DOI: 10.1002/adma.201704382. Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe<sub>2</sub>

Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2

10.1002/adma.201704382

Crossref journal-article

Wiley

Advanced Materials (311)

Abstract

AbstractLayered transition metal (Ti, Ta, Nb, etc.) dichalcogenides are important prototypes for the study of the collective charge density wave (CDW). Reducing the system dimensionality is expected to lead to novel properties, as exemplified by the discovery of enhanced CDW order in ultrathin TiSe2. However, the syntheses of monolayer and large‐area 2D CDW conductors can currently only be achieved by molecular beam epitaxy under ultrahigh vacuum. This study reports the growth of monolayer crystals and up to 5 × 105 µm2 large films of the typical 2D CDW conductor—TiSe2—by ambient‐pressure chemical vapor deposition. Atomic resolution scanning transmission electron microscopy indicates the as‐grown samples are highly crystalline 1T‐phase TiSe2. Variable‐temperature Raman spectroscopy shows a CDW phase transition temperature of 212.5 K in few layer TiSe2, indicative of high crystal quality. This work not only allows the exploration of many‐body state of TiSe2 in 2D limit but also offers the possibility of utilizing large‐area TiSe2 in ultrathin electronic devices.

Bibliography

Wang, H., Chen, Y., Duchamp, M., Zeng, Q., Wang, X., Tsang, S. H., Li, H., Jing, L., Yu, T., Teo, E. H. T., & Liu, Z. (2018). LargeâArea Atomic Layers of the ChargeâDensityâWave Conductor TiSe2. Advanced Materials, 30(8). Portico.

Authors 11

Hong Wang (first)
Yu Chen (additional)
Martial Duchamp (additional)
Qingsheng Zeng (additional)
Xuewen Wang (additional)
Siu Hon Tsang (additional)
Hongling Li (additional)
Lin Jing (additional)
Ting Yu (additional)
Edwin Hang Tong Teo (additional)
Zheng Liu (additional)

References 40 Referenced 73

10.1039/C4CS00102H
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Dates

Type	When
Created	7 years, 7 months ago (Jan. 10, 2018, 11:04 a.m.)
Deposited	1 year, 11 months ago (Sept. 15, 2023, 11:05 p.m.)
Indexed	5 days, 20 hours ago (Aug. 23, 2025, 9:46 p.m.)
Issued	7 years, 7 months ago (Jan. 10, 2018)
Published	7 years, 7 months ago (Jan. 10, 2018)
Published Online	7 years, 7 months ago (Jan. 10, 2018)
Published Print	7 years, 6 months ago (Feb. 1, 2018)

Funders 2

National Research Foundation Singapore 10.13039/501100001381
Region: Asia
gov (National government)
Labels8
1. National Research Foundation-Prime Minister's office, Republic of Singapore
2. Singapore National Research Foundation
3. National Research Foundation of Singapore
4. National Research Foundation, Singapore
5. National Research Foundation, Singapore (NRF)
6. nrfsg
7. NRF Singapore
8. NRF
Awards1
1. NRF‐RF2013‐08
Nanyang Technological University 10.13039/501100001475
Region: Asia
gov (Universities (academic only))
Labels15
1. 南洋理工大学
2. நன்யாங் தொழில்நுட்ப பல்கலைக்கழகம்
3. Universiti Teknologi Nanyang
4. Nanyang Technological University in Singapore
5. NTUsg
6. Nanyang Technological University-Singapore
7. Nanyang Technological University Singapore
8. Nanyang Technological University (Singapore)
9. Nanyang Technological University - NTU Singapore
10. Nanyang Technological University (NTU)
11. Nanyang Technological University, Singapore (NTU Singapore)
12. Nanyang Technological University, Singapore (NTU)
13. Nanyang Technological University, Singapore
14. NTU Singapore
15. NTU
Awards2
1. M4081924.070
2. M4081137.070

BibTeX

@article{Wang_2018, title={Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2}, volume={30}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.201704382}, DOI={10.1002/adma.201704382}, number={8}, journal={Advanced Materials}, publisher={Wiley}, author={Wang, Hong and Chen, Yu and Duchamp, Martial and Zeng, Qingsheng and Wang, Xuewen and Tsang, Siu Hon and Li, Hongling and Jing, Lin and Yu, Ting and Teo, Edwin Hang Tong and Liu, Zheng}, year={2018}, month=jan }

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