DOI: 10.1002/adma.200401959. Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication

Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication

10.1002/adma.200401959

Crossref journal-article

Wiley

Advanced Materials (311)

Bibliography

He, R., Gao, D., Fan, R., Hochbaum, A. I., Carraro, C., Maboudian, R., & Yang, P. (2005). Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication. Advanced Materials, 17(17), 2098â2102. Portico.

Authors 7

R. He (first)
D. Gao (additional)
R. Fan (additional)
A. I. Hochbaum (additional)
C. Carraro (additional)
R. Maboudian (additional)
P. Yang (additional)

References 40 Referenced 131

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The Si nanowires grown here slightly taper along their growth directions. This can be used to determine whether the growth is forward or backward along the specific <111> direction for a bridging nanowire.
10.1063/1.108329

Dates

Type	When
Created	20 years, 4 months ago (April 20, 2005, 4:46 a.m.)
Deposited	1 year, 9 months ago (Nov. 20, 2023, 9:09 p.m.)
Indexed	11 months, 3 weeks ago (Aug. 30, 2024, 7:41 a.m.)
Issued	20 years, 4 months ago (April 20, 2005)
Published	20 years, 4 months ago (April 20, 2005)
Published Online	20 years, 4 months ago (April 20, 2005)
Published Print	19 years, 11 months ago (Sept. 5, 2005)

Funders 0

None

BibTeX

@article{He_2005, title={Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication}, volume={17}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.200401959}, DOI={10.1002/adma.200401959}, number={17}, journal={Advanced Materials}, publisher={Wiley}, author={He, R. and Gao, D. and Fan, R. and Hochbaum, A. I. and Carraro, C. and Maboudian, R. and Yang, P.}, year={2005}, month=apr, pages={2098–2102} }

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