DOI: 10.1002/jrs.2430. A complete Raman mapping of phase transitions in Si under indentation

A complete Raman mapping of phase transitions in Si under indentation

10.1002/jrs.2430

Crossref journal-article

Wiley

Journal of Raman Spectroscopy (311)

Abstract

AbstractCrystalline Si substrates are studied for pressure‐induced phase transformation under indentation at room temperature (RT) using a Berkovich tip. Raman spectroscopy, as a nondestructive tool, is used for the identification of the transformed phases. Raman lines as well as area mapping are used for locating the phases in the indented region. Calculation of pressure contours in the indented region is used for understanding the phase distribution. We report here a comprehensive study of all the phases of Si, reported so far, leading to possible understanding of material properties useful for possible electromechanical applications. As a major finding, distribution of the amorphous phase in the indented region deviates from the conventional wisdom of being in the central region alone. We present phase mapping results for both Si(100) and Si(111) substrates. Copyright © 2009 John Wiley & Sons, Ltd.

Bibliography

Das, C. R., Hsu, H. C., Dhara, S., Bhaduri, A. K., Raj, B., Chen, L. C., Chen, K. H., Albert, S. K., Ray, A., & Tzeng, Y. (2009). A complete Raman mapping of phase transitions in Si under indentation. Journal of Raman Spectroscopy, 41(3), 334â339. Portico.

Authors 10

C. R. Das (first)
H. C. Hsu (additional)
S. Dhara (additional)
A. K. Bhaduri (additional)
B. Raj (additional)
L. C. Chen (additional)
K. H. Chen (additional)
S. K. Albert (additional)
A. Ray (additional)
Y. Tzeng (additional)

References 28 Referenced 19

Dates

Type	When
Created	15 years, 11 months ago (Sept. 1, 2009, 5:55 a.m.)
Deposited	1 year, 9 months ago (Nov. 21, 2023, 6:09 a.m.)
Indexed	1 day, 12 hours ago (Aug. 21, 2025, 2:19 p.m.)
Issued	15 years, 11 months ago (Sept. 1, 2009)
Published	15 years, 11 months ago (Sept. 1, 2009)
Published Online	15 years, 11 months ago (Sept. 1, 2009)
Published Print	15 years, 5 months ago (March 1, 2010)

Funders 0

None

BibTeX

@article{Das_2009, title={A complete Raman mapping of phase transitions in Si under indentation}, volume={41}, ISSN={1097-4555}, url={http://dx.doi.org/10.1002/jrs.2430}, DOI={10.1002/jrs.2430}, number={3}, journal={Journal of Raman Spectroscopy}, publisher={Wiley}, author={Das, C. R. and Hsu, H. C. and Dhara, S. and Bhaduri, A. K. and Raj, B. and Chen, L. C. and Chen, K. H. and Albert, S. K. and Ray, A. and Tzeng, Y.}, year={2009}, month=sep, pages={334–339} }

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