DOI: 10.1002/adma.201703811. Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

10.1002/adma.201703811

Crossref journal-article

Wiley

Advanced Materials (311)

Abstract

AbstractBlack phosphorus (BP), a burgeoning elemental 2D semiconductor, has aroused increasing scientific and technological interest, especially as a channel material in field‐effect transistors (FETs). However, the intrinsic instability of BP causes practical concern and the transistor performance must also be improved. Here, the use of metal‐ion modification to enhance both the stability and transistor performance of BP sheets is described. Ag+ spontaneously adsorbed on the BP surface via cation–π interactions passivates the lone‐pair electrons of P thereby rendering BP more stable in air. Consequently, the Ag+‐modified BP FET shows greatly enhanced hole mobility from 796 to 1666 cm2 V−1 s−1 and ON/OFF ratio from 5.9 × 104 to 2.6 × 106. The mechanisms pertaining to the enhanced stability and transistor performance are discussed and the strategy can be extended to other metal ions such as Fe3+, Mg2+, and Hg2+. Such stable and high‐performance BP transistors are crucial to electronic and optoelectronic devices. The stability and semiconducting properties of BP sheets can be enhanced tremendously by this novel strategy.

Bibliography

Guo, Z., Chen, S., Wang, Z., Yang, Z., Liu, F., Xu, Y., Wang, J., Yi, Y., Zhang, H., Liao, L., Chu, P. K., & Yu, X. (2017). MetalâIonâModified Black Phosphorus with Enhanced Stability and Transistor Performance. Advanced Materials, 29(42). Portico.

Authors 12

Zhinan Guo (first)
Si Chen (additional)
Zhongzheng Wang (additional)
Zhenyu Yang (additional)
Fei Liu (additional)
Yanhua Xu (additional)
Jiahong Wang (additional)
Ya Yi (additional)
Han Zhang (additional)
Lei Liao (additional)
Paul K. Chu (additional)
Xue‐Feng Yu (additional)

References 57 Referenced 470

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Dates

Type	When
Created	7 years, 10 months ago (Sept. 28, 2017, 12:26 p.m.)
Deposited	1 year, 11 months ago (Sept. 15, 2023, 9:13 p.m.)
Indexed	1 day, 23 hours ago (Aug. 23, 2025, 9:48 p.m.)
Issued	7 years, 10 months ago (Sept. 28, 2017)
Published	7 years, 10 months ago (Sept. 28, 2017)
Published Online	7 years, 10 months ago (Sept. 28, 2017)
Published Print	7 years, 9 months ago (Nov. 1, 2017)

Funders 1

National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
Labels11
1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards3
1. 61605131
2. 51672305
3. 61435010

BibTeX

@article{Guo_2017, title={Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance}, volume={29}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.201703811}, DOI={10.1002/adma.201703811}, number={42}, journal={Advanced Materials}, publisher={Wiley}, author={Guo, Zhinan and Chen, Si and Wang, Zhongzheng and Yang, Zhenyu and Liu, Fei and Xu, Yanhua and Wang, Jiahong and Yi, Ya and Zhang, Han and Liao, Lei and Chu, Paul K. and Yu, Xue‐Feng}, year={2017}, month=sep }

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