DOI: 10.1002/pip.494. Properties of 19.2% efficiency ZnO/CdS/CuInGaSe<sub>2</sub>thin‐film solar cells

Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2thin‐film solar cells

10.1002/pip.494

Crossref journal-article

Wiley

Progress in Photovoltaics: Research and Applications (311)

Abstract

AbstractWe report the growth and characterization of record‐efficiency ZnO/CdS/CuInGaSe2thin‐film solar cells. Conversion efficiencies exceeding 19% have been achieved for the first time, and this result indicates that the 20% goal is within reach. Details of the experimental procedures are provided, and material and device characterization data are presented. Published in 2003 by John Wiley & Sons, Ltd.

Bibliography

Ramanathan, K., Contreras, M. A., Perkins, C. L., Asher, S., Hasoon, F. S., Keane, J., Young, D., Romero, M., Metzger, W., Noufi, R., Ward, J., & Duda, A. (2003). Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2thinâfilm solar cells. Progress in Photovoltaics: Research and Applications, 11(4), 225â230. Portico.

Authors 12

Kannan Ramanathan (first)
Miguel A. Contreras (additional)
Craig L. Perkins (additional)
Sally Asher (additional)
Falah S. Hasoon (additional)
James Keane (additional)
David Young (additional)
Manuel Romero (additional)
Wyatt Metzger (additional)
Rommel Noufi (additional)
James Ward (additional)
Anna Duda (additional)

References 6 Referenced 902

10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO;2-G
UllalHS ZweibelK von RoedernBG.Polycrystalline thin‐film photovoltaic technologies: from the laboratory to commercialization.Proceedings of the 28th IEEE Photovoltaic Specialists' Conference Anchorage 2000;418–423. (10.1109/PVSC.2000.915857)
RamanathanK WiesnerH AsherS NilesD BhattacharyaR KeaneJ ContrerasMA NoufiR.High efficiency thin film solar cells without intermediate buffer layers.Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion Vienna 1998;477–481.
10.1016/S0927-0248(00)00282-8
GaborAM TuttleJR SwartzlanderA TennantAL ContrerasMA NoufiR.Bandgap engineering in Cu(In Ga)Se2thin film solar cells grown from (In Ga)2Se3precursors.Proceedings of the 1st World Conference on Photovoltaic Energy Conversion Hawaii 1994;83–86. (10.1109/WCPEC.1994.519813)
LundbergO BodegardM MalmstromJ StoltL.Influence of the Cu(In Ga)Se2thickness and Ga grading on solar cell performance.Progress in Photovoltaics: Research and Applications2003;11:77–88. (10.1002/pip.462)

Dates

Type	When
Created	22 years, 2 months ago (May 28, 2003, 6:03 a.m.)
Deposited	8 months, 1 week ago (Dec. 12, 2024, 2:14 p.m.)
Indexed	40 minutes ago (Aug. 23, 2025, 7:18 p.m.)
Issued	22 years, 3 months ago (May 23, 2003)
Published	22 years, 3 months ago (May 23, 2003)
Published Online	22 years, 3 months ago (May 23, 2003)
Published Print	22 years, 2 months ago (June 1, 2003)

Funders 0

None

BibTeX

@article{Ramanathan_2003, title={Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2thin‐film solar cells}, volume={11}, ISSN={1099-159X}, url={http://dx.doi.org/10.1002/pip.494}, DOI={10.1002/pip.494}, number={4}, journal={Progress in Photovoltaics: Research and Applications}, publisher={Wiley}, author={Ramanathan, Kannan and Contreras, Miguel A. and Perkins, Craig L. and Asher, Sally and Hasoon, Falah S. and Keane, James and Young, David and Romero, Manuel and Metzger, Wyatt and Noufi, Rommel and Ward, James and Duda, Anna}, year={2003}, month=may, pages={225–230} }

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