DOI: 10.1002/adma.202207143. Atomic Layer Deposition of Sb<sub>2</sub>Te<sub>3</sub>/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory

Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory

10.1002/adma.202207143

Crossref journal-article

Wiley

Advanced Materials (311)

Abstract

AbstractAtomic layer deposition (ALD) of Sb2Te3/GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb2Te3 enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge2Sb2Te5 alloy. The reset switching is induced by the transition from the SL to the (111)‐oriented face‐centered‐cubic (FCC) Ge2Sb2Te5 alloy and subsequent melt‐quenching‐free amorphization. The in‐plane compressive stress, induced by the SL‐to‐FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)‐oriented FCC structure.

Bibliography

Yoo, C., Jeon, J. W., Yoon, S., Cheng, Y., Han, G., Choi, W., Park, B., Jeon, G., Jeon, S., Kim, W., Zheng, Y., Lee, J., Ahn, J., Cho, S., Clendenning, S. B., Karpov, I. V., Lee, Y. K., Choi, J., & Hwang, C. S. (2022). Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its MeltâQuenchingâFree PhaseâTransition Mechanism for PhaseâChange Memory. Advanced Materials, 34(50). Portico.

Authors 19

Chanyoung Yoo (first)
Jeong Woo Jeon (additional)
Seungjae Yoon (additional)
Yan Cheng (additional)
Gyuseung Han (additional)
Wonho Choi (additional)
Byongwoo Park (additional)
Gwangsik Jeon (additional)
Sangmin Jeon (additional)
Woohyun Kim (additional)
Yonghui Zheng (additional)
Jongho Lee (additional)
Junku Ahn (additional)
Sunglae Cho (additional)
Scott B. Clendenning (additional)
Ilya V. Karpov (additional)
Yoon Kyung Lee (additional)
Jung‐Hae Choi (additional)
Cheol Seong Hwang (additional)

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Dates

Type	When
Created	2 years, 9 months ago (Oct. 22, 2022, 3:49 a.m.)
Deposited	2 years ago (Aug. 19, 2023, 3:45 p.m.)
Indexed	1 week, 1 day ago (Aug. 12, 2025, 5:57 p.m.)
Issued	2 years, 9 months ago (Nov. 3, 2022)
Published	2 years, 9 months ago (Nov. 3, 2022)
Published Online	2 years, 9 months ago (Nov. 3, 2022)
Published Print	2 years, 8 months ago (Dec. 1, 2022)

Funders 1

National Research Foundation of Korea 10.13039/501100003725
Region: Asia
pri (Trusts, charities, foundations (both public and private))
Labels3
1. 한국연구재단이 창의적 연구와
2. National Research Foundation (South Korea)
3. NRF
Awards1
1. 2020R1A3B2079882

BibTeX

@article{Yoo_2022, title={Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory}, volume={34}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.202207143}, DOI={10.1002/adma.202207143}, number={50}, journal={Advanced Materials}, publisher={Wiley}, author={Yoo, Chanyoung and Jeon, Jeong Woo and Yoon, Seungjae and Cheng, Yan and Han, Gyuseung and Choi, Wonho and Park, Byongwoo and Jeon, Gwangsik and Jeon, Sangmin and Kim, Woohyun and Zheng, Yonghui and Lee, Jongho and Ahn, Junku and Cho, Sunglae and Clendenning, Scott B. and Karpov, Ilya V. and Lee, Yoon Kyung and Choi, Jung‐Hae and Hwang, Cheol Seong}, year={2022}, month=nov }

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