DOI: 10.1002/adma.201504789. High‐Mobility Transistors Based on Large‐Area and Highly Crystalline CVD‐Grown MoSe<sub>2</sub> Films on Insulating Substrates

High‐Mobility Transistors Based on Large‐Area and Highly Crystalline CVD‐Grown MoSe2 Films on Insulating Substrates

10.1002/adma.201504789

Crossref journal-article

Wiley

Advanced Materials (311)

Bibliography

Rhyee, J., Kwon, J., Dak, P., Kim, J. H., Kim, S. M., Park, J., Hong, Y. K., Song, W. G., Omkaram, I., Alam, M. A., & Kim, S. (2016). HighâMobility Transistors Based on LargeâArea and Highly Crystalline CVDâGrown MoSe2 Films on Insulating Substrates. Advanced Materials, 28(12), 2316â2321. Portico.

Authors 11

Jong‐Soo Rhyee (first)
Junyeon Kwon (additional)
Piyush Dak (additional)
Jin Hee Kim (additional)
Seung Min Kim (additional)
Jozeph Park (additional)
Young Ki Hong (additional)
Won Geun Song (additional)
Inturu Omkaram (additional)
Muhammad A. Alam (additional)
Sunkook Kim (additional)

References 36 Referenced 120

Dates

Type	When
Created	9 years, 7 months ago (Jan. 11, 2016, 6:38 p.m.)
Deposited	1 year, 10 months ago (Oct. 6, 2023, 10:48 a.m.)
Indexed	1 month, 1 week ago (July 16, 2025, 7:56 a.m.)
Issued	9 years, 7 months ago (Jan. 11, 2016)
Published	9 years, 7 months ago (Jan. 11, 2016)
Published Online	9 years, 7 months ago (Jan. 11, 2016)
Published Print	9 years, 5 months ago (March 1, 2016)

Funders 0

None

BibTeX

@article{Rhyee_2016, title={High‐Mobility Transistors Based on Large‐Area and Highly Crystalline CVD‐Grown MoSe2 Films on Insulating Substrates}, volume={28}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.201504789}, DOI={10.1002/adma.201504789}, number={12}, journal={Advanced Materials}, publisher={Wiley}, author={Rhyee, Jong‐Soo and Kwon, Junyeon and Dak, Piyush and Kim, Jin Hee and Kim, Seung Min and Park, Jozeph and Hong, Young Ki and Song, Won Geun and Omkaram, Inturu and Alam, Muhammad A. and Kim, Sunkook}, year={2016}, month=jan, pages={2316–2321} }

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