DOI: 10.1002/pssc.200565467. Anisotropy of the Γ‐point effective mass and mobility in hexagonal InN

Anisotropy of the Γ‐point effective mass and mobility in hexagonal InN

10.1002/pssc.200565467

Crossref journal-article

Wiley

physica status solidi c (311)

Abstract

AbstractWe determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 × 1017 cm–3 to 9.5 × 1018 cm–3 using Infrared Magneto‐optic Generalized Ellipsometry. The room‐temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ‐point we estimate m *⊥ = 0.047m 0 and m *‖ = 0.039m 0 for polarization perpendicular and parallel to the c ‐axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c ‐axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N , where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Bibliography

Hofmann, T., Chavdarov, T., Darakchieva, V., Lu, H., Schaff, W. J., & Schubert, M. (2006). Anisotropy of the Îâpoint effective mass and mobility in hexagonal InN. Physica Status Solidi c, 3(6), 1854â1857. Portico.

Authors 6

T. Hofmann (first)
T. Chavdarov (additional)
V. Darakchieva (additional)
H. Lu (additional)
W. J. Schaff (additional)
M. Schubert (additional)

References 13 Referenced 39

10.1063/1.1402649
10.1063/1.1787615
10.1002/pssc.200303135
10.1063/1.1600519
10.1103/PhysRevE.66.021403
M.Schubert Infrared Ellipsometry on Semiconductor Layer Structures (Springer Berlin 2004). (10.1007/b11964)
10.1063/1.1578162
10.1364/JOSAA.20.000347
H.ThompkinsandE. A.Irene(Eds.) Handbook of Ellipsometry (William Andrew Publishing 2004).
10.1063/1.1738520
P. Yu.CardonaandM.Cardona Fundamentals of Semiconductors (Springer New York 1999). (10.1007/978-3-662-03848-2)
C.Pidgeon in: Handbook on Semiconductors edited by M. Balkanski (North‐Holland Amsterdam 1980).
10.1103/PhysRevB.62.7365

Dates

Type	When
Created	19 years, 3 months ago (May 15, 2006, 10:15 a.m.)
Deposited	1 year, 10 months ago (Oct. 17, 2023, 1:21 p.m.)
Indexed	1 year ago (Aug. 13, 2024, 7:13 a.m.)
Issued	19 years, 2 months ago (June 1, 2006)
Published	19 years, 2 months ago (June 1, 2006)
Published Online	19 years, 2 months ago (June 12, 2006)
Published Print	19 years, 2 months ago (June 1, 2006)

Funders 0

None

BibTeX

@article{Hofmann_2006, title={Anisotropy of the Γ‐point effective mass and mobility in hexagonal InN}, volume={3}, ISSN={1610-1642}, url={http://dx.doi.org/10.1002/pssc.200565467}, DOI={10.1002/pssc.200565467}, number={6}, journal={physica status solidi c}, publisher={Wiley}, author={Hofmann, T. and Chavdarov, T. and Darakchieva, V. and Lu, H. and Schaff, W. J. and Schubert, M.}, year={2006}, month=jun, pages={1854–1857} }

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