DOI: 10.1002/adma.200802532. Nanowire‐Templated Lateral Epitaxial Growth of Low‐Dislocation Density Nonpolar <i>a</i>‐Plane GaN on <i>r</i>‐Plane Sapphire

Nanowire‐Templated Lateral Epitaxial Growth of Low‐Dislocation Density Nonpolar a‐Plane GaN on r‐Plane Sapphire

10.1002/adma.200802532

Crossref journal-article

Wiley

Advanced Materials (311)

Bibliography

Li, Q., Lin, Y., Creighton, J. R., Figiel, J. J., & Wang, G. T. (2009). NanowireâTemplated Lateral Epitaxial Growth of LowâDislocation Density Nonpolar aâPlane GaN on râPlane Sapphire. Advanced Materials, 21(23), 2416â2420. Portico.

Authors 5

Qiming Li (first)
Yong Lin (additional)
J. Randall Creighton (additional)
Jeffrey J. Figiel (additional)
George T. Wang (additional)

References 31 Referenced 45

Dates

Type	When
Created	16 years, 4 months ago (April 20, 2009, 3:43 p.m.)
Deposited	1 year, 11 months ago (Sept. 28, 2023, 1:13 p.m.)
Indexed	3 months, 4 weeks ago (May 6, 2025, 7:05 a.m.)
Issued	16 years, 2 months ago (June 10, 2009)
Published	16 years, 2 months ago (June 10, 2009)
Published Online	16 years, 2 months ago (June 10, 2009)
Published Print	16 years, 2 months ago (June 19, 2009)

Funders 0

None

BibTeX

@article{Li_2009, title={Nanowire‐Templated Lateral Epitaxial Growth of Low‐Dislocation Density Nonpolar a‐Plane GaN on r‐Plane Sapphire}, volume={21}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.200802532}, DOI={10.1002/adma.200802532}, number={23}, journal={Advanced Materials}, publisher={Wiley}, author={Li, Qiming and Lin, Yong and Creighton, J. Randall and Figiel, Jeffrey J. and Wang, George T.}, year={2009}, month=jun, pages={2416–2420} }

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