Crossref journal-article
Wiley
Advanced Materials (311)
Bibliography

Late, D. J., Liu, B., Luo, J., Yan, A., Matte, H. S. S. R., Grayson, M., Rao, C. N. R., & Dravid, V. P. (2012). GaS and GaSe Ultrathin Layer Transistors. Advanced Materials, 24(26), 3549–3554. Portico.

Authors 8
  1. Dattatray J. Late (first)
  2. Bin Liu (additional)
  3. Jiajun Luo (additional)
  4. Aiming Yan (additional)
  5. H. S. S. Ramakrishna Matte (additional)
  6. Matthew Grayson (additional)
  7. C. N. R. Rao (additional)
  8. Vinayak P. Dravid (additional)
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  41. In addition to adsorption of water on ultrathin layer sheets the hysteresis in transistor devices can also be observed with use of polymer such as PMMA for initial marker on the SiO2substrate followed by deposition of ultra‐thin sheets. It is difficult to remove PMMA completely from the SiO2substrate. Hysteresis arising due to this can be resolve either direct deposition of single‐sheets on clean SiO2substrates by micromechanical exfoliation technique using scotch‐tape or use of shadow mask directly for making initial marker followed by mechanical exfoliation.
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Dates
Type When
Created 13 years, 2 months ago (June 8, 2012, 3:45 a.m.)
Deposited 1 year, 10 months ago (Oct. 10, 2023, 10:19 a.m.)
Indexed 1 day, 6 hours ago (Aug. 20, 2025, 8:35 a.m.)
Issued 13 years, 2 months ago (June 8, 2012)
Published 13 years, 2 months ago (June 8, 2012)
Published Online 13 years, 2 months ago (June 8, 2012)
Published Print 13 years, 1 month ago (July 10, 2012)
Funders 0

None

@article{Late_2012, title={GaS and GaSe Ultrathin Layer Transistors}, volume={24}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.201201361}, DOI={10.1002/adma.201201361}, number={26}, journal={Advanced Materials}, publisher={Wiley}, author={Late, Dattatray J. and Liu, Bin and Luo, Jiajun and Yan, Aiming and Matte, H. S. S. Ramakrishna and Grayson, Matthew and Rao, C. N. R. and Dravid, Vinayak P.}, year={2012}, month=jun, pages={3549–3554} }