Abstract
AbstractHeterostructures formed from interfaces between materials with complementary properties often display unconventional physics. Of especial interest are heterostructures formed with ferroelectric materials. These are mostly formed by combining thin layers in vertical stacks. Here the first in situ molecular beam epitaxial growth and scanning tunneling microscopy characterization of atomically sharp lateral heterostructures between a ferroelectric SnTe monolayer and a paraelectric PbTe monolayer are reported. The bias voltage dependence of the apparent heights of SnTe and PbTe monolayers, which are closely related to the type‐II band alignment of the heterostructure, is investigated. Remarkably, it is discovered that the ferroelectric domains in the SnTe surrounding a PbTe core form either clockwise or counterclockwise vortex‐oriented quadrant configurations. In addition, when there is a finite angle between the polarization and the interface, the perpendicular component of the polarization always points from SnTe to PbTe. Supported by first‐principles calculation, the mechanism of vortex formation and preferred polarization direction is identified in the interaction between the polarization, the space charge, and the strain effect at the horizontal heterointerface. The studies bring the application of 2D group‐IV monochalcogenides on in‐plane ferroelectric heterostructures a step closer.
Authors
8
- Kai Chang (first)
- John W. D. Villanova (additional)
- Jing‐Rong Ji (additional)
- Souvik Das (additional)
- Felix Küster (additional)
- Salvador Barraza‐Lopez (additional)
- Paolo Sessi (additional)
- Stuart S. P. Parkin (additional)
References
70
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Dates
Type | When |
---|---|
Created | 4 years, 1 month ago (July 3, 2021, 10:44 a.m.) |
Deposited | 1 year, 11 months ago (Aug. 29, 2023, 9:55 a.m.) |
Indexed | 3 weeks, 2 days ago (July 30, 2025, 3:38 a.m.) |
Issued | 4 years, 1 month ago (July 3, 2021) |
Published | 4 years, 1 month ago (July 3, 2021) |
Published Online | 4 years, 1 month ago (July 3, 2021) |
Published Print | 4 years ago (Aug. 1, 2021) |
Funders
5
National Natural Science Foundation of China
10.13039/501100001809
Region: Asia
gov (National government)
Labels
11
- Chinese National Science Foundation
- Natural Science Foundation of China
- National Science Foundation of China
- NNSF of China
- NSF of China
- 国家自然科学基金委员会
- National Nature Science Foundation of China
- Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
- NSFC
- NNSF
- NNSFC
Awards
1
- 314790414
Deutsche Forschungsgemeinschaft
10.13039/501100001659
Region: Europe
gov (National government)
Labels
3
- German Research Association
- German Research Foundation
- DFG
Awards
1
- 12074038
U.S. Department of Energy
10.13039/100000015
Region: Americas
gov (National government)
Labels
8
- Energy Department
- Department of Energy
- United States Department of Energy
- ENERGY.GOV
- US Department of Energy
- USDOE
- DOE
- USADOE
Awards
1
- DE‐SC0016139
National Science Foundation
10.13039/100000001
Region: Americas
gov (National government)
Labels
4
- U.S. National Science Foundation
- NSF
- US NSF
- USA NSF
Arkansas Economic Development Commission
10.13039/100016869
Region: Americas
gov (Local government)
Labels
1
- AEDC
@article{Chang_2021, title={Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures}, volume={33}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.202102267}, DOI={10.1002/adma.202102267}, number={32}, journal={Advanced Materials}, publisher={Wiley}, author={Chang, Kai and Villanova, John W. D. and Ji, Jing‐Rong and Das, Souvik and Küster, Felix and Barraza‐Lopez, Salvador and Sessi, Paolo and Parkin, Stuart S. P.}, year={2021}, month=jul }