DOI: 10.1002/pssb.19690330134. X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion Implantation

X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion Implantation

10.1002/pssb.19690330134

Crossref journal-article

Wiley

physica status solidi (b) (311)

Abstract

AbstractX‐ray interference fringes observed in X‐ray topographs of silicon crystals bombarded with high energy ions (dose > 1015 ions/cm2) are described. The X‐ray fringes are used to analyze the deformation state of the crystal. It is shown that the bombarded crystal is a special kind of bicrystal composed of a thick perfect bulk crystal topped by a thin practically perfect layer crystal. Both crystals have the same crystallographic orientation and the same lattice constant but are separated by a small rigid body displacement. Contrast and geometry of the observed X‐ray patterns agree with the theoretical patterns calculated by Bonse and Hart [1] on the basis of a layer/bulk bicrystal model, and are also supported through transmission electron microscopy results. The ion range calculated from the interference fringes is in good agreement with the experimentally determined range.

Bibliography

Bonse, U., Hart, M., & Schwuttke, G. H. (1969). XâRay Investigation of Lattice Deformations in Silicon Induced through HighâEnergy Ion Implantation. Physica Status Solidi (b), 33(1), 361â374. Portico.

Authors 3

U. Bonse (first)
M. Hart (additional)
G. H. Schwuttke (additional)

References 15 Referenced 81

10.1002/pssb.19690330133
10.1149/1.2411148
{'key': 'e_1_2_1_4_2', 'first-page': '406', 'volume-title': 'Radiation Effects in Semiconductors', 'author': 'Schwuttke G. H.', 'year': '1968'} / Radiation Effects in Semiconductors by Schwuttke G. H. (1968)
A.AuthierandM. T.Montenay‐Garestier in: “Effects des rayonnements sur les semi‐conducteurs” Dunod Paris1965(p.79).
10.1007/BF01375325
{'key': 'e_1_2_1_7_2', 'first-page': '419', 'volume': '16', 'author': 'Penning P.', 'year': '1961', 'journal-title': 'Philips Res. Rep.'} / Philips Res. Rep. by Penning P. (1961)
10.1063/1.1735048
10.1063/1.1714567
10.1007/BF01329036
{'issue': '14', 'key': 'e_1_2_1_11_2', 'volume': '33', 'author': 'Lindhard J.', 'year': '1963', 'journal-title': 'Mat. Fys. Medd. Danske Vid. Selsk.'} / Mat. Fys. Medd. Danske Vid. Selsk. by Lindhard J. (1963)
10.1103/PhysRev.165.376
10.1107/S0567739468001142 / Acta cryst. by Simon J. D. (1968)
10.1063/1.1754212
10.1007/BF01327264
G. H.SchwuttkeandK.Brack to be published.

Dates

Type	When
Created	18 years, 1 month ago (July 9, 2007, 6:50 p.m.)
Deposited	1 year, 10 months ago (Sept. 27, 2023, 2:10 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 2:58 a.m.)
Issued	56 years, 7 months ago (Jan. 1, 1969)
Published	56 years, 7 months ago (Jan. 1, 1969)
Published Online	19 years, 4 months ago (March 31, 2006)
Published Print	56 years, 7 months ago (Jan. 1, 1969)

Funders 0

None

BibTeX

@article{Bonse_1969, title={X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion Implantation}, volume={33}, ISSN={1521-3951}, url={http://dx.doi.org/10.1002/pssb.19690330134}, DOI={10.1002/pssb.19690330134}, number={1}, journal={physica status solidi (b)}, publisher={Wiley}, author={Bonse, U. and Hart, M. and Schwuttke, G. H.}, year={1969}, month=jan, pages={361–374} }

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