DOI: 10.1002/adma.200305623. Solution‐Processed Organic n‐Type Thin‐Film Transistors

Solution‐Processed Organic n‐Type Thin‐Film Transistors

10.1002/adma.200305623

Crossref journal-article

Wiley

Advanced Materials (311)

Abstract

An organic n‐type transistor, where both insulating and active layer were processed from solution, has been produced. As the active layer the C60‐derivative, [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM), was used. Its electron mobility was determined to be as high as μe = 4.5 × 10–3 cm2 V–1 s–1 when calcium drain/source contacts were used. If these contacts are formed from more air‐stable metals, the device performance decreases.

Bibliography

Waldauf, C., Schilinsky, P., Perisutti, M., Hauch, J., & Brabec, C. J. (2003). SolutionâProcessed Organic nâType ThinâFilm Transistors. Advanced Materials, 15(24), 2084â2088. Portico.

Authors 5

C. Waldauf (first)
P. Schilinsky (additional)
M. Perisutti (additional)
J. Hauch (additional)
C.J. Brabec (additional)

References 14 Referenced 178

10.1063/1.1290728
10.1063/1.1501450
A. Knobloch A. Bernds W. Clemens Proc. of the 1st Int. IEEE Conf. on Polymers and Adhesives in Microelectronics and Photonics Polytronic IEEE Piscataway NJ2001 p. 84.
10.1557/PROC-736-D6.3
A. Manuelli A. Knobloch A. Bernds W. Clemens Proc. of the 2nd Int. IEEE Conf. on Polymers and Adhesives in Microelectronics and Photonics Polytronic IEEE Piscataway NJ2002 201.
10.1557/PROC-665-C7.5
10.1016/S0379-6779(98)00365-8
10.1002/adfm.200390004
{'key': 'e_1_2_1_10_2', 'first-page': 'in press', 'author': 'Pacios R.', 'year': '2003', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. by Pacios R. (2003)
10.1016/S0927-0248(99)00106-3
10.1002/1616-3028(200110)11:5<374::AID-ADFM374>3.0.CO;2-W
10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO;2-U
10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W
R. Hespers Ph.D. Thesis Rijksuniversiteit Groningen2000.

Dates

Type	When
Created	21 years, 7 months ago (Jan. 5, 2004, 11 a.m.)
Deposited	1 year, 9 months ago (Nov. 20, 2023, 9:36 p.m.)
Indexed	15 hours, 4 minutes ago (Aug. 29, 2025, 5:47 a.m.)
Issued	21 years, 8 months ago (Dec. 11, 2003)
Published	21 years, 8 months ago (Dec. 11, 2003)
Published Online	21 years, 8 months ago (Dec. 11, 2003)
Published Print	21 years, 8 months ago (Dec. 17, 2003)

Funders 0

None

BibTeX

@article{Waldauf_2003, title={Solution‐Processed Organic n‐Type Thin‐Film Transistors}, volume={15}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.200305623}, DOI={10.1002/adma.200305623}, number={24}, journal={Advanced Materials}, publisher={Wiley}, author={Waldauf, C. and Schilinsky, P. and Perisutti, M. and Hauch, J. and Brabec, C.J.}, year={2003}, month=dec, pages={2084–2088} }

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