DOI: 10.1002/pssa.2210860126. Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques

Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques

10.1002/pssa.2210860126

Crossref journal-article

Wiley

Physica Status Solidi (a) (311)

Bibliography

Bender, H. (1984). Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques. Physica Status Solidi (a), 86(1), 245â261.

Authors 1

H. Bender (first)

References 26 Referenced 110

Inst. Phys. Conf. Ser. No. 46, 303 (1978). by Cazcarra (1978)
10.7567/JJAPS.18S1.179 / Japan. J. appl. Phys. by Takaoka (1979)
10.1063/1.327419 / J. appl. Phys. by Shimura (1980)
10.1002/pssa.2210560123 / Phys. stat. sol. (a) by Tempelhoff (1979)
, and , in: Semiconductor Silicon 1981, Ed. , and , The Electrochem. Soc., Pennington 1981 (p. 282). / Semiconductor Silicon 1981 by Inoue (1981)
10.1016/0022-0248(82)90474-2 / J. Crystal Growth by Matsushita (1982)
10.1063/1.332411 / J. appl. Phys. by Yamamoto (1983)
, , , and , Inst. Phys. Conf. Ser. No. 67, 65 (1983). by Ponce (1983)
10.1063/1.333178 / J. appl. Phys. by Bourret (1984)
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{'key': '10.1002/pssa.2210860126-BIB11', 'first-page': '148', 'volume': '116B', 'author': 'Claeys', 'year': '1983', 'journal-title': 'Physica (Utrecht)'} / Physica (Utrecht) by Claeys (1983)
{'key': '10.1002/pssa.2210860126-BIB12', 'first-page': 'c4-261', 'volume': '44', 'author': 'Bender', 'year': '1983', 'journal-title': 'J. Physique'} / J. Physique by Bender (1983)
, , , , and , in: Proc. 7th Internat. Conf. High Voltage Electron Microscopy, Ed. and , Univ. of California, Berkely 1983 (p. 389). / Proc. 7th Internat. Conf. High Voltage Electron Microscopy by Bender (1983)
Proc. 7th Internat. Conf. High Voltage Electron Microscopy Ph. D. Thesis, Universitaire Instelling Antwerpen, 1984. by Bender (1984)
, , , , and , J. electronic Mater., to be published. by Bender
10.1016/0304-3991(83)90010-4 / Ultramicroscopy by Vanhellemont (1983)
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10.1080/14786437608223798 / Phil. Mag. by Tan (1976)
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, and , Inst. Phys. Conf. Ser. No. 67, 21 (1983). by Hutchison (1983)
10.1080/01418618208243899 / Phil. Mag. by Bourret (1982)
, , , , and , in: Lecture Notes in Physics, Vol. 175, Defect Complexes in Semiconductor Structures, Ed. , , and , Springer-Verlag, Berlin 1983 (p. 134). (10.1007/3-540-11986-8_11) / Defect Complexes in Semiconductor Structures by Bender (1983)
10.1063/1.89629 / Appl. Phys. Letters by Hu (1977)
in: Defects in Semiconductors, Ed. and , North-Holland Publ. Co., New York 1981 (p. 163). / Defects in Semiconductors by Tan (1981)
, and , Defects in Semiconductors (p. 173). by Föll

Dates

Type	When
Created	18 years, 7 months ago (Jan. 12, 2007, 6:12 p.m.)
Deposited	4 years, 1 month ago (July 4, 2021, 12:07 p.m.)
Indexed	4 months ago (April 16, 2025, 2:14 a.m.)
Issued	40 years, 9 months ago (Nov. 16, 1984)
Published	40 years, 9 months ago (Nov. 16, 1984)
Published Print	40 years, 9 months ago (Nov. 16, 1984)

Funders 0

None

BibTeX

@article{Bender_1984, title={Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques}, volume={86}, ISSN={1521-396X}, url={http://dx.doi.org/10.1002/pssa.2210860126}, DOI={10.1002/pssa.2210860126}, number={1}, journal={Physica Status Solidi (a)}, publisher={Wiley}, author={Bender, H.}, year={1984}, month=nov, pages={245–261} }

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