DOI: 10.1002/jnm.735. A three‐dimensional Monte Carlo model for the simulation of nanoelectronic devices

A three‐dimensional Monte Carlo model for the simulation of nanoelectronic devices

10.1002/jnm.735

Crossref journal-article

Wiley

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (311)

Abstract

AbstractWe present a three‐dimensional (3D) semi‐classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two‐dimensional (2D) models. The advantages of our model, in terms of accuracy in modelling the physics behind the operation of nanodevices, are presented by applying it to T‐branch junctions based on InGaAs/InAlAs heterostructures. Simulation of a T‐branch junction with a Schottky gate terminal is presented, using both 2D and 3D models, demonstrating the necessity of using 3D simulation models to study the physics of complex‐geometry nanostructures. Copyright © 2009 John Wiley & Sons, Ltd.

Bibliography

Sadi, T., & Thobel, J. âL. (2009). A threeâdimensional Monte Carlo model for the simulation of nanoelectronic devices. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 23(3), 200â214. Portico.

Authors 2

T. Sadi (first)
J.‐L. Thobel (additional)

References 21 Referenced 5

10.1109/TNANO.2006.885030
10.1063/1.2344849
10.1088/0957-4484/14/2/303
10.1209/epl/i1998-00562-1
10.1063/1.1396626
10.1063/1.1447316
10.1109/LED.2004.824841
10.1088/0953-8984/17/29/R01
GallooJS PichonatE RoelensY BollaertS WallartX CappyA MateosJ GonzalesT.Transition from ballistic to ohmic transport in T‐branch junctions at room temperature in GaInAs/AlInAs heterostructures. Proceedings of International Conference on Indium Phosphide and Related Materials Kagoshima Japan 2004;378–381. (10.1109/ICIPRM.2004.1442734)
10.1007/978-3-7091-6963-6
10.1016/0378-4363(83)90497-7
10.1109/T-ED.1985.22291
10.1063/1.336070
10.1007/978-3-642-97675-9
10.1109/TED.2006.877698
10.1109/LED.2007.903920
{'volume-title': 'Physics of Semiconductor Devices', 'year': '1969', 'author': 'Sze SM', 'key': 'e_1_2_1_18_2'} / Physics of Semiconductor Devices by Sze SM (1969)
10.1088/0268-1242/22/6/014
10.1063/1.1852711
10.1002/pssc.200776512
10.1109/TED.2003.815858

Dates

Type	When
Created	15 years, 8 months ago (Dec. 8, 2009, 9:54 a.m.)
Deposited	6 months, 2 weeks ago (Feb. 13, 2025, 1:01 p.m.)
Indexed	6 months, 2 weeks ago (Feb. 13, 2025, 1:40 p.m.)
Issued	15 years, 8 months ago (Dec. 8, 2009)
Published	15 years, 8 months ago (Dec. 8, 2009)
Published Online	15 years, 8 months ago (Dec. 8, 2009)
Published Print	15 years, 3 months ago (May 1, 2010)

Funders 0

None

BibTeX

@article{Sadi_2009, title={A three‐dimensional Monte Carlo model for the simulation of nanoelectronic devices}, volume={23}, ISSN={1099-1204}, url={http://dx.doi.org/10.1002/jnm.735}, DOI={10.1002/jnm.735}, number={3}, journal={International Journal of Numerical Modelling: Electronic Networks, Devices and Fields}, publisher={Wiley}, author={Sadi, T. and Thobel, J.‐L.}, year={2009}, month=dec, pages={200–214} }

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