DOI: 10.1002/adma.200903719. p‐Type Semiconducting GeSe Combs by a Vaporization–Condensation

p‐Type Semiconducting GeSe Combs by a Vaporization–Condensation–Recrystallization (VCR) Process

10.1002/adma.200903719

Crossref journal-article

Wiley

Advanced Materials (311)

Bibliography

Yoon, S. M., Song, H. J., & Choi, H. C. (2010). pâType Semiconducting GeSe Combs by a VaporizationâCondensationâRecrystallization (VCR) Process. Advanced Materials, 22(19), 2164â2167. Portico.

Authors 3

Seok Min Yoon (first)
Hyun Jae Song (additional)
Hee Cheul Choi (additional)

References 25 Referenced 101

10.1063/1.126750
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Dates

Type	When
Created	15 years, 5 months ago (March 5, 2010, 2:42 p.m.)
Deposited	1 year, 10 months ago (Oct. 10, 2023, 11:30 p.m.)
Indexed	2 months, 4 weeks ago (June 3, 2025, 4:28 a.m.)
Issued	15 years, 3 months ago (May 12, 2010)
Published	15 years, 3 months ago (May 12, 2010)
Published Online	15 years, 3 months ago (May 12, 2010)
Published Print	15 years, 3 months ago (May 18, 2010)

Funders 0

None

BibTeX

@article{Yoon_2010, title={p‐Type Semiconducting GeSe Combs by a Vaporization–Condensation–Recrystallization (VCR) Process}, volume={22}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.200903719}, DOI={10.1002/adma.200903719}, number={19}, journal={Advanced Materials}, publisher={Wiley}, author={Yoon, Seok Min and Song, Hyun Jae and Choi, Hee Cheul}, year={2010}, month=may, pages={2164–2167} }

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