DOI: 10.1002/aenm.201100775. Tellurium‐Free Thermoelectric: The Anisotropic n‐Type Semiconductor Bi2S3

Tellurium‐Free Thermoelectric: The Anisotropic n‐Type Semiconductor Bi2S3

10.1002/aenm.201100775

Crossref journal-article

Wiley

Advanced Energy Materials (311)

Bibliography

Biswas, K., Zhao, L., & Kanatzidis, M. G. (2012). TelluriumâFree Thermoelectric: The Anisotropic nâType Semiconductor Bi2S3. Advanced Energy Materials, 2(6), 634â638. Portico.

Authors 3

Kanishka Biswas (first)
Li‐Dong Zhao (additional)
Mercouri G. Kanatzidis (additional)

References 50 Referenced 227

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Dates

Type	When
Created	13 years, 5 months ago (March 19, 2012, 8:40 a.m.)
Deposited	1 year, 10 months ago (Oct. 11, 2023, 2:43 p.m.)
Indexed	3 weeks ago (Aug. 2, 2025, 12:07 a.m.)
Issued	13 years, 5 months ago (March 19, 2012)
Published	13 years, 5 months ago (March 19, 2012)
Published Online	13 years, 5 months ago (March 19, 2012)
Published Print	13 years, 2 months ago (June 1, 2012)

Funders 0

None

BibTeX

@article{Biswas_2012, title={Tellurium‐Free Thermoelectric: The Anisotropic n‐Type Semiconductor Bi2S3}, volume={2}, ISSN={1614-6840}, url={http://dx.doi.org/10.1002/aenm.201100775}, DOI={10.1002/aenm.201100775}, number={6}, journal={Advanced Energy Materials}, publisher={Wiley}, author={Biswas, Kanishka and Zhao, Li‐Dong and Kanatzidis, Mercouri G.}, year={2012}, month=mar, pages={634–638} }

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