DOI: 10.1002/ange.201507568. Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

10.1002/ange.201507568

Crossref journal-article

Wiley

Angewandte Chemie (311)

Abstract

AbstractOptoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two‐dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm2 V−1 s−1. Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics.

Authors 9

Shengli Zhang (first)
Meiqiu Xie (additional)
Fengyu Li (additional)
Zhong Yan (additional)
Yafei Li (additional)
Erjun Kan (additional)
Wei Liu (additional)
Zhongfang Chen (additional)
Haibo Zeng (additional)

References 53 Referenced 357

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{'volume-title': 'Chemistry of Arsenic, Antimony and Bismuth', 'year': '1998', 'author': 'Norman N. C.', 'key': 'e_1_2_2_34_2'} / Chemistry of Arsenic, Antimony and Bismuth by Norman N. C. (1998)
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Dates

Type	When
Created	9 years, 8 months ago (Dec. 16, 2015, 7:14 a.m.)
Deposited	1 year, 11 months ago (Sept. 9, 2023, 10:22 p.m.)
Indexed	3 days ago (Aug. 23, 2025, 9:44 p.m.)
Issued	9 years, 8 months ago (Dec. 16, 2015)
Published	9 years, 8 months ago (Dec. 16, 2015)
Published Online	9 years, 8 months ago (Dec. 16, 2015)
Published Print	9 years, 7 months ago (Jan. 26, 2016)

Funders 1

National Science Foundation 10.13039/100000001
Region: Americas
gov (National government)
Labels4
1. U.S. National Science Foundation
2. NSF
3. US NSF
4. USA NSF
Awards1
1. Grant EPS-10024109

BibTeX

@article{Zhang_2015, title={Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities}, volume={128}, ISSN={1521-3757}, url={http://dx.doi.org/10.1002/ange.201507568}, DOI={10.1002/ange.201507568}, number={5}, journal={Angewandte Chemie}, publisher={Wiley}, author={Zhang, Shengli and Xie, Meiqiu and Li, Fengyu and Yan, Zhong and Li, Yafei and Kan, Erjun and Liu, Wei and Chen, Zhongfang and Zeng, Haibo}, year={2015}, month=dec, pages={1698–1701} }

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