DOI: 10.1002/adma.201800195. Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

10.1002/adma.201800195

Crossref journal-article

Wiley

Advanced Materials (311)

Abstract

AbstractNeuromorphic computing represents an innovative technology that can perform intelligent and energy‐efficient computation, whereas construction of neuromorphic systems requires biorealistic synaptic elements with rich dynamics that can be tuned based on a robust mechanism. Here, an ionic‐gating‐modulated synaptic transistor based on layered crystals of transitional metal dichalcogenides and phosphorus trichalcogenides is demonstrated, which produce a diversity of short‐term and long‐term plasticity including excitatory postsynaptic current, paired pulse facilitation, spiking‐rate‐dependent plasticity, dynamic filtering, etc., with remarkable linearity and ultralow energy consumption of ≈30 fJ per spike. Detailed transmission electron microscopy characterization and ab initio calculation reveal two‐stage ionic gating effects, namely, surface adsorption and internal intercalation in the channel medium, causing different poststimulation diffusive dynamics and thus accounting for the observed short‐term and long‐term plasticity, respectively. The synaptic activity can therefore be effectively manipulated by tailoring the ionic gating and consequent diffusion dynamics with varied thickness and structure of the van der Waals material as well as the number, duration, rate, and polarity of gate stimulations, making the present synaptic transistors intriguing candidates for low‐power neuromorphic systems.

Bibliography

Zhu, J., Yang, Y., Jia, R., Liang, Z., Zhu, W., Rehman, Z. U., Bao, L., Zhang, X., Cai, Y., Song, L., & Huang, R. (2018). Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics. Advanced Materials, 30(21). Portico.

Authors 11

Jiadi Zhu (first)
Yuchao Yang (additional)
Rundong Jia (additional)
Zhongxin Liang (additional)
Wen Zhu (additional)
Zia Ur Rehman (additional)
Lin Bao (additional)
Xiaoxian Zhang (additional)
Yimao Cai (additional)
Li Song (additional)
Ru Huang (additional)

References 50 Referenced 436

10.1109/5.58356
10.1109/JPROC.2015.2444094
10.1088/0957-4484/24/38/382001
10.1126/science.1254642
10.1021/nl201040y
10.1038/nnano.2016.70
{'key': 'e_1_2_5_7_1', 'first-page': '697', 'author': 'Burr G. W.', 'year': '2014', 'journal-title': 'IEEE Int. Electron Devices Meet.'} / IEEE Int. Electron Devices Meet. by Burr G. W. (2014)
10.1038/nature23011
10.1038/nmat3510
10.1063/1.4991917
10.1038/nmat3054
10.1038/nature14441
10.1038/nmat4756
10.1038/ncomms1737
10.1038/ncomms5232
10.1002/adma.200900375
10.1038/ncomms15173
10.1038/nnano.2015.221
10.1038/nmat3307
10.1038/nnano.2017.83
10.1038/ncomms15199
10.1038/s41928-017-0002-z
{'volume-title': 'Principles of Neural Science', 'year': '2000', 'author': 'Kandel E. R.', 'key': 'e_1_2_5_23_1'} / Principles of Neural Science by Kandel E. R. (2000)
10.1146/annurev.physiol.64.092501.114547
10.1021/acs.nanolett.5b00697
10.1002/adma.201503202
10.1038/ncomms4158
10.1038/nmat4856
10.1038/nnano.2015.56
10.1002/adma.201604310
10.1126/sciadv.1501326
10.1002/adfm.201100180
10.1063/1.1655829
10.1038/nnano.2012.193
10.1038/nnano.2014.323
10.1016/0378-7753(94)02177-5
10.1016/0167-2738(83)90054-1
10.1016/j.cell.2007.11.028
10.1038/nrn2093
10.1016/j.conb.2010.06.010
10.1113/jphysiol.1973.sp010348
10.1146/annurev.ms.16.080186.001033 / Annu. Rev. Mater. Sci. by Rouxel J. (1986)
10.1021/acs.nanolett.6b02136
10.1063/1.4961712
10.1038/nature03010
10.1109/TED.2015.2439635
{'key': 'e_1_2_5_47_1', 'first-page': '625', 'author': 'Park S.', 'year': '2013', 'journal-title': 'IEEE Int. Electron Devices Meet.'} / IEEE Int. Electron Devices Meet. by Park S. (2013)
10.1103/PhysRevX.4.031005
10.1063/1.1989431
10.1002/adma.200901710

