DOI: 10.1002/adma.201803665. Edge‐Epitaxial Growth of 2D NbS<sub>2</sub>‐WS<sub>2</sub> Lateral Metal‐Semiconductor Heterostructures

Edge‐Epitaxial Growth of 2D NbS2‐WS2 Lateral Metal‐Semiconductor Heterostructures

10.1002/adma.201803665

Crossref journal-article

Wiley

Advanced Materials (311)

Abstract

Abstract2D metal‐semiconductor heterostructures based on transition metal dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such as contact engineering and high‐frequency devices. Although, a series of p–n junctions utilizing semiconducting TMDs have been constructed hitherto, the realization of such a scheme using 2D metallic analogs has not been reported. Here, the synthesis of uniform monolayer metallic NbS2 on sapphire substrate with domain size reaching to a millimeter scale via a facile chemical vapor deposition (CVD) route is demonstrated. More importantly, the epitaxial growth of NbS2‐WS2 lateral metal‐semiconductor heterostructures via a “two‐step” CVD method is realized. Both the lateral and vertical NbS2‐WS2 heterostructures are achieved here. Transmission electron microscopy studies reveal a clear chemical modulation with distinct interfaces. Raman and photoluminescence maps confirm the precisely controlled spatial modulation of the as‐grown NbS2‐WS2 heterostructures. The existence of the NbS2‐WS2 heterostructures is further manifested by electrical transport measurements. This work broadens the horizon of the in situ synthesis of TMD‐based heterostructures and enlightens the possibility of applications based on 2D metal‐semiconductor heterostructures.

Bibliography

Zhang, Y., Yin, L., Chu, J., Shifa, T. A., Xia, J., Wang, F., Wen, Y., Zhan, X., Wang, Z., & He, J. (2018). EdgeâEpitaxial Growth of 2D NbS2âWS2 Lateral MetalâSemiconductor Heterostructures. Advanced Materials, 30(40). Portico.

Authors 10

Yu Zhang (first)
Lei Yin (additional)
Junwei Chu (additional)
Tofik Ahmed Shifa (additional)
Jing Xia (additional)
Feng Wang (additional)
Yao Wen (additional)
Xueying Zhan (additional)
Zhenxing Wang (additional)
Jun He (additional)

References 52 Referenced 127

Dates

Type	When
Created	7 years ago (Aug. 22, 2018, 2:54 p.m.)
Deposited	1 year, 4 months ago (March 29, 2024, 12:13 a.m.)
Indexed	2 weeks, 4 days ago (Aug. 6, 2025, 8:11 a.m.)
Issued	7 years ago (Aug. 22, 2018)
Published	7 years ago (Aug. 22, 2018)
Published Online	7 years ago (Aug. 22, 2018)
Published Print	6 years, 10 months ago (Oct. 1, 2018)

Funders 5

Ministry of Science and Technology of the People's Republic of China 10.13039/501100002855
Region: Asia
gov (National government)
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2. Ministry of Science & Technology, People Republic of China
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4. Ministry of Science and Technology (China)
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6. MOST
Awards1
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National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
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1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
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3. Youth Innovation Promotion Association CAS
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6. Youth Innovation Promotion Association, CAS
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BibTeX

@article{Zhang_2018, title={Edge‐Epitaxial Growth of 2D NbS2‐WS2 Lateral Metal‐Semiconductor Heterostructures}, volume={30}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.201803665}, DOI={10.1002/adma.201803665}, number={40}, journal={Advanced Materials}, publisher={Wiley}, author={Zhang, Yu and Yin, Lei and Chu, Junwei and Shifa, Tofik Ahmed and Xia, Jing and Wang, Feng and Wen, Yao and Zhan, Xueying and Wang, Zhenxing and He, Jun}, year={2018}, month=aug }

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  "alternative-id": [
    "10.1002/adma.201803665"
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  "URL": "http://dx.doi.org/10.1002/adma.201803665",
  "relation": {},
  "ISSN": [
    "0935-9648",
    "1521-4095"
  ],
  "subject": [],
  "container-title-short": "Advanced Materials",
  "published": {
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        8,
        22
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  "assertion": [
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