DOI: 10.1002/crat.201000341. Czochralski growth and characterization of β‐Ga<sub>2</sub>O<sub>3</sub> single crystals

Czochralski growth and characterization of β‐Ga2O3 single crystals

10.1002/crat.201000341

Crossref journal-article

Wiley

Crystal Research and Technology (311)

Abstract

AbstractTransparent semiconducting β‐Ga2O3 single crystals were grown by the Czochralski method from an iridium crucible under a dynamic protective atmosphere to control partial pressures of volatile species of Ga2O3. Thermodynamic calculations on different atmospheres containing CO2, Ar and O2 reveal that CO2 growth atmosphere combined with overpressure significantly decreases evaporation of volatile Ga2O3 species without any harm to iridium crucible. It has been found that CO2, besides providing high oxygen concentration at high temperatures, is also acting as a minor reducing agent for Ga2O3. Different coloration of obtained crystals as well as optical and electrical properties are directly correlated with growth conditions (atmosphere, pressure and temperature gradients), but not with residual impurities. Typical electrical properties of the n‐type β‐Ga2O3 crystals at room temperature are: ϱ = 0.1 – 0.3 Ωcm, µn,Hall = 110 ‐ 150 cm2V‐1s‐1, nHall = 2 ‐ 6 × 1017 cm‐3 and EIonisation = 30 ‐ 40 meV. A decrease of transmission in the IR‐region is directly correlated with the free carrier concentration and can be effectively modulated by the dynamic growth atmosphere. Electron paramagnetic resonance (EPR) spectra exhibit an isotropic shallow donor level and anisotropic defect level. According to differential thermal analysis (DTA) measurements, there is substantially no mass change of β‐Ga2O3 crystals below 1200 °C (i.e. no decomposition) under oxidizing or neutral atmosphere, while the mass gradually decreases with temperature above 1200 °C. High resolution transmission electron microscopy (HRTEM) images at atomic resolution show the presence of vacancies, which can be attributed to Ga or O sites, and interstitials, which can likely be attributed to Ga atoms. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Bibliography

Galazka, Z., Uecker, R., Irmscher, K., Albrecht, M., Klimm, D., Pietsch, M., BrÃ¼tzam, M., Bertram, R., Ganschow, S., & Fornari, R. (2010). Czochralski growth and characterization of Î²âGa2O3 single crystals. Crystal Research and Technology, 45(12), 1229â1236. Portico.

Authors 10

Z. Galazka (first)
R. Uecker (additional)
K. Irmscher (additional)
M. Albrecht (additional)
D. Klimm (additional)
M. Pietsch (additional)
M. Brützam (additional)
R. Bertram (additional)
S. Ganschow (additional)
R. Fornari (additional)

References 38 Referenced 423

Dates

Type	When
Created	14 years, 11 months ago (Aug. 30, 2010, 2:20 a.m.)
Deposited	1 year, 11 months ago (Sept. 12, 2023, 3:36 p.m.)
Indexed	1 day, 7 hours ago (Aug. 21, 2025, 1:36 p.m.)
Issued	14 years, 11 months ago (Aug. 26, 2010)
Published	14 years, 11 months ago (Aug. 26, 2010)
Published Online	14 years, 11 months ago (Aug. 26, 2010)
Published Print	14 years, 8 months ago (Dec. 1, 2010)

