DOI: 10.1002/pssb.19610010609. Absorption freier Ladungsträger in CdS

10.1002/pssb.19610010609

Crossref journal-article

Wiley

physica status solidi (b) (311)

Abstract

AbstractDie Absorption freier Ladungsträger in n‐CdS‐Kristallen wurde für Trägerkonzentrationen von einigen 1017/cm3 bei Raumtemperatur und 90 °K untersucht. Bei 90 °K steigt der Absorptionskoeffizient mit λ3 an, wie es von der Meyerschen Theorie für Streuung an ionisierten Störstellen vorausgesagt wird. Bei Raumtemperatur liegt bereits ein Anteil thermischer Streuung vor. Aus der Absorption freier Träger wurde die effektive Masse zu m* = (0,19 ± 0,02) m bestimmt. Ferner wird gezeigt, daß bei der Berechnung von Trägerdichten aus der Beziehung \documentclass{article}\pagestyle{empty}\begin{document}$ R_H = - \frac{r}{{ne}} $\end{document} (RH = Hallkonstante) der Faktor r für Störstellenstreuung konzentrationsabhängig ist. Für diese Abhängigkeit wird eine Beziehung abgeleitet.

Bibliography

Groth, R., & Memming, R. (1961). Absorption freier LadungstrÃ¤ger in CdS. Physica Status Solidi (b), 1(6), 650â655. Portico.

Authors 2

R. Groth (first)
R. Memming (additional)

References 15 Referenced 6

10.1016/S0031-8914(54)80244-8
10.1364/JOSA.50.000118
10.1103/PhysRev.114.59
{'key': 'e_1_2_1_5_2', 'first-page': '255', 'volume': '3', 'author': 'Dixon J. R.', 'year': '1958', 'journal-title': 'Bull. Amer. Phys. Soc. Ser. II'} / Bull. Amer. Phys. Soc. Ser. II by Dixon J. R. (1958)
{'key': 'e_1_2_1_6_2', 'first-page': '425', 'volume': '12', 'author': 'Planker K. J.', 'year': '1960', 'journal-title': 'Z. Angew. Phys.'} / Z. Angew. Phys. by Planker K. J. (1960)
10.1016/0022-3697(59)90124-6
10.1103/PhysRev.112.298
10.1103/PhysRev.120.379
10.1103/PhysRev.120.376
10.1103/PhysRev.93.693
W.Shockley Electrons and Holes in Semiconductors Van Nostrand New York1960.
J. J.HopfieldundD. G.Thomas Proc. Int. Conference on Semiconductor Physics Prague1960 13.
W. W.PiperundH. E.Halsted Proc. Int. Conference on Semiconductor Physics Prague1960 V2.
{'key': 'e_1_2_1_15_2', 'volume-title': 'Semiconductors', 'author': 'Smith R. A.', 'year': '1959'} / Semiconductors by Smith R. A. (1959)
{'key': 'e_1_2_1_16_2', 'first-page': '258A', 'volume': '69', 'author': 'Conwell E.', 'year': '1946', 'journal-title': 'Phys. Rev.'} / Phys. Rev. by Conwell E. (1946)

Dates

Type	When
Created	18 years, 1 month ago (July 9, 2007, 1:16 p.m.)
Deposited	1 year, 10 months ago (Oct. 17, 2023, 9:30 a.m.)
Indexed	1 year, 10 months ago (Oct. 19, 2023, 9:22 a.m.)
Issued	64 years, 8 months ago (Jan. 1, 1961)
Published	64 years, 8 months ago (Jan. 1, 1961)
Published Online	19 years, 5 months ago (March 30, 2006)
Published Print	64 years, 8 months ago (Jan. 1, 1961)

Funders 0

None

BibTeX

@article{Groth_1961, title={Absorption freier Ladungsträger in CdS}, volume={1}, ISSN={1521-3951}, url={http://dx.doi.org/10.1002/pssb.19610010609}, DOI={10.1002/pssb.19610010609}, number={6}, journal={physica status solidi (b)}, publisher={Wiley}, author={Groth, R. and Memming, R.}, year={1961}, month=jan, pages={650–655} }

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