DOI: 10.1002/crat.200410532. DC conduction processes in nickel‐dimethylglyoxime films

DC conduction processes in nickel‐dimethylglyoxime films

10.1002/crat.200410532

Crossref journal-article

Wiley

Crystal Research and Technology (311)

Abstract

AbstractThin nickel‐dimethylglyoxime Ni(DMG)2 films of amorphous and crystalline structures were prepared by vacuum sublimation on glass and p‐type Si substrates. The films were characterised by X‐ray diffraction. The constructed Al/Ni(DMG)2/Si(p) MIS devices were characterised by the measurement of their capacitance as a function of gate voltage. The dc‐electrical conduction of the Ni(DMG)2 films grown on silicon substrate were studied at room temperature and in a temperature range of 293 ‐ 323 K. The dc current‐voltage data of both amorphous and crystalline insulator follow the trap‐charge‐limited space‐charge‐limited conductivity mechanism with the characteristic trap energy Et of about 0.05 eV. The total concentration and the energy distribution of the traps were determined. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Bibliography

Dakhel, A. A. (2005). DC conduction processes in nickelâdimethylglyoxime films. Crystal Research and Technology, 41(1), 68â71. Portico.

Authors 1

A. A. Dakhel (first)

References 29 Referenced 3

J. C.BailarJr. H. J.Emeleus R.Nyholm andA. F.Trotman‐Dickenson (eds.) Comprehensive Inorganic Chemistry pp. 1141–1160 Pergamon press Oxford 1975.
N. N.GreenwoodandA.Earnshaw Chemistry of the Elements pp. 52–1160 Butterworth‐Heinemann Oxford 2001.
10.1515/znb-1977-0508 / Z. Naturforsch. by Endres H. (1977)
10.1002/(SICI)1521-4095(199809)10:13<1018::AID-ADMA1018>3.0.CO;2-R
10.1016/S0379-6779(96)04515-8
10.1063/1.1731473
10.1021/ic50093a034
10.1016/0009-2614(94)00268-1
10.1016/0022-4596(77)90032-9
10.1063/1.451314
10.1246/bcsj.64.1607
M. A.LampertandP.Mark Current injection in solids Academic press NY 1970.
10.1063/1.125674
10.1016/S0022-3697(03)00062-3
10.1016/S0022-3697(03)00135-5
10.1016/0022-3697(93)90272-S
M. A.Malati Experimental Inorganic Physical Chemistry ‐ An Investigated Integrated Approach to Practical Project Work Harwood series in chemical science Harwood publishing Chichester 1999 p. 214.
10.1021/ja01512a066
10.1107/S1600536803024656
E. F.Kaelble (ed.) Handbook of X‐rays for Diffraction Emission Absorption and Microscopy McGraw‐Hill New York 1967 p. 17‐5.
10.1107/S0567740879004313
S. M.Sze Physics of Semiconductor Devices 2nd edition John Wiley & Sons Inc. 1981.
10.1016/S0040-6090(99)00344-2
10.1103/PhysRev.97.1538
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10.1016/S0040-6090(99)00550-7
10.1088/0022-3727/14/1/011
10.1134/1.1321238

Dates

Type	When
Created	19 years, 8 months ago (Dec. 16, 2005, 6:49 a.m.)
Deposited	1 year, 9 months ago (Nov. 15, 2023, 12:59 a.m.)
Indexed	1 year, 9 months ago (Nov. 15, 2023, 8:22 a.m.)
Issued	19 years, 8 months ago (Dec. 16, 2005)
Published	19 years, 8 months ago (Dec. 16, 2005)
Published Online	19 years, 8 months ago (Dec. 16, 2005)
Published Print	19 years, 8 months ago (Jan. 1, 2006)

Funders 0

None

BibTeX

@article{Dakhel_2005, title={DC conduction processes in nickel‐dimethylglyoxime films}, volume={41}, ISSN={1521-4079}, url={http://dx.doi.org/10.1002/crat.200410532}, DOI={10.1002/crat.200410532}, number={1}, journal={Crystal Research and Technology}, publisher={Wiley}, author={Dakhel, A. A.}, year={2005}, month=dec, pages={68–71} }

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