Funders 0

None

BibTeX

@article{Galazka_2010, title={Czochralski growth and characterization of β‐Ga2O3 single crystals}, volume={45}, ISSN={1521-4079}, url={http://dx.doi.org/10.1002/crat.201000341}, DOI={10.1002/crat.201000341}, number={12}, journal={Crystal Research and Technology}, publisher={Wiley}, author={Galazka, Z. and Uecker, R. and Irmscher, K. and Albrecht, M. and Klimm, D. and Pietsch, M. and Brützam, M. and Bertram, R. and Ganschow, S. and Fornari, R.}, year={2010}, month=aug, pages={1229–1236} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        21
      ]
    ],
    "date-time": "2025-08-21T17:36:30Z",
    "timestamp": 1755797790755
  },
  "reference-count": 38,
  "publisher": "Wiley",
  "issue": "12",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2010,
            8,
            26
          ]
        ],
        "date-time": "2010-08-26T00:00:00Z",
        "timestamp": 1282780800000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "http://onlinelibrary.wiley.com/termsAndConditions#vor"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2010,
        12
      ]
    ]
  },
  "abstract": "<jats:title>Abstract</jats:title><jats:p>Transparent semiconducting \u03b2\u2010Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> single crystals were grown by the Czochralski method from an iridium crucible under a dynamic protective atmosphere to control partial pressures of volatile species of Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. Thermodynamic calculations on different atmospheres containing CO<jats:sub>2</jats:sub>, Ar and O<jats:sub>2</jats:sub> reveal that CO<jats:sub>2</jats:sub> growth atmosphere combined with overpressure significantly decreases evaporation of volatile Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> species without any harm to iridium crucible. It has been found that CO<jats:sub>2</jats:sub>, besides providing high oxygen concentration at high temperatures, is also acting as a minor reducing agent for Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. Different coloration of obtained crystals as well as optical and electrical properties are directly correlated with growth conditions (atmosphere, pressure and temperature gradients), but not with residual impurities. Typical electrical properties of the n\u2010type \u03b2\u2010Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> crystals at room temperature are: \u03f1 = 0.1 \u2013 0.3 \u03a9cm, \u00b5<jats:sub>n,Hall</jats:sub> = 110 \u2010 150 cm<jats:sup>2</jats:sup>V<jats:sup>\u20101</jats:sup>s<jats:sup>\u20101</jats:sup>, n<jats:sub>Hall</jats:sub> = 2 \u2010 6 \u00d7 10<jats:sup>17</jats:sup>\u00a0cm<jats:sup>\u20103</jats:sup> and E<jats:sub>Ionisation</jats:sub> = 30 \u2010 40 meV. A decrease of transmission in the IR\u2010region is directly correlated with the free carrier concentration and can be effectively modulated by the dynamic growth atmosphere. Electron paramagnetic resonance (EPR) spectra exhibit an isotropic shallow donor level and anisotropic defect level. According to differential thermal analysis (DTA) measurements, there is substantially no mass change of \u03b2\u2010Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> crystals below 1200 \u00b0C (i.e. no decomposition) under oxidizing or neutral atmosphere, while the mass gradually decreases with temperature above 1200 \u00b0C. High resolution transmission electron microscopy (HRTEM) images at atomic resolution show the presence of vacancies, which can be attributed to Ga or O sites, and interstitials, which can likely be attributed to Ga atoms. (\u00a9 2010 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</jats:p>",
  "DOI": "10.1002/crat.201000341",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2010,
        8,
        30
      ]
    ],
    "date-time": "2010-08-30T06:20:36Z",
    "timestamp": 1283149236000
  },
  "page": "1229-1236",
  "source": "Crossref",
  "is-referenced-by-count": 423,
  "title": "Czochralski growth and characterization of \u03b2\u2010Ga<sub>2</sub>O<sub>3</sub> single crystals",
  "prefix": "10.1002",
  "volume": "45",
  "author": [
    {
      "given": "Z.",
      "family": "Galazka",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "R.",
      "family": "Uecker",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "K.",
      "family": "Irmscher",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "M.",
      "family": "Albrecht",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "D.",
      "family": "Klimm",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "M.",
      "family": "Pietsch",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "M.",
      "family": "Br\u00fctzam",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "R.",
      "family": "Bertram",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "S.",
      "family": "Ganschow",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "R.",
      "family": "Fornari",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "311",
  "published-online": {
    "date-parts": [
      [
        2010,
        8,
        26
      ]
    ]
  },
  "reference": [
    {
      "key": "e_1_2_1_2_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.46.7217"
