Abstract
AbstractStabilities, geometries and electronic structures of Aln (n = 3–5) and Gem (m = 3–6) clusters have been determined by means of pseudopotential MRD CI calculations. Most stable Al clusters are characterized by high spin multiplicities and can be considered as deformed sections of the Al fcc crystal lattice. On the contrary, most favoured Ge clusters have singlet ground states and geometrical structures which cannot be identified as parts of the diamond‐like Ge crystal lattice. – The differences in the properties of Al and Ge clusters can be rationalized on the basis of their respective electronic structures.
References
17
Referenced
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- The theoreticalEb/nrefer to the full CI energy of the system and have been computed asEfullCI(Gen) –nEfullCI(Ge).
10.1103/PhysRevB.27.6553
Dates
Type | When |
---|---|
Created | 13 years, 1 month ago (July 30, 2012, 6:42 a.m.) |
Deposited | 1 year, 10 months ago (Oct. 19, 2023, 6:44 p.m.) |
Indexed | 2 months, 2 weeks ago (June 20, 2025, 4:08 a.m.) |
Issued | 41 years, 6 months ago (March 1, 1984) |
Published | 41 years, 6 months ago (March 1, 1984) |
Published Online | 15 years, 3 months ago (May 7, 2010) |
Published Print | 41 years, 6 months ago (March 1, 1984) |
@article{Pacchioni_1984, title={Electronic Structure and Properties of Small Al and Ge Clusters}, volume={88}, ISSN={0005-9021}, url={http://dx.doi.org/10.1002/bbpc.19840880314}, DOI={10.1002/bbpc.19840880314}, number={3}, journal={Berichte der Bunsengesellschaft für physikalische Chemie}, publisher={Wiley}, author={Pacchioni, Gianfranco and Koutecký, Jaroslav}, year={1984}, month=mar, pages={242–245} }