Dates

Type	When
Created	7 years, 4 months ago (April 17, 2018, 1:30 p.m.)
Deposited	1 year, 11 months ago (Sept. 15, 2023, 9:48 p.m.)
Indexed	1 hour, 13 minutes ago (Aug. 21, 2025, 8:38 a.m.)
Issued	7 years, 4 months ago (April 17, 2018)
Published	7 years, 4 months ago (April 17, 2018)
Published Online	7 years, 4 months ago (April 17, 2018)
Published Print	7 years, 3 months ago (May 1, 2018)

Funders 2

Beijing Municipal Science and Technology Commission 10.13039/501100009592 Beijing Municipal Science and Technology Commission, Adminitrative Commission of Zhongguancun Science Park
Region: Asia
gov (Local government)
Labels6
1. Science and Technology Commission of Beijing Municipality
2. Beijing Municipal Science & Technology Commission, Adminitrative Commission of Zhongguancun Science Park
3. Beijing Municipal Science and Technology Commission
4. Beijing Municipal Science & Technology Commission
5. 北京市科学技术委员会
6. 北京市科学技术委员会, 中关村科技园区管委会
Awards1
1. Z161100000216148
National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
Labels11
1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards3
1. 61674006
2. 11604064
3. 61421005

BibTeX

@article{Zhu_2018, title={Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics}, volume={30}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.201800195}, DOI={10.1002/adma.201800195}, number={21}, journal={Advanced Materials}, publisher={Wiley}, author={Zhu, Jiadi and Yang, Yuchao and Jia, Rundong and Liang, Zhongxin and Zhu, Wen and Rehman, Zia Ur and Bao, Lin and Zhang, Xiaoxian and Cai, Yimao and Song, Li and Huang, Ru}, year={2018}, month=apr }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        21
      ]
    ],
    "date-time": "2025-08-21T12:38:23Z",
    "timestamp": 1755779903462,
    "version": "3.41.2"
  },
  "reference-count": 50,
  "publisher": "Wiley",
  "issue": "21",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2018,
            4,
            17
          ]
        ],
        "date-time": "2018-04-17T00:00:00Z",
        "timestamp": 1523923200000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "http://onlinelibrary.wiley.com/termsAndConditions#vor"
    }
  ],
  "funder": [
    {
      "DOI": "10.13039/501100009592",
      "name": "Beijing Municipal Science and Technology Commission",
      "doi-asserted-by": "publisher",
      "award": [
        "Z161100000216148"
      ],
      "id": [
        {
          "id": "10.13039/501100009592",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    },
    {
      "DOI": "10.13039/501100001809",
      "name": "National Natural Science Foundation of China",
      "doi-asserted-by": "publisher",
      "award": [
        "61674006",
        "61421005",
        "11604064"
      ],
      "id": [
        {
          "id": "10.13039/501100001809",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    }
  ],
  "content-domain": {
    "domain": [
      "onlinelibrary.wiley.com"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2018,
        5
      ]
    ]
  },
  "abstract": "<jats:title>Abstract</jats:title><jats:p>Neuromorphic computing represents an innovative technology that can perform intelligent and energy\u2010efficient computation, whereas construction of neuromorphic systems requires biorealistic synaptic elements with rich dynamics that can be tuned based on a robust mechanism. Here, an ionic\u2010gating\u2010modulated synaptic transistor based on layered crystals of transitional metal dichalcogenides and phosphorus trichalcogenides is demonstrated, which produce a diversity of short\u2010term and long\u2010term plasticity including excitatory postsynaptic current, paired pulse facilitation, spiking\u2010rate\u2010dependent plasticity, dynamic filtering, etc., with remarkable linearity and ultralow energy consumption of \u224830 fJ per spike. Detailed transmission electron microscopy characterization and ab initio calculation reveal two\u2010stage ionic gating effects, namely, surface adsorption and internal intercalation in the channel medium, causing different poststimulation diffusive dynamics and thus accounting for the observed short\u2010term and long\u2010term plasticity, respectively. The synaptic activity can therefore be effectively manipulated by tailoring the ionic gating and consequent diffusion dynamics with varied thickness and structure of the van der Waals material as well as the number, duration, rate, and polarity of gate stimulations, making the present synaptic transistors intriguing candidates for low\u2010power neuromorphic systems.</jats:p>",
  "DOI": "10.1002/adma.201800195",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2018,
        4,
        17
      ]
    ],
    "date-time": "2018-04-17T17:30:50Z",
    "timestamp": 1523986250000
  },
  "update-policy": "https://doi.org/10.1002/crossmark_policy",
  "source": "Crossref",