    },
    {
      "key": "e_1_2_1_3_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.tsf.2005.08.230"
    },
    {
      "key": "e_1_2_1_4_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0927-0248(00)00196-3"
    },
    {
      "key": "e_1_2_1_5_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.tsf.2005.08.187"
    },
    {
      "key": "e_1_2_1_6_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0040-6090(00)01123-8"
    },
    {
      "key": "e_1_2_1_7_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1111/j.1551-2916.2007.01842.x"
    },
    {
      "key": "e_1_2_1_8_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0169-4332(03)00122-3"
    },
    {
      "key": "e_1_2_1_9_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0925-4005(91)80148-D"
    },
    {
      "key": "e_1_2_1_10_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1107/S0108270195016404"
    },
    {
      "key": "e_1_2_1_11_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.tsf.2007.03.092"
    },
    {
      "key": "e_1_2_1_12_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1330559"
    },
    {
      "key": "e_1_2_1_13_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/pssa.200778856"
    },
    {
      "key": "e_1_2_1_14_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.359055"
    },
    {
      "key": "e_1_2_1_15_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1980535"
    },
    {
      "key": "e_1_2_1_16_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0022-0248(86)90471-9"
    },
    {
      "key": "e_1_2_1_17_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.mseb.2004.01.012"
    },
    {
      "key": "e_1_2_1_18_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0040-6090(95)08161-5"
    },
    {
      "key": "e_1_2_1_19_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.2164407"
    },
    {
      "key": "e_1_2_1_20_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.tsf.2004.03.037"
    },
    {
      "key": "e_1_2_1_21_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0022-0248(72)90523-4"
    },
    {
      "key": "e_1_2_1_22_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0022-0248(93)90278-5"
    },
    {
      "key": "e_1_2_1_23_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1111/j.1151-2916.1964.tb14442.x"
    },
    {
      "key": "e_1_2_1_24_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0022-3697(67)90305-8"
    },
    {
      "key": "e_1_2_1_25_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0022-4596(78)90066-X"
    },
    {
      "key": "e_1_2_1_26_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.119233"
    },
    {
      "key": "e_1_2_1_27_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.jcrysgro.2004.06.027"
    },
    {
      "key": "e_1_2_1_28_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.jpcs.2006.06.025"
    },
    {
      "key": "e_1_2_1_29_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.119693"
    },
    {
      "key": "e_1_2_1_30_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.tsf.2007.10.083"
    },
    {
      "key": "e_1_2_1_31_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevB.68.155207"
    },
    {
      "key": "e_1_2_1_32_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.47.8506"
    },
    {
      "key": "e_1_2_1_33_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRev.140.A316"
    },
    {
      "key": "e_1_2_1_34_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0038-1098(03)00439-3"
    },
    {
      "key": "e_1_2_1_35_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0022-0248(00)00851-4"
    },
    {
      "key": "e_1_2_1_36_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.jcrysgro.2008.09.037"
    },
    {
      "key": "e_1_2_1_37_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1111/j.1551-2916.2004.00683.x"
    },
    {
      "key": "e_1_2_1_38_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.tsf.2007.10.045"
    },
    {
      "key": "e_1_2_1_39_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0020-0891(62)90046-5"
    }
  ],
  "container-title": "Crystal Research and Technology",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fcrat.201000341",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://onlinelibrary.wiley.com/doi/pdf/10.1002/crat.201000341",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        9,
        12
      ]
    ],
    "date-time": "2023-09-12T19:36:54Z",
    "timestamp": 1694547414000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://onlinelibrary.wiley.com/doi/10.1002/crat.201000341"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2010,
        8,
        26
      ]
    ]
  },
  "references-count": 38,
  "journal-issue": {
    "issue": "12",
    "published-print": {
      "date-parts": [
        [
          2010,
          12
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1002/crat.201000341"
  ],
  "URL": "http://dx.doi.org/10.1002/crat.201000341",
  "relation": {},
  "ISSN": [
    "0232-1300",
    "1521-4079"
  ],
  "subject": [],
  "container-title-short": "Cryst. Res. Technol.",
  "published": {
    "date-parts": [
      [
        2010,
        8,
        26
      ]
    ]
  }
}