DOI: 10.1002/pssc.200777905. Optical Hall effect studies on modulation‐doped AlxGa1

Optical Hall effect studies on modulation‐doped AlxGa1–xAs:Si/GaAs quantum wells

10.1002/pssc.200777905

Crossref journal-article

Wiley

physica status solidi c (311)

Abstract

AbstractWe study the temperature (10 K … 293 K) dependence of the optical Hall effect (OHE) in modulationdoped Alx Ga1–x As:Si / GaAs (x = 0.45) superlattice structures with different quantum well thickness (dGaAs = 16.9 nm and dGaAs = 3.7 nm) using generalized magnetooptic ellipsometry at far‐infrared wavelengths. Free electrons are identified within the wells, but not within the doped barriers. The observed OHE can be fully explained within the Drude model and thermionic rate equations. The quantum‐well free electron density (N = 1.3 × 1017 cm–3) increases five times upon sample cooling within the wells with dGaAs = 3.7 nm, and remains constant within the wells with dGaAs = 16.9 nm. We describe this behavior as a steady state of three quantum well electron condensation processes: Coulombactivation of electron states at the Alx Ga1–x As/GaAs interface, quantum‐well‐barrier reservoir interaction, and irreversible electron emission into the host crystal. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Bibliography

Hofmann, T., von Middendorff, C., Gottschalch, V., & Schubert, M. (2008). Optical Hall effect studies on modulationâdoped AlxGa1âxAs:Si/GaAs quantum wells. Physica Status Solidi c, 5(5), 1386â1390. Portico.

Authors 4

T. Hofmann (first)
C. von Middendorff (additional)
V. Gottschalch (additional)
M. Schubert (additional)

References 15 Referenced 2

10.1103/PhysRevLett.48.1559
T.Hofmann C. M.Herzinger C.Krahmer K.Streubel andM.Schubert phys. stat. sol. (a)205(4) DOI 10.1002/pssa.200777904 (2008) (thisconference) (10.1002/pssa.200777904)
M.Schubert Infrared Ellipsometry on Semiconductor Layer Structures: Phonons Plasmons and Polaritons Springer Tracts Mod. Phys. Vol. 209 (Springer Berlin 2004). (10.1007/b11964)
10.1364/JOSAA.20.000347
10.1063/1.2209968
10.1002/andp.200510204
H.ThompkinsandE. A.Irene(Eds.) Handbook of Ellipsometry (William Andrew Publishing Highland Mills 2004).
10.1364/AO.38.000177
10.1016/S0040-6090(97)00841-9
10.1016/S0040-6090(97)00765-7
P.Drude Lehrbuch der Optik (S. Hirzel Leipzig 1900) (English transl. by Longmans Green and Company London 1902; reissued by Dover New York 2005).
{'key': 'e_1_2_1_13_2', 'first-page': '121', 'volume': '18', 'author': 'Einstein A.', 'year': '1917', 'journal-title': 'Phys. Z.'} / Phys. Z. by Einstein A. (1917)
10.1103/PhysRevB.62.7365
10.1103/PhysRevB.64.155206
10.1103/PhysRevB.71.035324

Dates

Type	When
Created	17 years, 5 months ago (March 19, 2008, 1:16 p.m.)
Deposited	1 year, 11 months ago (Sept. 11, 2023, 9:40 a.m.)
Indexed	1 year, 11 months ago (Sept. 12, 2023, 1:41 a.m.)
Issued	17 years, 3 months ago (May 1, 2008)
Published	17 years, 3 months ago (May 1, 2008)
Published Online	17 years, 3 months ago (May 8, 2008)
Published Print	17 years, 3 months ago (May 1, 2008)

Funders 0

None

BibTeX

@article{Hofmann_2008, title={Optical Hall effect studies on modulation‐doped AlxGa1–xAs:Si/GaAs quantum wells}, volume={5}, ISSN={1610-1642}, url={http://dx.doi.org/10.1002/pssc.200777905}, DOI={10.1002/pssc.200777905}, number={5}, journal={physica status solidi c}, publisher={Wiley}, author={Hofmann, T. and von Middendorff, C. and Gottschalch, V. and Schubert, M.}, year={2008}, month=may, pages={1386–1390} }

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