shtrom (additional)
V. G. Talalaev (additional)
O. F. Vyvenko (additional)
E. V. Ubyivovk (additional)
Yu. B. Samsonenko (additional)
A. D. Bouravleuv (additional)
I. P. Soshnikov (additional)
N. V. Sibirev (additional)
G. E. Cirlin (additional)
V. G. Dubrovskii (additional)

References 17 Referenced 28

Dates

Type	When
Created	15 years, 3 months ago (May 28, 2010, 8:47 a.m.)
Deposited	1 year, 10 months ago (Oct. 15, 2023, 4:44 p.m.)
Indexed	11 months, 4 weeks ago (Aug. 30, 2024, 7:38 a.m.)
Issued	15 years, 1 month ago (July 1, 2010)
Published	15 years, 1 month ago (July 1, 2010)
Published Online	15 years, 1 month ago (July 2, 2010)
Published Print	15 years, 1 month ago (July 1, 2010)

Funders 0

None

BibTeX

@article{Novikov_2010, title={Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure}, volume={4}, ISSN={1862-6270}, url={http://dx.doi.org/10.1002/pssr.201004185}, DOI={10.1002/pssr.201004185}, number={7}, journal={physica status solidi (RRL) – Rapid Research Letters}, publisher={Wiley}, author={Novikov, B. V. and Serov, S. Yu. and Filosofov, N. G. and Shtrom, I. V. and Talalaev, V. G. and Vyvenko, O. F. and Ubyivovk, E. V. and Samsonenko, Yu. B. and Bouravleuv, A. D. and Soshnikov, I. P. and Sibirev, N. V. and Cirlin, G. E. and Dubrovskii, V. G.}, year={2010}, month=jul, pages={175–177} }

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