Crossref
journal-article
Wiley
Advanced Materials (311)
References
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{'key': 'e_1_2_5_40_2', 'author': 'Late D. J.', 'year': '2012', 'journal-title': 'ACS Nano'}
/ ACS Nano by Late D. J. (2012)- In addition to adsorption of water on ultrathin layer sheets the hysteresis in transistor devices can also be observed with use of polymer such as PMMA for initial marker on the SiO2substrate followed by deposition of ultra‐thin sheets. It is difficult to remove PMMA completely from the SiO2substrate. Hysteresis arising due to this can be resolve either direct deposition of single‐sheets on clean SiO2substrates by micromechanical exfoliation technique using scotch‐tape or use of shadow mask directly for making initial marker followed by mechanical exfoliation.
10.1002/crat.201100055
Dates
Type | When |
---|---|
Created | 13 years, 2 months ago (June 8, 2012, 3:45 a.m.) |
Deposited | 1 year, 10 months ago (Oct. 10, 2023, 10:19 a.m.) |
Indexed | 1 day, 6 hours ago (Aug. 20, 2025, 8:35 a.m.) |
Issued | 13 years, 2 months ago (June 8, 2012) |
Published | 13 years, 2 months ago (June 8, 2012) |
Published Online | 13 years, 2 months ago (June 8, 2012) |
Published Print | 13 years, 1 month ago (July 10, 2012) |
@article{Late_2012, title={GaS and GaSe Ultrathin Layer Transistors}, volume={24}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.201201361}, DOI={10.1002/adma.201201361}, number={26}, journal={Advanced Materials}, publisher={Wiley}, author={Late, Dattatray J. and Liu, Bin and Luo, Jiajun and Yan, Aiming and Matte, H. S. S. Ramakrishna and Grayson, Matthew and Rao, C. N. R. and Dravid, Vinayak P.}, year={2012}, month=jun, pages={3549–3554} }