Crossref journal-article
Wiley
Advanced Materials (311)
Abstract

A new approach to the ‘3D solar‐cell concept’ is reported. Atomic layer chemical vapor deposition is employed to infiltrate CuInS2 into the pores of nanostructured TiO2. In this way it is possible to obtain a nanometer‐scale interpenetrating network between n‐type TiO2 and p‐type CuInS2. Cells created this way show photovoltaic activity with a maximum monochromatic incident photon‐to‐ current conversion efficiency of 80 %.

Bibliography

Nanu, M., Schoonman, J., & Goossens, A. (2004). Inorganic Nanocomposites of n‐ and p‐Type Semiconductors: A New Type of Three‐Dimensional Solar Cell. Advanced Materials, 16(5), 453–456. Portico.

Dates
Type When
Created 21 years, 5 months ago (March 9, 2004, 11 a.m.)
Deposited 1 year, 9 months ago (Nov. 20, 2023, 2:24 p.m.)
Indexed 4 months, 1 week ago (April 25, 2025, 3:06 a.m.)
Issued 21 years, 5 months ago (March 5, 2004)
Published 21 years, 5 months ago (March 5, 2004)
Published Online 21 years, 5 months ago (March 8, 2004)
Published Print 21 years, 5 months ago (March 5, 2004)
Funders 0

None

@article{Nanu_2004, title={Inorganic Nanocomposites of n‐ and p‐Type Semiconductors: A New Type of Three‐Dimensional Solar Cell}, volume={16}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.200306194}, DOI={10.1002/adma.200306194}, number={5}, journal={Advanced Materials}, publisher={Wiley}, author={Nanu, M. and Schoonman, J. and Goossens, A.}, year={2004}, month=mar, pages={453–456} }