DOI: 10.1002/pssa.200778856. Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

10.1002/pssa.200778856

Crossref journal-article

Wiley

physica status solidi (a) (311)

Abstract

AbstractUndoped and Neodymium‐doped gallium oxide (Ga2O3) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 °C by radiofrequency magnetron sputtering. Post‐annealing treatments were carried out at 900 °C and 1000 °C. The obtained films were (400) textured and a grain size of a few tens of nanometres was found. Optical and electrical characterizations led to a figure of merit of about 1.9 × 10–4. These films were successfully doped with Neodymium by a co‐sputtering method. The photoluminescence experiments for the Nd‐doped β‐Ga2O3 films clearly showed the rare‐earth emitting signature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Bibliography

Marie, P., Portier, X., & Cardin, J. (2008). Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering. Physica Status Solidi (a), 205(8), 1943â1946. Portico.

Authors 3

P. Marie (first)
X. Portier (additional)
J. Cardin (additional)

References 17 Referenced 58

10.1063/1.359055
10.1088/0268-1242/20/4/004
10.1016/0925-4005(91)80148-D
10.1063/1.111452
10.1016/j.tsf.2003.10.139
A.ShionoyaandW. M.Yen Phosphor Handbook (CRC Press Boca Raton FL 1998).
10.1016/S0022-2313(99)00589-X
10.1063/1.100961
10.1088/0022-3727/35/5/304
T.Minami H.Yamada Y.Kubota T.Myata andY.Sakagami Proc. of the Fourth International Display Workshop 1997 p. 605.
10.1103/PhysRevB.34.7018
10.1002/andp.19354160705
10.1063/1.370307
10.1063/1.1985975
{'key': 'e_1_2_1_16_2', 'first-page': 'A21.10.1', 'volume': '862', 'author': 'Raneiro L.', 'year': '2005', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. by Raneiro L. (2005)
10.1016/j.tsf.2005.12.057
10.1016/j.tsf.2005.07.168

Dates

Type	When
Created	17 years, 1 month ago (July 9, 2008, 8:10 a.m.)
Deposited	1 year, 9 months ago (Nov. 22, 2023, 11:36 a.m.)
Indexed	1 month, 2 weeks ago (July 5, 2025, 5:04 a.m.)
Issued	17 years ago (Aug. 1, 2008)
Published	17 years ago (Aug. 1, 2008)
Published Online	17 years ago (Aug. 4, 2008)
Published Print	17 years ago (Aug. 1, 2008)

Funders 0

None

BibTeX

@article{Marie_2008, title={Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering}, volume={205}, ISSN={1862-6319}, url={http://dx.doi.org/10.1002/pssa.200778856}, DOI={10.1002/pssa.200778856}, number={8}, journal={physica status solidi (a)}, publisher={Wiley}, author={Marie, P. and Portier, X. and Cardin, J.}, year={2008}, month=aug, pages={1943–1946} }

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