DOI: 10.1002/bbpc.19961000513. Transport of Photogenerated Charge Carriers Through Crystalline GaP Networks Investigated by Intensity Modulated Photocurrent Spectroscopy

Transport of Photogenerated Charge Carriers Through Crystalline GaP Networks Investigated by Intensity Modulated Photocurrent Spectroscopy

10.1002/bbpc.19961000513

Crossref journal-article

Wiley

Berichte der Bunsengesellschaft für physikalische Chemie (311)

Abstract

AbstractThe transport of photogenerated electrons through porous n‐GaP electrodes has been investigated with Intensity Modulated Photocurrent Spectroscopy. Porous layers with a thickness of between 1 and 200 μm were formed on GaP substrates by anodic etching of crystalline n‐GaP electrodes. They consist of a network of crystalline GaP interpenetrated with the electrolyte. It is shown that the transit time of photogenerated electrons through the depleted porous network is larger than the RC response time. Hence, IMPS performed in the frequency window below (RC)−1 directly probes the transient photocurrent flow in the depleted porous network. The relatively long transit times observed with IMPS are attributed to strongly meandering paths of the photogenerated electrons through the crystalline network, probably determined by the potential distribution in the depleted network.

Bibliography

Vanmaekelbergh, D., Iranzo MarÃn, F., & van De Lagemaat, J. (1996). Transport of Photogenerated Charge Carriers Through Crystalline GaP Networks Investigated by Intensity Modulated Photocurrent Spectroscopy. Berichte Der Bunsengesellschaft FÃ¼r Physikalische Chemie, 100(5), 616â626. Portico.

Authors 3

D. Vanmaekelbergh (first)
F. Iranzo Marín (additional)
J. van De Lagemaat (additional)

References 24 Referenced 36

10.1038/353737a0
10.1021/j100193a062
10.1149/1.2069045
10.1149/1.2069468
10.1021/j100038a048
10.1021/j100031a027
{'key': 'e_1_2_1_8_2', 'first-page': '98', 'volume-title': 'Proceedings “Nanostructured Materials in Electrochemistry', 'author': 'Oskam G.', 'year': '1995'} / Proceedings “Nanostructured Materials in Electrochemistry by Oskam G. (1995)
{'key': 'e_1_2_1_9_2', 'first-page': '180', 'volume-title': 'Proceedings “Nanostructured Materials in Electrochemistry', 'author': 'Cao F.', 'year': '1995'} / Proceedings “Nanostructured Materials in Electrochemistry by Cao F. (1995)
10.1021/j100072a023
10.1002/adma.19950070813
10.1149/1.1836428
10.1016/0022-0728(85)85050-6
10.1016/0022-0728(95)04115-5
10.1016/0013-4686(93)80153-Q
10.1063/1.353776
D.Vanmaekelbergh J.van de Lagemaat andR. E. I.Schropp Solar Energy Materials (in press).
10.1002/bbpc.198800317
10.1002/bbpc.19840880412
10.1016/0022-0728(87)80094-3
10.1088/0022-3727/19/4/017
10.1149/1.2115568
10.1063/1.350839
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{'key': 'e_1_2_1_25_2', 'volume-title': 'Semiconductor devices. Physics and technology,', 'author': 'Sze S. M.', 'year': '1985'} / Semiconductor devices. Physics and technology, by Sze S. M. (1985)

Dates

Type	When
Created	13 years, 1 month ago (July 26, 2012, 4:19 a.m.)
Deposited	1 year, 10 months ago (Oct. 26, 2023, 10:57 a.m.)
Indexed	1 month, 2 weeks ago (July 12, 2025, 6:44 p.m.)
Issued	29 years, 3 months ago (May 1, 1996)
Published	29 years, 3 months ago (May 1, 1996)
Published Online	15 years, 3 months ago (May 8, 2010)
Published Print	29 years, 3 months ago (May 1, 1996)

Funders 0

None

BibTeX

@article{Vanmaekelbergh_1996, title={Transport of Photogenerated Charge Carriers Through Crystalline GaP Networks Investigated by Intensity Modulated Photocurrent Spectroscopy}, volume={100}, ISSN={0005-9021}, url={http://dx.doi.org/10.1002/bbpc.19961000513}, DOI={10.1002/bbpc.19961000513}, number={5}, journal={Berichte der Bunsengesellschaft für physikalische Chemie}, publisher={Wiley}, author={Vanmaekelbergh, D. and Iranzo Marín, F. and van De Lagemaat, J.}, year={1996}, month=may, pages={616–626} }

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