Abstract
AbstractGood detection efficiency and high energy‐resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X‐ray and gamma‐ray detection applications such as medical and industrial imaging, industrial gauging and non‐destructive testing, security and monitoring, nuclear safeguards and non‐proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd1−xZnxTe‐based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd1−xZnxTe detector performance. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
References
26
Referenced
387
-
K.Zanio Cadmium Telluride Semiconductors and Semimetals Vol. 13 (Academic Press New York 1978).
(
10.1016/S0080-8784(08)60064-2
) 10.1063/1.1663661
- G. F.Knoll Radiation Detection and Measurement (Wiley New York 1979).
10.1063/1.112523
10.1103/PhysRevLett.75.156
10.1016/S0168-9002(99)00005-4
10.1016/S0022-0248(98)00738-6
10.1016/S0927-796X(97)00008-9
10.1109/TNS.2002.1039650
10.1103/PhysRevB.66.155211
10.1103/PhysRevB.47.15578
10.1103/PhysRevB.51.10619
- J.Greenberg(private communication).
- D. J.Williams in: Properties of Narrow Gap Cadmium‐based Compounds edited by P. Capper EMIS Datareview Series No. 10 (INSPEC London 1994).
10.1103/PhysRevB.26.2250
10.1016/S0168-9002(99)00607-5
10.1117/12.453826
10.1117/12.457056
10.1007/s11664-999-0085-z
10.1007/s11664-003-0069-3
10.1016/S0022-0248(98)00798-2
10.1063/1.366946
{'key': 'e_1_2_1_24_2', 'first-page': '1', 'volume': '3446', 'author': 'Szeles Cs.', 'year': '1998', 'journal-title': 'SPIE Proceedings Series'}
/ SPIE Proceedings Series by Szeles Cs. (1998)10.1063/1.1502922
10.1109/TNS.2002.801705
10.1007/s11664-003-0145-8
Dates
Type | When |
---|---|
Created | 21 years, 6 months ago (Feb. 19, 2004, 8:09 a.m.) |
Deposited | 1 year, 10 months ago (Oct. 8, 2023, 1:59 a.m.) |
Indexed | 1 day, 20 hours ago (Aug. 19, 2025, 6:40 a.m.) |
Issued | 21 years, 6 months ago (Feb. 11, 2004) |
Published | 21 years, 6 months ago (Feb. 11, 2004) |
Published Online | 21 years, 6 months ago (Feb. 11, 2004) |
Published Print | 21 years, 5 months ago (March 1, 2004) |
@article{Szeles_2004, title={CdZnTe and CdTe materials for X‐ray and gamma ray radiation detector applications}, volume={241}, ISSN={1521-3951}, url={http://dx.doi.org/10.1002/pssb.200304296}, DOI={10.1002/pssb.200304296}, number={3}, journal={physica status solidi (b)}, publisher={Wiley}, author={Szeles, Csaba}, year={2004}, month=feb, pages={783–790} }