Crossref journal-article
Wiley
Advanced Materials (311)
Abstract

AbstractWith the advent of devices based on single crystals, the performance of organic field‐effect transistors has experienced a significant leap, with mobility now in excess of 10 cm2 V−1 s−1. The purpose of this review is to give an overview of the state‐of‐the‐art of these high‐performance organic transistors. The paper focuses on the problem of parameter extraction, limitations of the performance by the interfaces, which include the dielectric–semiconductor interface, and the injection and retrieval of charge carriers at the source and drain electrodes. High‐performance devices also constitute tools of choice for investigating charge transport phenomena in organic materials. It is shown how the combination of field‐effect measurements with other electrical characterizations helps in elucidating this still unresolved issue.

Bibliography

Braga, D., & Horowitz, G. (2009). High‐Performance Organic Field‐Effect Transistors. Advanced Materials, 21(14–15), 1473–1486. Portico.

Authors 2
  1. Daniele Braga (first)
  2. Gilles Horowitz (additional)
References 116 Referenced 658
  1. 10.1063/1.96937
  2. 10.1063/1.98799
  3. 10.1063/1.97417
  4. 10.1063/1.1579554
  5. 10.1109/TCAPT.2005.859672
  6. 10.1143/JJAP.43.3605
  7. 10.1109/TED.2005.850954
  8. 10.1109/2944.669475
  9. 10.1557/mrs2006.118
  10. 10.1889/1.2835023
  11. 10.1103/RevModPhys.78.973
  12. 10.1002/3527608753.ch2
  13. 10.1063/1.2215132
  14. 10.1063/1.1797540
  15. 10.1063/1.2185632
  16. 10.1002/1521-4095(20021203)14:23<1717::AID-ADMA1717>3.0.CO;2-G
  17. 10.1016/j.synthmet.2005.07.140
  18. 10.1002/adma.200304841
  19. 10.1002/adfm.200600170
  20. 10.1063/1.1631079
  21. 10.1103/PhysRevB.77.115205
  22. 10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W
  23. 10.1063/1.1810205
  24. 10.1063/1.1470702
  25. {'key': 'e_1_2_1_25_2', 'volume-title': 'Physics of Semiconductor Devices', 'author': 'Sze S. M.', 'year': '1981'} / Physics of Semiconductor Devices by Sze S. M. (1981)
  26. 10.1016/S0026-2714(02)00027-6
  27. 10.1103/PhysRevB.57.12964
  28. 10.1103/PhysRevLett.25.509
  29. 10.1109/LED.2005.854394
  30. D.Braga G.Horowitz Appl. Phys. A2009 in press.
  31. 10.1063/1.1710729
  32. 10.1063/1.1645316
  33. 10.1021/cr0501386
  34. 10.1021/cr050143
  35. 10.1039/b614393h
  36. 10.1021/ja8005918
  37. 10.1002/pssa.200404336
  38. 10.1063/1.1767292
  39. 10.1103/PhysRevLett.93.086602
  40. 10.1063/1.2711393
  41. 10.1063/1.121205
  42. 10.1002/adma.200304654
  43. 10.1016/S0379-6779(02)00398-3
  44. 10.1063/1.2170421
  45. 10.1038/nature05427
  46. 10.1002/adma.200600634
  47. 10.1002/adma.200701139
  48. 10.1002/adma.200401866
  49. 10.1103/PhysRevLett.95.226601
  50. 10.1103/PhysRevLett.98.196804
  51. 10.1038/nmat2120
  52. 10.1063/1.2709894
  53. 10.1002/adma.200401017
  54. 10.1063/1.373091
  55. 10.1063/1.1631736
  56. 10.1016/j.orgel.2006.07.011
  57. 10.1103/PhysRevB.78.035334
  58. 10.1103/PhysRevB.75.245115
  59. 10.1557/JMR.2004.0267
  60. 10.1063/1.2717552
  61. 10.1063/1.1954901
  62. 10.1021/cm049598q
  63. 10.1002/adma.200500517
  64. 10.1038/nature02987
  65. 10.1038/nature05533
  66. 10.1002/adma.200700831
  67. 10.1088/1367-2630/7/1/133
  68. 10.1103/PhysRevLett.92.116802
  69. 10.1063/1.1491009
  70. 10.1002/adma.200501152
  71. 10.1002/3527606637
  72. 10.1016/j.sse.2007.06.023
  73. 10.1063/1.2937729
  74. 10.1002/adfm.200390030
  75. 10.1002/pssb.2221750102
  76. 10.1063/1.1812368
  77. 10.1038/nmat1774
  78. 10.1126/science.1094196
  79. 10.1103/PhysRevB.68.235312
  80. 10.1002/adma.200600929
  81. 10.1109/16.605476
  82. 10.1016/S1369-7021(07)70019-6
  83. 10.1063/1.1578536
  84. 10.1063/1.1815042
  85. 10.1016/j.orgel.2007.09.005
  86. 10.1063/1.2912345
  87. 10.1021/ja052478e
  88. 10.1002/adfm.200400486
  89. 10.1063/1.1511826
  90. 10.1063/1.2711393
  91. 10.1063/1.2402349
  92. 10.1002/pssb.200743439
  93. 10.1002/adma.200700913
  94. 10.1063/1.2737419
  95. 10.1002/adma.200702688
  96. 10.1038/nature03376
  97. 10.1063/1.2748869
  98. 10.1063/1.2166698
  99. 10.1002/pssa.200723421
  100. 10.1002/cphc.200300942
  101. 10.1201/9781420008012
  102. 10.1063/1.1415374
  103. 10.1063/1.2804288
  104. 10.1063/1.1806533
  105. 10.1063/1.1618919
  106. {'key': 'e_1_2_1_106_2', 'first-page': '111', 'volume': '47', 'author': 'Lee M. W.', 'year': '2005', 'journal-title': 'J. Korean Phys. Soc.'} / J. Korean Phys. Soc. by Lee M. W. (2005)
  107. 10.1063/1.2197033
  108. 10.1016/j.orgel.2007.10.012
  109. 10.1063/1.2400507
  110. 10.1016/j.orgel.2008.01.004
  111. 10.1063/1.2357009
  112. 10.1063/1.2737418
  113. 10.1063/1.2759987
  114. 10.1063/1.2738382
  115. 10.1063/1.2741411
  116. 10.1063/1.2813640
Dates
Type When
Created 16 years, 6 months ago (Feb. 19, 2009, 8:36 a.m.)
Deposited 2 years ago (Aug. 31, 2023, 2:50 a.m.)
Indexed 2 days, 8 hours ago (Aug. 29, 2025, 6:06 a.m.)
Issued 16 years, 4 months ago (April 14, 2009)
Published 16 years, 4 months ago (April 14, 2009)
Published Online 16 years, 4 months ago (April 14, 2009)
Published Print 16 years, 4 months ago (April 20, 2009)
Funders 0

None

@article{Braga_2009, title={High‐Performance Organic Field‐Effect Transistors}, volume={21}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.200802733}, DOI={10.1002/adma.200802733}, number={14–15}, journal={Advanced Materials}, publisher={Wiley}, author={Braga, Daniele and Horowitz, Gilles}, year={2009}, month=apr, pages={1473–1486} }