DOI: 10.1002/adma.200803582. Carbon‐Based Field‐Effect Transistors for Nanoelectronics

Carbon‐Based Field‐Effect Transistors for Nanoelectronics

10.1002/adma.200803582

Crossref journal-article

Wiley

Advanced Materials (311)

Abstract

AbstractIn this review, the suitability of the major types of carbon nanostructures as conducting channels of field‐effect transistors (FETs) is compared on the basis of the dimensionality and size of their π‐conjugated system. For each of these materials, recent progress in its synthesis, electrical and structural characterization, as well as its implementation into various gate configurations is surveyed, with emphasis laid onto nanoscale aspects of the FET design and the attainable device performance. Finally, promising future research directions, such as the integration of different carbon nanostructures into novel device architectures, are outlined.

Bibliography

Burghard, M., Klauk, H., & Kern, K. (2009). CarbonâBased FieldâEffect Transistors for Nanoelectronics. Advanced Materials, 21(25â26), 2586â2600. Portico.

Authors 3

Marko Burghard (first)
Hagen Klauk (additional)
Klaus Kern (additional)

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Dates

Type	When
Created	16 years, 3 months ago (May 4, 2009, 9:11 a.m.)
Deposited	2 years ago (Aug. 20, 2023, 9:13 p.m.)
Indexed	1 week, 3 days ago (Aug. 23, 2025, 1:04 a.m.)
Issued	16 years, 1 month ago (July 6, 2009)
Published	16 years, 1 month ago (July 6, 2009)
Published Online	16 years, 1 month ago (July 6, 2009)
Published Print	16 years, 1 month ago (July 13, 2009)

Funders 2

Deutsche Forschungsgemeinschaft 10.13039/501100001659
Region: Europe
gov (National government)
Labels3
1. German Research Association
2. German Research Foundation
3. DFG
Landesstiftung Baden-Wuerttemberg 10.13039/100008316 Baden-Württemberg Stiftung
Region: Europe
pri (Trusts, charities, foundations (both public and private))
Labels6
1. Baden-Württemberg Foundation
2. Landesstiftung Baden-Württemberg
3. Baden-Württemberg Foundation gGmbH
4. Baden-Württemberg Stiftung gGmbH
5. BW Stiftung
6. BWS

BibTeX

@article{Burghard_2009, title={Carbon‐Based Field‐Effect Transistors for Nanoelectronics}, volume={21}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.200803582}, DOI={10.1002/adma.200803582}, number={25–26}, journal={Advanced Materials}, publisher={Wiley}, author={Burghard, Marko and Klauk, Hagen and Kern, Klaus}, year={2009}, month=jul, pages={2586–2600} }

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