DOI: 10.1002/pssc.200565308. Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

10.1002/pssc.200565308

Crossref journal-article

Wiley

physica status solidi c (311)

Abstract

AbstractTo improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20% more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Bibliography

Lee, J., Oh, J., Park, J., Kim, J., Kim, Y., Lee, J., & Cho, H. (2006). Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire. Physica Status Solidi c, 3(6), 2169â2173. Portico.

Authors 7

Jae‐Hoon Lee (first)
Jeong‐Tak Oh (additional)
Jin‐Sub Park (additional)
Je‐Won Kim (additional)
Yong‐Chun Kim (additional)
Jeong‐Wook Lee (additional)
Hyung‐Koun Cho (additional)

References 8 Referenced 41

10.1143/JJAP.37.L479
10.1143/JJAP.40.L583
10.1143/JJAP.41.L1431
10.1016/j.jcrysgro.2003.10.009
{'issue': '5', 'key': 'e_1_2_1_6_2', 'volume': '8', 'author': 'Lee J. H.', 'year': '2003', 'journal-title': 'MRS Internet J. Nitride Semicond. Res.'} / MRS Internet J. Nitride Semicond. Res. by Lee J. H. (2003)
10.1002/pssc.200461337
{'key': 'e_1_2_1_8_2', 'first-page': 'E3.32.1', 'volume': '831', 'author': 'Kim S. W.', 'year': '2005', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. by Kim S. W. (2005)
10.1002/1521-3951(200109)227:1<1::AID-PSSB1>3.0.CO;2-Q

Dates

Type	When
Created	19 years, 3 months ago (May 17, 2006, 3:51 a.m.)
Deposited	1 year, 10 months ago (Oct. 17, 2023, 1:19 p.m.)
Indexed	5 months ago (March 22, 2025, 4:55 a.m.)
Issued	19 years, 2 months ago (June 1, 2006)
Published	19 years, 2 months ago (June 1, 2006)
Published Online	19 years, 2 months ago (June 12, 2006)
Published Print	19 years, 2 months ago (June 1, 2006)

Funders 0

None

BibTeX

@article{Lee_2006, title={Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire}, volume={3}, ISSN={1610-1642}, url={http://dx.doi.org/10.1002/pssc.200565308}, DOI={10.1002/pssc.200565308}, number={6}, journal={physica status solidi c}, publisher={Wiley}, author={Lee, Jae‐Hoon and Oh, Jeong‐Tak and Park, Jin‐Sub and Kim, Je‐Won and Kim, Yong‐Chun and Lee, Jeong‐Wook and Cho, Hyung‐Koun}, year={2006}, month=jun, pages={2169–2173} }

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