DOI: 10.1002/advs.201700231. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides
10.1002/advs.201700231
Crossref journal-article
Wiley
Advanced Science (311)
Abstract
AbstractWith the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.
Bibliography
Gong, C., Zhang, Y., Chen, W., Chu, J., Lei, T., Pu, J., Dai, L., Wu, C., Cheng, Y., Zhai, T., Li, L., & Xiong, J. (2017). Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides. Advanced Science, 4(12). Portico.
Authors 12
Chuanhui Gong (first)
Yuxi Zhang (additional)
Wei Chen (additional)
Junwei Chu (additional)
Tianyu Lei (additional)
Junru Pu (additional)
Liping Dai (additional)
Chunyang Wu (additional)
Yuhua Cheng (additional)
Tianyou Zhai (additional)
Liang Li (additional)
Jie Xiong (additional)
References 202 Referenced 290
Dates
Type	When
Created	7 years, 10 months ago (Oct. 6, 2017, 9:48 a.m.)
Deposited	1 year, 11 months ago (Sept. 17, 2023, 1:17 a.m.)
Indexed	2 weeks, 1 day ago (Aug. 7, 2025, 5:05 a.m.)
Issued	7 years, 10 months ago (Oct. 6, 2017)
Published	7 years, 10 months ago (Oct. 6, 2017)
Published Online	7 years, 10 months ago (Oct. 6, 2017)
Published Print	7 years, 8 months ago (Dec. 1, 2017)
Funders 1
National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
Labels11
1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards1
1. 91421110
BibTeX
@article{Gong_2017, title={Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides}, volume={4}, ISSN={2198-3844}, url={http://dx.doi.org/10.1002/advs.201700231}, DOI={10.1002/advs.201700231}, number={12}, journal={Advanced Science}, publisher={Wiley}, author={Gong, Chuanhui and Zhang, Yuxi and Chen, Wei and Chu, Junwei and Lei, Tianyu and Pu, Junru and Dai, Liping and Wu, Chunyang and Cheng, Yuhua and Zhai, Tianyou and Li, Liang and Xiong, Jie}, year={2017}, month=oct }
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  "abstract": "<jats:title>Abstract</jats:title><jats:p>With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high\u2010performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe<jats:sub>2</jats:sub> and ReX<jats:sub>2</jats:sub> (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low\u2010symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field\u2010effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high\u2010performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.</jats:p>",
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  },
  "alternative-id": [
    "10.1002/advs.201700231"
  ],
  "URL": "http://dx.doi.org/10.1002/advs.201700231",
  "relation": {},
  "ISSN": [
    "2198-3844",
    "2198-3844"
  ],
  "subject": [],
  "container-title-short": "Advanced Science",
  "published": {
    "date-parts": [
      [
        2017,
        10,
        6
      ]
    ]
  },
  "article-number": "1700231"
}