  "is-referenced-by-count": 436,
  "title": "Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics",
  "prefix": "10.1002",
  "volume": "30",
  "author": [
    {
      "given": "Jiadi",
      "family": "Zhu",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University  Beijing 100871 China"
        }
      ]
    },
    {
      "ORCID": "https://orcid.org/0000-0003-4674-4059",
      "authenticated-orcid": false,
      "given": "Yuchao",
      "family": "Yang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University  Beijing 100871 China"
        }
      ]
    },
    {
      "given": "Rundong",
      "family": "Jia",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University  Beijing 100871 China"
        }
      ]
    },
    {
      "given": "Zhongxin",
      "family": "Liang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University  Beijing 100871 China"
        }
      ]
    },
    {
      "given": "Wen",
      "family": "Zhu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "National Synchrotron Radiation Laboratory CAS Center for Excellence in Nanoscience University of Science and Technology of China  Hefei Anhui 230029 China"
        }
      ]
    },
    {
      "given": "Zia Ur",
      "family": "Rehman",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "National Synchrotron Radiation Laboratory CAS Center for Excellence in Nanoscience University of Science and Technology of China  Hefei Anhui 230029 China"
        }
      ]
    },
    {
      "given": "Lin",
      "family": "Bao",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University  Beijing 100871 China"
        }
      ]
    },
    {
      "given": "Xiaoxian",
      "family": "Zhang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology  Beijing 100190 China"
        }
      ]
    },
    {
      "given": "Yimao",
      "family": "Cai",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University  Beijing 100871 China"
        }
      ]
    },
    {
      "given": "Li",
      "family": "Song",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "National Synchrotron Radiation Laboratory CAS Center for Excellence in Nanoscience University of Science and Technology of China  Hefei Anhui 230029 China"
        }
      ]
    },
    {
      "given": "Ru",
      "family": "Huang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University  Beijing 100871 China"
        }
      ]
    }
  ],
  "member": "311",
  "published-online": {
    "date-parts": [
      [
        2018,
        4,
        17
      ]
    ]
  },
  "reference": [
    {
      "key": "e_1_2_5_1_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/5.58356"
    },
    {
      "key": "e_1_2_5_2_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/JPROC.2015.2444094"
    },
    {
      "key": "e_1_2_5_3_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1088/0957-4484/24/38/382001"
    },
    {
      "key": "e_1_2_5_4_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.1254642"
    },
    {
      "key": "e_1_2_5_5_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl201040y"
    },
    {
      "key": "e_1_2_5_6_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2016.70"
    },
    {
      "key": "e_1_2_5_7_1",
      "first-page": "697",
      "author": "Burr G. W.",
      "year": "2014",
      "journal-title": "IEEE Int. Electron Devices Meet."
    },
    {
      "key": "e_1_2_5_8_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nature23011"
    },
    {
      "key": "e_1_2_5_9_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat3510"
    },
    {
      "key": "e_1_2_5_10_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.4991917"
    },
    {
      "key": "e_1_2_5_11_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat3054"
    },
    {
      "key": "e_1_2_5_12_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nature14441"
    },
    {
      "key": "e_1_2_5_13_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat4756"
    },
    {
      "key": "e_1_2_5_14_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms1737"
    },
    {
      "key": "e_1_2_5_15_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms5232"
    },
    {
      "key": "e_1_2_5_16_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200900375"
    },
    {
      "key": "e_1_2_5_17_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms15173"
    },
    {
      "key": "e_1_2_5_18_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2015.221"
    },
    {
      "key": "e_1_2_5_19_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat3307"
    },
    {
      "key": "e_1_2_5_20_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2017.83"
    },
    {
      "key": "e_1_2_5_21_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms15199"
    },
    {
      "key": "e_1_2_5_22_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/s41928-017-0002-z"
