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Physica Status Solidi (a) (311)
Bibliography

Krause, G. O. (1970). Epitaxial growth behavior of Ge on Si {111} surfaces. Physica Status Solidi (a), 3(4), 907–911.

Authors 1
  1. G. O. Krause (first)
References 7 Referenced 18
  1. 10.1063/1.1754999 / Appl. Phys. Letters by Takeishi (1967)
  2. 10.1143/JJAP.5.639B / Japan. J. appl. Phys. by Kimura (1966)
  3. 10.1143/JJAP.7.562 / Japan. J. appl. Phys. by Fujimoto (1968)
  4. 10.1143/JJAP.7.821 / Japan. J. appl. Phys. by Itoh (1968)
  5. 10.1063/1.1710223 / J. appl. Phys. by Reenstra (1967)
  6. 10.1016/0039-6028(69)90062-4 / Surface Sci. by Joyce (1969)
  7. 10.1002/pssa.19700030407 / phys. stat. sol. (a) by Krause (1970)
Dates
Type When
Created 18 years, 7 months ago (Jan. 11, 2007, 1:16 p.m.)
Deposited 4 years, 2 months ago (July 4, 2021, 2:14 p.m.)
Indexed 1 year, 7 months ago (Feb. 5, 2024, 9:20 a.m.)
Issued 54 years, 8 months ago (Dec. 16, 1970)
Published 54 years, 8 months ago (Dec. 16, 1970)
Published Print 54 years, 8 months ago (Dec. 16, 1970)
Funders 0

None

@article{Krause_1970, title={Epitaxial growth behavior of Ge on Si {111} surfaces}, volume={3}, ISSN={1521-396X}, url={http://dx.doi.org/10.1002/pssa.19700030408}, DOI={10.1002/pssa.19700030408}, number={4}, journal={Physica Status Solidi (a)}, publisher={Wiley}, author={Krause, G. O.}, year={1970}, month=dec, pages={907–911} }