Abstract
AbstractPlasmachemical etching of Aluminium in chlorine containing discharges is discussed from a thermochemical point of view. A model of Al etching is proposed, in which diffusion of reaction products through the carbon‐rich deposite layer is considered to be rate‐limiting. The model quantitatively describes the dependence of the etch reaction on different process parameters of the CCl4‐plasma.
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Dates
Type | When |
---|---|
Created | 18 years, 7 months ago (Jan. 13, 2007, 7:49 a.m.) |
Deposited | 1 year, 10 months ago (Oct. 20, 2023, 6:40 p.m.) |
Indexed | 1 year, 10 months ago (Oct. 21, 2023, 7:13 a.m.) |
Issued | 39 years, 6 months ago (March 1, 1986) |
Published | 39 years, 6 months ago (March 1, 1986) |
Published Online | 19 years, 6 months ago (Feb. 19, 2006) |
Published Print | 39 years, 6 months ago (March 1, 1986) |
@article{Sameith_1986, title={Dry Patterning of Al and Al Alloys}, volume={21}, ISSN={1521-4079}, url={http://dx.doi.org/10.1002/crat.2170210315}, DOI={10.1002/crat.2170210315}, number={3}, journal={Crystal Research and Technology}, publisher={Wiley}, author={Sameith, D. and Tiller, H.‐J. and Breitbarth, F.‐W.}, year={1986}, month=mar, pages={407–412} }