    },
    {
      "volume-title": "Principles of Neural Science",
      "year": "2000",
      "author": "Kandel E. R.",
      "key": "e_1_2_5_23_1"
    },
    {
      "key": "e_1_2_5_24_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1146/annurev.physiol.64.092501.114547"
    },
    {
      "key": "e_1_2_5_25_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/acs.nanolett.5b00697"
    },
    {
      "key": "e_1_2_5_26_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201503202"
    },
    {
      "key": "e_1_2_5_27_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms4158"
    },
    {
      "key": "e_1_2_5_28_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat4856"
    },
    {
      "key": "e_1_2_5_29_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2015.56"
    },
    {
      "key": "e_1_2_5_30_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201604310"
    },
    {
      "key": "e_1_2_5_31_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/sciadv.1501326"
    },
    {
      "key": "e_1_2_5_32_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adfm.201100180"
    },
    {
      "key": "e_1_2_5_33_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1655829"
    },
    {
      "key": "e_1_2_5_34_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2012.193"
    },
    {
      "key": "e_1_2_5_35_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2014.323"
    },
    {
      "key": "e_1_2_5_36_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0378-7753(94)02177-5"
    },
    {
      "key": "e_1_2_5_37_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0167-2738(83)90054-1"
    },
    {
      "key": "e_1_2_5_38_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.cell.2007.11.028"
    },
    {
      "key": "e_1_2_5_39_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nrn2093"
    },
    {
      "key": "e_1_2_5_40_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.conb.2010.06.010"
    },
    {
      "key": "e_1_2_5_41_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1113/jphysiol.1973.sp010348"
    },
    {
      "key": "e_1_2_5_42_1",
      "doi-asserted-by": "crossref",
      "first-page": "137",
      "DOI": "10.1146/annurev.ms.16.080186.001033",
      "volume": "16",
      "author": "Rouxel J.",
      "year": "1986",
      "journal-title": "Annu. Rev. Mater. Sci."
    },
    {
      "key": "e_1_2_5_43_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/acs.nanolett.6b02136"
    },
    {
      "key": "e_1_2_5_44_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.4961712"
    },
    {
      "key": "e_1_2_5_45_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nature03010"
    },
    {
      "key": "e_1_2_5_46_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/TED.2015.2439635"
    },
    {
      "key": "e_1_2_5_47_1",
      "first-page": "625",
      "author": "Park S.",
      "year": "2013",
      "journal-title": "IEEE Int. Electron Devices Meet."
    },
    {
      "key": "e_1_2_5_48_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevX.4.031005"
    },
    {
      "key": "e_1_2_5_49_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1989431"
    },
    {
      "key": "e_1_2_5_50_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200901710"
    }
  ],
  "container-title": "Advanced Materials",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadma.201800195",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201800195",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        9,
        16
      ]
    ],
    "date-time": "2023-09-16T01:48:47Z",
    "timestamp": 1694828927000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://onlinelibrary.wiley.com/doi/10.1002/adma.201800195"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2018,
        4,
        17
      ]
    ]
  },
  "references-count": 50,
  "journal-issue": {
    "issue": "21",
    "published-print": {
      "date-parts": [
        [
          2018,
          5
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1002/adma.201800195"
  ],
  "URL": "http://dx.doi.org/10.1002/adma.201800195",
  "relation": {},
  "ISSN": [
    "0935-9648",
    "1521-4095"
  ],
  "subject": [],
  "container-title-short": "Advanced Materials",
  "published": {
    "date-parts": [
      [
        2018,
        4,
        17
      ]
    ]
  },
  "assertion": [
    {
      "value": "2018-01-09",
      "order": 0,
      "name": "received",
      "label": "Received",
      "group": {
        "name": "publication_history",
        "label": "Publication History"
      }
    },
    {
      "value": "2018-04-17",
      "order": 2,
      "name": "published",
      "label": "Published",
      "group": {
        "name": "publication_history",
        "label": "Publication History"
      }
    }
  ],
  "article-number": "1800195"
}