DOI: 10.1002/crat.200310033. Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing

Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing

10.1002/crat.200310033

Crossref journal-article

Wiley

Crystal Research and Technology (311)

Abstract

AbstractThermodynamic conditions for post‐growth annealing to prepare near stoichiometric semi‐insulating CdTe are studied for undoped, and Sn and Ge‐doped single crystals. The main aim of the annealing procedure was to obtain high resistive material with the minimal concentration of native and foreign defects. The high temperature (200 – 1000 °C) in‐situ conductivity σ and Hall effect measurements were used to control the native defect density and to determine the Cd pressure pCd at which shallow defects are compensated. It is shown that contrary to the undoped samples in which the change of the type of conductivity by variations of pCd is easy, the Sn‐ and Ge‐doped samples exhibit a much more stable behavior due to the Sn (Ge) selfcompensation. It was found that: the temperatures near 500 °C is optimum for the real‐time annealing of bulk samples, the chemical diffusion is sufficiently fast at these temperatures while the uncontrolled change of defect density distribution during the subsequent cooling process is minimized. The time‐dependent charge measurement technique was used to characterize the room‐temperature specific resistivity distribution in the as‐grown crystals, which indirectly controls the dynamic of solidification process. This allows us to consider the specific resistivity distribution along the growth direction of each crystal in terms of superposition of segregation and self‐compensation phenomena.

Bibliography

Turkevych, I., Grill, R., Franc, J., HÃ¶schl, P., Belas, E., Moravec, P., Fiederle, M., & Benz, K. W. (2003). Preparation of semiâinsulating CdTe doped with group IV elements by post growth annealing. Crystal Research and Technology, 38(3â5), 288â296. Portico.

Authors 8

I. Turkevych (first)
R. Grill (additional)
J. Franc (additional)
P. Höschl (additional)
E. Belas (additional)
P. Moravec (additional)
M. Fiederle (additional)
K. W. Benz (additional)

References 28 Referenced 15

10.1117/12.180024
10.1016/0168-9002(96)00227-6
R. B.James T. E.Schlesinger J.Lund M.Schieber. Semiconductor and Semimetals 43 Academic Press New York 1997 p. 335.
10.1103/PhysRevB.45.6247
10.1063/1.368874
10.1103/PhysRevB.47.15578
10.1016/0022-3697(95)00250-2
10.1007/BF02665840
10.1016/S0022-0248(98)00798-2
10.1002/pssa.2210660108
10.1016/S0022-0248(97)00772-0 / J. Cryst. Growth by Höschl P. (1998)
M. G.Astles EMIS Datareviews Series 10 Ed. INSPEC London 1994 p. 494‐500.
10.1088/0268-1242/17/10/305
10.1002/1521-3951(200201)229:1<161::AID-PSSB161>3.0.CO;2-3
10.1088/0268-1242/6/10/008
F. A.Kroger in: The Chemistry of Imperfect Solids North‐Holland Amsterdam 1973 p. 672.
10.1016/0921-5107(93)90048-R
10.1103/PhysRevB.60.8943
10.1007/BF02811585
{'key': 'e_1_2_1_20_2', 'first-page': '1276', 'volume': '31', 'author': 'Fochuk P. M.', 'year': '1995', 'journal-title': 'Inorg. Mater.'} / Inorg. Mater. by Fochuk P. M. (1995)
{'key': 'e_1_2_1_21_2', 'first-page': '361', 'volume': '14', 'author': 'Nobel D.', 'year': '1959', 'journal-title': 'Philips Res. Rep.'} / Philips Res. Rep. by Nobel D. (1959)
10.1063/1.1321774
10.1103/PhysRevB.2.4036
J. L.Pautrat N.Magnea EMIS Datareviews Series 10 Ed. INSPEC London 1994 p. 546‐554.
10.1063/1.345497
R.Grill J.Franc P.Höschl I.Turkevych E.Belas P.Moravec M.Fiederle K. W.Benz IEEE Trans. Nucl. Sci. in press.
10.1016/0022-0248(90)91004-A
10.1016/S0040-6090(00)01717-X / Thin Solid Films by Marfaing Y. (2001)

Dates

Type	When
Created	22 years, 4 months ago (April 10, 2003, 1:01 p.m.)
Deposited	2 years ago (Aug. 30, 2023, 2:10 a.m.)
Indexed	1 year, 10 months ago (Oct. 18, 2023, 3:04 a.m.)
Issued	22 years, 4 months ago (April 1, 2003)
Published	22 years, 4 months ago (April 1, 2003)
Published Online	22 years, 4 months ago (April 10, 2003)
Published Print	22 years, 4 months ago (April 1, 2003)

Funders 0

None

BibTeX

@article{Turkevych_2003, title={Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing}, volume={38}, ISSN={1521-4079}, url={http://dx.doi.org/10.1002/crat.200310033}, DOI={10.1002/crat.200310033}, number={3–5}, journal={Crystal Research and Technology}, publisher={Wiley}, author={Turkevych, I. and Grill, R. and Franc, J. and Höschl, P. and Belas, E. and Moravec, P. and Fiederle, M. and Benz, K. W.}, year={2003}, month=apr, pages={288–296} }

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